Metal phosphide nanomaterials prepared from single source metal amides
The present invention provides a novel solution or route for metal phosphide (MP x ) nanomaterials from the thermal decomposition of metal bis[bis(diisopropylphosphino)amide], M[N(PPri 2 ) 2 ] 2 , and/or single-source precursors. Synthetic routes to MP x nanomaterials may be used in energy applications including batteries, semiconductors, magnets, catalyst, lasers, inks, electrocatalysts and photodiodes.
1. A method of making nanomaterials comprising the steps of: providing a precursor, said precursor is a solution comprising a metal bis[bis(diisopropylphosphino) amide [M[N(PR 2 ) 2 ] x ] y ; thermally decomposing said metal bis[bis(diisopropylphosphino) amide [M[N(PR 2 ) 2 ] x ] y precursor to form metal phosphide nanomaterials; wherein M is a metal; wherein R is a linear or branched alkyl group and substituted analogs, an aryl or substituted aryl, a silyl alkyl or silyl aryl, or mixtures thereof; wherein x is 0, 1, 2, 3, 4, or 5 depending on the valent state of said metal; and wherein x is chosen to balance the charges of said [M[N(PR 2 ) 2 ] x ] y molecule; and wherein y ranges from 1 to about 5.
2. The method of claim 1 wherein said nanomaterials are MP x .
3. The method of claim 1 wherein said nanomaterials are M x P y .
4. The method of claim 1 wherein M is a metallic element selected from the group consisting of Groups 1-15 in the Period Table of the Elements.
5. The method of claim 1 wherein M is a Lanthanide.
6. The method of claim 1 wherein M is an Actinide.
7. The method of claim 1 wherein said precursor converts to SnP.
8. The method of claim 1 wherein said precursor converts to Sn 4 P 3 .
9. The method of claim 1 further comprising controlling the size of said nanomaterials by changing the temperature of said thermal decomposition.
10. The method of claim 1 wherein M is a metallic element selected from the group consisting of Al, Ga, In, and Tl.
11. The method of claim 1 wherein M is a metallic element selected from the group consisting of Ge, Sn, and Pb.
12. The method of claim 1 wherein M is a metallic element selected from the group consisting of Sb and Bi.