Silicon-based anode active material and preparation method therefor
The present invention relates to a silicon-based anode active material and a method of fabricating the same. The silicon-based anode active material according to an embodiment of the present invention comprises: particles comprising silicon and oxygen combined with the silicon, wherein a carbon-based conductive layer is coated with on outermost surface of the particles; and phosphorus doped in the particles, wherein a content of the phosphorus with respect to a total weight of the particles and the phosphorus doped in the particles have a range of 0.01 wt % to 15 wt %, and a content of the oxygen has a range of 9.5 wt % to 25 wt %.
1. A silicon based anode active material comprising:
primary particles comprising silicon and oxygen combined with the silicon, wherein the primary particles comprise a core of the silicon and a shell of silicon oxide on the core of the silicon, wherein phosphorous is doped in the primary particles, wherein at least a part of the shell of the silicon oxide comprises phosphorous silicate, and wherein the primary particles have sizes within a range of from about 10 nm to 300 nm; and
secondary particles formed of aggregates of the primary particles, wherein the primary particles are electrically connected by a carbon based conductive layer on the shell of silicon oxide;
wherein a content of the phosphorus with respect to a total weight of the secondary particles and the phosphorus doped in the primary particles has a range from 0.01 wt % to 15 wt %, and a content of the oxygen with respect to a total weight of the secondary particles has a range from 9.5 wt % to 25 wt %.
2. The silicon based anode active material of claim 1 , wherein the content of the phosphorus with respect to the total weight of the particles and the phosphorus doped in the primary particles have a range from 0.01 wt % to 5 wt %.
3. The silicon based anode active material of claim 1 , wherein a content of the carbon-based conductive layer with respect to the total weight of the secondary particles and the phosphorus doped in the primary particles have a range from 4.5 wt % to 32 wt %.
4. The silicon-based anode active material of claim 1 , wherein a thickness of the phosphorous silicate have a range from 3 nm to 15 nm.
5. The silicon based anode active material of claim 1 , wherein the phosphorus is doped in the core of the silicon.
6. The silicon based anode active material of claim 1 , wherein the cores of the silicon with the shells of silicon oxide are obtained by pulverizing a slurry of silicon particles in a liquid solvent containing oxygen to cause chemical oxidation of the silicon particles.