Method and apparatus for providing a transistor
A method and apparatus wherein the method comprises: providing at least one electrode within a semiconductor layer wherein the semiconductor layer is provided on a first side of a wafer; thinning the wafer to produce a thinned wafer; providing graphene on a second side of the thinned wafer; attaching the semiconductor layer to an electrical interface on the first side of the thinned wafer; and providing at least one electrical connection from the graphene to the electrical interface so as to form a transistor comprising the at least one electrode and the graphene.
1. An apparatus comprising:
a transistor comprising at least one electrode provided within a layer, the layer comprising a semi-conductor portion and a metal stack; wherein the layer is directly below a first side of a substrate;
graphene wherein the graphene is directly above a second side of the substrate enabling the graphene to be used as a channel within the transistor;
an electrical interface on the layer; and
at least one electrical connection from the graphene to the electrical interface.
2. An apparatus as claimed in claim 1 wherein the at least one electrode provides a gate electrode for the transistor.
3. An apparatus as claimed in claim 1 wherein a plurality of electrodes are provided within the semiconductor layer so as to provide a plurality of transistors.
4. An apparatus as claimed in claim 1 wherein the transistor is configured as a sensor.
5. An apparatus as claimed in claim 1 wherein quantum dots are provided adjacent to the graphene.
6. An apparatus as claimed in claim 1 wherein the electrical interface comprises a plurality of contacts on a dielectric layer wherein the plurality of contacts on the dielectric layer extend outside the surface area of the layer.
7. An apparatus as claimed in claim 1 wherein the layer comprises one or more integrated circuit components.
8. An apparatus as claimed in claim 1 further comprising a passivation layer wherein the passivation layer covers at least part of the graphene.
9. An apparatus as claimed in claim 1 further comprising a casing around the transistor.
10. An electronic device comprising:
a transistor comprising at least one electrode provided within a layer, the layer comprising a semi-conductor portion and a metal stack; wherein the layer is directly below a first side of a substrate;
graphene wherein the graphene is directly above a second side of the substrate enabling the graphene to be used as a channel within the transistor;
an electrical interface on the layer; and
at least one electrical connection from the graphene to the electrical interface.