N and P active materials for organic photoelectric conversion layers in organic photodiodes
The field of the DISCLOSURE lies in active materials for organic image sensors. The present disclosure relates to transparent N materials and/or to transparent P materials and their use in absorption layer(s), photoelectric conversion layer(s) and/or an organic image sensor and methods for their synthesis. The present disclosure also relates to photoelectric conversion layer(s) including an active material according to the present disclosure, to a device, including active material(s) according to the present disclosure or photoelectric conversion layer(s) according to the present disclosure. Moreover, the present disclosure relates to an organic image sensor including photoelectric conversion layer(s) according to the present disclosure.
1. A transparent P material for a P:N heterojunction or P:N bilayer or multilayer junction, comprising:
a naphthalene dimide based material of formula III,
wherein R is, at each occurrence, independently selected from the group consisting of —C x H 2x+1 , —C x X 2x+1 , —C x H 2 X 2x−1 ,
R 1 is, at each occurrence, independently selected from the group consisting of
x is an integer from 1 to 10, X is halogen, Y is selected from the group consisting of S, O, Se and N—R 2 , R 2 is, at each occurrence, independently selected from the group consisting of H, a linear or branched alkyl group, a cycloalkyl group, a halogenated alkyl group, a halogen atom, an alkyl or aryl sulfanyl group, an alkyl or aryl amine, an aryl group, a halogenated alkyl group, a heteroaryl group, and a fluorenyl group, and the naphthalene dimide based material dissociates excitons created on colored N or a mixture of colored N materials (N1:N2) or of another colored P or mixture of colored P and N materials (P2:N or P2:N1:N2) via a process of HOMO dissociation in a P:N heterojunction or P:N bilayer or multilayer junction, where transparent refers to an absorption coefficient of less than about 60,000 cm −1 in the visible wavelength range in the region from about 400 to about 700 nm, or to an extinction coefficient of less than about 60,000 M −1 cm −1 in toluene, and colored refers to an absorption coefficient of more than about 60,000 cm −1 in the visible wavelength range in the region from about 400 nm to about 700 nm.
2. The transparent P material of claim 1 , wherein the naphthalene dimide based material has an absorption coefficient of less than about 60,000 cm −1 in the visible wavelength range in the region from about 400 to about 700 nm, or an extinction coefficient of less than about 60,000 M −1 cm −1 in toluene, and is forming homogenous films formed by a deposition method.
3. The transparent P material of claim 1 , wherein R is selected from the group consisting of
—(CF 2 ) 5 CF 3 , —(CH 2 ) 5 CH 3 , —CH 2 —(CF 2 ) 3 —CF 3 ,
4. The transparent P material of claim 1 , wherein R 1 is selected from the group consisting of
5. The transparent P material of claim 1 , wherein R is selected from the group consisting of
—(CF 2 ) 5 CF 3 , —(CH 2 ) 5 CH 3 , —CH 2 —(CF 2 ) 3 —CF 3 ,
and R 1 is selected from the group consisting of
6. The transparent P material of claim 1 , wherein the naphthalene dimide based material has an absorption coefficient of less than about 60,000 curl in the visible wavelength range in the region from about 400 to about 700 nm, or an extinction coefficient of less than about 60,000 M −1 cm −1 in toluene, and is forming a homogenous film formed by a deposition method.
7. A photoelectric conversion layer, comprising:
the transparent P material of claim 1 ; and
a further P material.
8. An organic image sensor, comprising:
an organic photoelectric conversion unit comprising the photoelectric conversion layer of claim 7 ;
at least one electrode; and
a substrate.
9. A hybrid Silicon-organic image sensor or organic image sensor, comprising:
an organic photoelectric conversion unit or units comprising the photoelectric conversion layer of claim 7 ;
metal wiring;
a CMOS substrate; and
at least one insulating layer.
10. An organic image sensor, comprising:
an organic photoelectric conversion unit comprising the photoelectric conversion layer of claim 7 ;
an electrode;
a substrate; and
a second electrode on the photoelectric conversion layer.
11. A hybrid Silicon-organic image sensor or organic image sensor, comprising:
an organic photoelectric conversion unit or units comprising the photoelectric conversion layer of claim 7 ;
a Si based photoelectric conversion unit;
metal wiring;
a CMOS substrate; and
at least one insulating layer.
12. A transparent P material for a P:N heterojunction or P:N bilayer or multilayer junction, comprising:
a naphthalene dimide based material of formula IIIa,
wherein R is, at each occurrence, independently selected from the group consisting of —C x H 2x+1 , —C x X 2x+1 , —C x H 2 X 2x−1 ,
x is an integer from 1 to 10, X is halogen, Y is selected from the group consisting of CH 2 , S, O, Se and N—R 2 , R 2 is, at each occurrence, independently selected from the group consisting of H, a linear or branched alkyl group, a cycloalkyl group, a halogenated alkyl group, a halogen atom, an alkyl or aryl sulfanyl group, an alkyl or aryl amine, an aryl group, a halogenated alkyl group, a heteroaryl group, and a fluorenyl group, and the naphthalene dimide based material dissociates excitons created on colored N or a mixture of colored N materials (N1:N2) or of another colored P or mixture of colored P and N materials (P2:N or P2:N1:N2) via a process of HOMO dissociation in a P:N heterojunction or P:N bilayer or multilayer junction, where transparent refers to an absorption coefficient of less than about 60,000 cm −1 in the visible wavelength range in the region from about 400 to about 700 nm, or to an extinction coefficient of less than about 60,000 M −1 cm −1 in toluene, and colored refers to an absorption coefficient of more than about 60,000 cm −1 in the visible wavelength range in the region from about 400 nm to about 700 nm.
13. The transparent P material of claim 12 , wherein the naphthalene dimide based material has an absorption coefficient of less than about 60,000 cm −1 in the visible wavelength range in the region from about 400 to about 700 nm, or an extinction coefficient of less than about 60,000 M −1 cm −1 in toluene, and is forming homogenous films formed by a deposition method.
14. The transparent P material of claim 12 , wherein R is selected from the group consisting of
—(CF 2 ) 5 CF 3 , —(CH 2 ) 5 CH 3 , —CH 2 —(CF 2 ) 3 —CF 3 ,
15. The transparent P material of claim 12 , wherein the naphthalene dimide based material has an absorption coefficient of less than about 60,000 curl in the visible wavelength range in the region from about 400 to about 700 nm, or an extinction coefficient of less than about 60,000 M −1 cm −1 in toluene, and is forming a homogenous firm formed by a deposition method.
16. A photoelectric conversion layer, comprising:
the transparent P material of claim 12 ; and
a further P material.
17. An organic image sensor, comprising:
an organic photoelectric conversion unit comprising the photoelectric conversion layer of claim 16 ;
at least one electrode; and
a substrate.
18. A hybrid Silicon-organic image sensor or organic image sensor, comprising:
an organic photoelectric conversion unit or units comprising the photoelectric conversion layer of claim 16 ;
metal wiring;
a CMOS substrate; and
at least one insulating layer.
19. An organic image sensor, comprising:
an organic photoelectric conversion unit comprising the photoelectric conversion layer of claim 16 ;
an electrode;
a substrate; and
a second electrode on the photoelectric conversion layer.
20. A hybrid Silicon-organic image sensor or organic image sensor, comprising:
an organic photoelectric conversion unit or units comprising the photoelectric conversion layer of claim 16 ;
a Si based photoelectric conversion unit;
metal wiring;
a CMOS substrate; and
at least one insulating layer.