Switching element, semiconductor device, and semiconductor device manufacturing method

1. A switching element comprising: a first variable-resistance element, a second variable-resistance element, a first rectifying element, and a second rectifying element, wherein

each of the first rectifying element and the second rectifying element is a two-terminal element, and

one end portion of the first variable-resistance element and one end portion of the second variable-resistance element are connected to one end portion of the first rectifying element and one end portion of the second rectifying element.

2. The switching element according to claim 1 , wherein

the switching element is to be inserted in a signal path, and

input and output are performed through unconnected terminals of the first variable-resistance element and the second variable-resistance element, and resistance states of the first variable-resistance element and the second variable-resistance element are controlled through unconnected terminals of the first rectifying element and the second rectifying element.

3. The switching element according to claim 1 , wherein

programming of the first variable-resistance element is performed through the second rectifying element, and

programming of the second variable-resistance element is performed through the first rectifying element.

4. The switching element according to claim 1 , wherein

each of the first variable-resistance element and the second variable-resistance element is a nonvolatile-type variable-resistance element including a first electrode, a second electrode, and a variable-resistance film sandwiched between the first electrode and the second electrode,

the first electrode is an active electrode supplying a metal ion,

the variable-resistance film is a layer through which a metal ion conducts, and

the second electrode is an inactive electrode.

5. The switching element according to claim 1 , wherein

the first and second rectifying elements are elements each of which including a third electrode, a fourth electrode, and a rectifying film sandwiched between the third electrode and the fourth electrode, and

the third electrode is of a same material as the fourth electrode.

6. A crossbar switch array wherein at least two or more of the switching elements according to claim 1 are arranged in an array, and

a plurality of the switching elements share at least one wiring connected to an unconnected terminal.

7. A semiconductor device comprising a bipolar-type variable-resistance element in a copper multilayer wiring layer on a semiconductor substrate, the bipolar-type variable-resistance element comprising a first variable-resistance element, a second variable-resistance element, a first rectifying element and a second rectifying element, and the semiconductor device comprising:

a plurality of copper wiring lines formed in the copper multilayer wiring layer, the plurality of copper wiring lines further serving as first electrodes;

an insulating barrier film formed on the plurality of copper wiring lines serving as first electrodes;

an opening formed on the insulating barrier film, the opening connecting to the copper wiring line serving as a first electrode;

a variable-resistance film formed on a plane including the opening;

a second electrode formed on the variable-resistance film; and

the first rectifying element and the second rectifying element formed on the second electrode.

8. The semiconductor device according to claim 7 , further comprising:

a third electrode as a control electrode, the third electrode being formed on the first rectifying element and the second rectifying element.

9. A manufacturing method of a semiconductor device including a bipolar-type variable-resistance element in a copper multilayer wiring layer on a semiconductor substrate, the bipolar-type variable-resistance element comprising a first variable-resistance element, a second variable-resistance element, a first rectifying element and a second rectifying element, and the semiconductor device manufacturing method comprising:

forming an insulating barrier film on a copper wiring, the copper wiring lines further serving as a first electrode;

forming an opening on the insulating barrier film, the opening exposing the copper wiring serving as a first electrode;

forming a variable-resistance film on a surface including the opening;

forming a second electrode on the variable-resistance film;

forming the first and a second rectifying elements above the second electrode, respectively; and

forming a third electrode on the first and the second rectifying elements, respectively.

10. The semiconductor device manufacturing method according to claim 9 , wherein

formation of the variable-resistance film, the second electrode, the first and the second rectifying elements, and the third electrode is performed through:

forming a variable-resistance film, a second electrode, a rectifying element, a third electrode, and a hard mask film in this order on an entire surface including the opening;

by performing patterning treatment on the hard mask film, forming a mask region related to a region including a variable-resistance element part and a rectifying element part; and,

by continuously etching the third electrode, the first and the second rectifying elements, the second electrode, and the variable-resistance film using the mask region as a mask, forming a multi-layered structure of the variable-resistance film, the second electrode, the first and the second rectifying elements, and the third electrode.