Quantum dots light emitting diode and fabricating method thereof, display panel and display apparatus

1. A method of fabricating a quantum dots light emitting diode, comprising co-depositing an electron transport material and an inorganic perovskite material on a base substrate to form a composite layer comprising the electron transport material and the inorganic perovskite material.

2. The method of claim 1 , wherein the inorganic perovskite material comprises CsPbX 3 , wherein X 3 are three halide anions selected from Cl, Br and I, or any combination thereof.

3. The method of claim 1 , wherein the co-depositing is performed by pulsed laser deposition.

4. The method of claim 3 , wherein the co-depositing comprises exposing an inorganic perovskite material target and an electron transport material target separately placed in a same pulsed laser deposition chamber to a laser source.

5. The method of claim 4 , wherein a volume ratio of the inorganic perovskite material to the electron transport material in the composite layer is in a range of approximately 1:100 to approximately 1:10.

6. The method of claim 4 , wherein the volume ratio of the inorganic perovskite material to the electron transport material in the composite layer is approximately 5:95.

7. The method of claim 4 , wherein the co-depositing is performed at a deposition temperature in a range of approximately 450 degrees to approximately 700 degrees.

8. The method of claim 4 , wherein the co-depositing is performed in an oxygen atmosphere under a deposition pressure in a range of approximately 50 mtorr to approximately 150 mtorr.

9. The method of claim 4 , wherein the co-depositing is performed at a laser pulse frequency in a range of approximately 5 Hz to approximately 20 Hz;

and a laser energy density in a range of approximately 100 mJ/cm 2 to about 270 mJ/cm 2 .

10. The method of claim 1 , further comprising annealing the composite layer to form a quantum dots light emitting layer comprising a plurality of quantum dots, and an electron transport layer; wherein the inorganic perovskite material self-assembles into the plurality of quantum dots on a surface of the composite layer during annealing.

11. The method of claim 10 , wherein the annealing is performed for a duration of approximately 10 minutes to 50 minutes.

12. The method of claim 10 , wherein the electron transport layer has a thickness in a range of approximately 10 nm to approximately 100 nm, and the plurality of quantum dots have an average diameter in a range of approximately 2 nm to approximately 20 nm.

13. The method of claim 10 , further comprising forming a hole transport layer comprising a hole transport material on a side of the quantum dots light emitting layer distal to the electron transport layer; wherein the hole transport material is selected from the group consisting of 4,4′-cyclohexylidene bis[N,N-bis(4-methylphenyl)benzenamine (TAPC), 4,4′,4″-tris(N-carbazolyl)triphenylamine (TCTA), N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine (NPB), or any combination thereof.

14. The method of claim 13 , further comprising forming a hole injection layer comprising a hole injection material on a side of the hole transport layer distal to the quantum dots light emitting layer; wherein the hole injection material is selected from the group consisting of MoO 3 , CuPc, poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS).

15. The method of claim 14 , further comprising:

forming a first electrode layer on a side of the hole injection layer distal to the hole transport layer; and

prior to forming the composite layer, forming a second electrode layer on the base substrate; wherein the second electrode layer is formed on a side of the composite layer proximal to the base substrate.

16. The method of claim 1 , wherein the electron transport material comprises an inorganic metal oxide.

17. The method of claim 16 , wherein the inorganic metal oxide is selected from the group consisting of ZnO, TiO 2 , WO 3 , and SnO 2 .

18. A quantum dots light emitting diode, fabricated by a method of claim 1 .

19. A display panel, comprising a quantum dots light emitting diode of claim 18 .

20. A display apparatus, comprising a display panel of claim 19 .