Polishing composition
An object of the present invention is to provide a polishing composition which can sufficiently improve a polishing speed of an object to be polished having a silicon-oxygen bond such as a silicon oxide film or a polishing speed of an object to be polished having a silicon-nitrogen bond such as a silicon nitride film. Providing a polishing composition including: (1) an organic compound which has an action site interacting with an object to be polished having a silicon-oxygen bond or a silicon-nitrogen bond and an acceleration site accelerating an access of a component polishing an object to be polished to the object to be polished; (2) abrasive grains; and (3) a dispersing medium.
1. A polishing composition comprising:
(1) an organic compound which has an action site interacting with an object to be polished having a silicon-oxygen bond or a silicon-nitrogen bond and an acceleration site accelerating an access of a component polishing an object to be polished to the object to be polished;
(2) abrasive grains; and
(3) a dispersing medium;
wherein the polishing composition has a pH of above 7.
2. The polishing composition according to claim 1 , wherein the abrasive grains are silica.
3. The polishing composition according to claim 2 , wherein when the object to be polished has a silicon-nitrogen bond, the abrasive grains are sulfonic acid-immobilized silica.
4. The polishing composition according to claim 1 , wherein the action site has a phosphonate group or a salt group thereof.
5. The polishing composition according to claim 1 , wherein the acceleration site has a functional group having hydrophilicity.
6. The polishing composition according to claim 5 , wherein the functional group having hydrophilicity is at least one selected from the group consisting of an amino group, a hydroxyl group, a phosphonate group or a salt group thereof, a carboxyl group or a salt group thereof, a phosphate group or a salt group thereof, a sulfate group or a salt group thereof, a phenyl group, and a group represented by the following Formula (1):
[Chemical Formula 1]
—(O-E) n -H (1)
wherein in Formula (1), E is an alkylene group having 1 to 3 carbon atoms and n is an integer of 1 to 15.
7. The polishing composition according to claim 1 , wherein the interaction is caused by chemical bonding selected from at least one of ion bonding, covalent bonding, and hydrogen bonding.
8. The polishing composition according to claim 2 , wherein a content of the organic compound is more than a minimum concentration, which is defined by the following equation, derived from a content of the silica:
[
Mathematical
Formula
1
]
Minimum
concentration
of
organic
compound
per
1
g
of
silica
=
A
×
M
B
×
N
[
g
]
BET
specific
area
of
silica
per
1
g
:
A
[
m
2
/
g
]
Occupancy
area
of
organic
compound
:
B
[
m
2
/
count
]
Molecular
weight
of
organic
compound
:
M
[
g
/
mol
]
Avogadro
′
s
number
:
N
[
count
/
mol
]
9. The polishing composition according to claim 1 , wherein the organic compound is at least one of aryl phosphonic acid or a salt thereof and phosphonic acid, which contains at least one of a hydroxyl group and a nitrogen atom, or a salt thereof.
10. The polishing composition according to claim 1 , wherein the organic compound has two or more phosphonate groups or salt groups thereof.
11. The polishing composition according to claim 1 , wherein the organic compound is at least one selected from the group consisting of phenylphosphonic acid or a salt thereof, hydroxyethane-diphosphonic acid or a salt thereof, nitrilotrismethylene phosphonic acid or a salt thereof, a trihydrate of alendronic acid or a salt thereof, alendronic acid or a salt thereof, (1-aminoethyl)phosphonic acid or a salt thereof, N,N,N′,N′-ethylenediamine tetrakis(methylene phosphonic acid) or a salt thereof, and glycine N,N-bis(methylene phosphonic acid) or a salt thereof.
12. The polishing composition according to claim 1 , wherein the polishing composition further comprises a surfactant, wherein the surfactant is selected from the group consisting of a cationic surfactant, and amphoteric surfactant, and a nonionic surfactant.