Cationically polymerizable resist underlayer film-forming composition
There is provided a composition for forming a resist underlayer film for lithography that can be used as an underlayer anti-reflective coating that decreases the reflection of irradiated light during exposure from a semiconductor substrate toward the photoresist layer that is formed on the semiconductor substrate and in particular, can be suitably used as a flattening film for flattening a semiconductor substrate having a recess and a project by embedding, in a lithography process for production of a semiconductor device. A resist underlayer film-forming composition for lithography comprising (A) an alicyclic epoxy compound having an alicyclic skeleton and one or more epoxy groups, and a light absorption moiety, in the molecule, (B) a thermal acid generator, and (C) a solvent.
1. A resist underlayer film-forming composition for lithography comprising:
(A) an alicyclic epoxy compound having an alicyclic skeleton and one or more epoxy groups, and a light absorption moiety, in the molecule, the alicyclic epoxy compound (A) including at least one compound that is a reaction product of:
(i) at least one compound having at least one moiety selected from the group consisting of a carboxy group, a phenolic hydroxy group, an acid anhydride structure, an amino group, a thiol group, and a light absorption moiety, and
(ii) at least one of the following compounds having an alicyclic skeleton and three or more epoxy groups:
in which
R 7 is a C 2-8 alkyl chain, which is linear or branched, or contains a cyclic structure,
p and q are each independently an integer of 1 to 30,
the product of p and q is an integer of 3 or more, and
r, s, t, u, v, and w are each independently an integer of 0 to 30 in the same compound;
(B) a thermal acid generator; and
(C) a solvent.
2. The resist underlayer film-forming composition for lithography according to claim 1 , further comprising (D) an alicyclic epoxy compound having an alicyclic skeleton and three or more epoxy groups in the molecule except for a compound corresponding to the alicyclic epoxy compound (A).
3. The resist underlayer film-forming composition for lithography according to claim 2 , wherein the alicyclic epoxy compound (A) has an epoxy number lower than the epoxy number of the alicyclic epoxy compound (D).
4. The resist underlayer film-forming composition for lithography according to claim 1 , wherein the epoxy group is a cycloalkene oxide epoxy group.
5. The resist underlayer film-forming composition for lithography according to claim 4 , wherein the light absorption moiety is a benzyl group, a phenyl group, a naphthyl group, an anthracenyl group, a triazinyl group, a cyanuric group, a thiadiazolyl group, or a thiazolyl group.
6. The resist underlayer film-forming composition for lithography according to claim 1 , wherein the alicyclic epoxy compound (A) further comprises:
a compound having:
a group of the following Formula (X):
and
a benzene ring, a naphthalene ring, an anthracene ring, a triazine ring, a cyanuric acid structure, a thiadiazole ring, or a thiazole ring.
7. The resist underlayer film-forming composition for lithography according to claim 1 , wherein the alicyclic epoxy compound (A) further comprises a compound having the group of the following Formula (X) and a group of the following Formula (Y):
wherein A is a group containing a benzene ring, a naphthalene ring, an anthracene ring, a triazine ring, a cyanuric acid structure, a thiadiazole ring, or a thiazole ring.
8. The resist underlayer film-forming composition for lithography according to claim 1 , further comprising (F) a surfactant.
9. A resist underlayer film-forming composition for lithography comprising:
(A) an alicyclic epoxy compound having an alicyclic skeleton and one or more epoxy groups, and a light absorption moiety, in the molecule;
(B) a thermal acid generator; and
(C) a solvent; wherein
the alicyclic epoxy compound (A) is a compound containing at least one compound of compounds of the following Formulae (1), (2), and (3):
wherein a, b, c, and d are each independently an integer of 0 to 30, X is any group of the following Formulae (4), (5), (6), and (7):
wherein R 1 to R 5 are each independently a hydrogen atom, a C 1-10 alkyl group, a C 3-6 alkenyl group, a benzyl group, a phenyl group, a naphthyl group, an anthracenyl group, a triazinyl group, a cyanuric group, a thiadiazolyl group, or a thiazolyl group, the benzyl group, phenyl group, naphthyl group, anthracenyl group, triazinyl group, cyanuric group, thiadiazolyl group, or thiazolyl group may be substituted with at least one group selected from the group consisting of a C 1-10 alkyl group, a halogen atom, a C 1-10 alkoxy group, a nitro group, a cyano group, and a C 1-10 alkylthio group, and R 3 and R 4 may form a C 3-6 ring together with a nitrogen atom to which they are bonded, provided that Xs in Formula (2) or (3) may be the same or different and X in at least one of Formulae (1) to (3) is a group in which R 1 to R 5 are each a benzyl group, a phenyl group, a naphthyl group, an anthracenyl group, a triazinyl group, a cyanuric group, a thiadiazolyl group, or a thiazolyl group.