ELECTROACOUSTIC COMPONENT WITH IMPROVED ACOUSTICS

1 . An electro-acoustic component (EAB), comprising

a carrier chip (CH) having a piezoelectric material with a piezoelectric axis (PA),

AW transducer structures (EAWS) having electrode fingers (EF) which are arranged on the carrier chip (CH),

wherein

the electrode fingers (EF) are oriented at a right angle with respect to the piezoelectric axis (PA) and

the piezoelectric axis (PA) does not intersect at a right angle with any of the substrate edges (SK).

2 . The electro-acoustic component according to the previous claim, wherein the carrier chip (CH) has a rectangular cross-section.

3 . The electro-acoustic component according to the previous claim, wherein the piezoelectric axis (PA) and a substrate edge (SK) form an angle α 2 which is within an interval [80°, . . . , 87°].

4 . The electro-acoustic component according to any of the previous claims, wherein the piezoelectric material is a monocrystal.

5 . The electro-acoustic component according to any of the previous claims, wherein the piezoelectric material is LiTaO 3 or LiNbO 3 .

6 . The electro-acoustic component according to any of the previous claims, wherein the transducer structures (EAWS) have two busbars (BB) which are oriented at a right angle to the electrode fingers (EF).

7 . The electro-acoustic component according to any of the previous claims, wherein the transducer structures (EAWS) comprise DMS structures.

8 . The electro-acoustic component according to any of the previous claims, wherein the transducer structures (EAWS) comprise ladder-type structures.

9 . HF filter with an electro-acoustic component according to any of the previous claims.

10 . A wafer (W), comprising

a piezoelectric material with a piezoelectric axis (PA),

a first marking (PF) which is provided to indicate the orientation of the wafer (W),

wherein

the marking (PF) comprises an edge section progressing in a straight line, and

the piezoelectric axis (PA) intersects the edge section at an angle α 3 that deviates from a right angle.

11 . The wafer according to the previous claim, wherein the deviation |α 3 −90| is within an interval [3°, . . . , 10°].

12 . A method for producing a plurality of electro-acoustic components (EAB) according to any of claims 1 to 9 , comprising the steps:

Provision of a wafer (W) according to the previous claim;

Formation of the transducer structures (EAWS) of the components (EAB) on the wafer;

Separation of the components (EAB) by separating the wafer (W) into chips (CH) in which the edges (SK) are oriented parallel or at a right angle to the marking (PF) of the wafer (W).

13 . A method for producing a plurality of electro-acoustic components according to any of claims 1 to 9 , comprising the steps:

Provision of a wafer (W);

Formation of the transducer structures (EAWS) of the components (EAB) on the wafer;

Separation of the components (EAB) by separating the wafer (W) in chips (CH).

14 . The method according to the previous claim, wherein the wafer (W) is sawed during separation.

15 . The method according to either of the two previous claims, in which the transducer structures (EAB) are rotated by an angle α 1 within an interval [3°, . . . , 10°] relative to the right-angled orientation of the subsequent chip edges (SK).