Resin composition, method for manufacturing semiconductor element using the same, and semiconductor device

1. A resin composition, comprising:

(A1) an alkali-soluble resin having a structural unit represented by general formula (1);

(A2) at least one resin selected from the group consisting of polyimides, polybenzoxazoles, polyamideimides, precursors thereof, and copolymers thereof, the resin having a substituent that reacts with a reactive group of the alkali-soluble resin; and

(B) a photosensitizer, wherein

an amount of the resin (A2) is 350 to 2,000 parts by weight with respect to 100 parts by weight of the resin (A1),

wherein R 1 is a hydrogen atom or a C 1-5 alkyl group; R 2 is a hydrogen atom or a C 1-6 alkyl group; a is an integer of 0 to 4; b is an integer of 1 to 3; and a+b is an integer of 1 to 5, and

wherein the resin (A2) has at least one of a polyethylene oxide structure and a polypropylene oxide structure.

2. The resin composition according to claim 1 , wherein the resin (A2) has at least one of a hexafluoro propylene structure and a propylene structure that are shown below

3. The resin composition according to claim 1 , further comprising (d) a thermally crosslinkable compound.

4. A photoresist, comprising the resin composition according to claim 1 .

5. A resin composition, comprising:

(A1) an alkali-soluble resin having a structural unit represented by general formula (1);

(A2) at least one resin selected from the group consisting of polyimides, polybenzoxazoles, polyamideimides, precursors thereof, and copolymers thereof, the resin having a substituent that reacts with a reactive group of the alkali-soluble resin; and

(B) a photosensitizer, wherein

an amount of the resin (A2) is 350 to 2,000 parts by weight with respect to 100 parts by weight of the resin (A1),

wherein R 1 is a hydrogen atom or a C 1-5 alkyl group; R 2 is a hydrogen atom or a C 1-6 alkyl group; a is an integer of 0 to 4; b is an integer of 1 to 3; and a+b is an integer of 1 to 5, and

wherein the resin composition is soluble in a solution having a weight ratio of dimethyl-sulfoxide/monoethanolamine=3/7 after heat-treated at 250° C. for 1 hour.

6. The resin composition according to claim 5 , wherein the resin (A2) has at least one of a hexafluoro propylene structure and a propylene structure that are shown below

7. The resin composition according to claim 5 , further comprising (d) a thermally crosslinkable compound.

8. A photoresist, comprising the resin composition according to claim 5 .

9. A method for manufacturing a semiconductor element, the method comprising the steps of:

(1) forming a pattern of a resin composition on a substrate, the resin composition comprising:

(A1) an alkali-soluble resin having a structural unit represented by general formula (1),

(A2) at least one resin selected from the group consisting of polyimides, polybenzoxazoles, polyamideimides, precursors thereof, and copolymers thereof, the resin having a substituent that reacts with a reactive group of the alkali-soluble resin; and

(B) a photosensitizer, wherein an amount of the resin (A2) is 350 to 2,000 parts by weight with respect to 100 parts by weight of the resin (A1),

wherein R 1 is a hydrogen atom or a C 1-5 alkyl group; R 2 is a hydrogen atom or a C 1-6 alkyl group; a is an integer of 0 to 4; b is an integer of 1 to 3; and a+b is an integer of 1 to 5;

(2) performing, at 150° C. or higher, at least one step selected from the group consisting of (a) doping the substrate with impurity ions, (b) etching the substrate, and (c) dry-forming a film on the substrate; and

(3) peeling off the pattern.

10. The method for manufacturing a semiconductor element according to claim 9 , wherein

the step (a) is

(a-1) a step of implanting ions into the substrate, or

(a-2) a step of exposing, to a dopant, the substrate having the patterned resin film formed thereon.

11. The method for manufacturing a semiconductor element according to claim 9 , wherein

the step (b) is

(b-1) a step of patterning the substrate by dry etching, or

(b-2) a step of patterning the substrate by wet etching.

12. The method for manufacturing a semiconductor element according to claim 9 , wherein the step (c) is a step of dry-forming a metal film on the substrate.

13. The method for manufacturing a semiconductor element according to claim 9 , wherein the substrate includes at least one selected from the group consisting of silicon, silicon dioxide (SiO 2 ), silicon nitride (Si 3 N 4 ), silicon carbide (SiC), gallium nitride (GaN), gallium phosphide (GaP), gallium arsenide (GaAs), aluminum gallium arsenide (GaAlAs), gallium indium nitrogen arsenic (GaInNAs), indium nitride (InN), indium phosphide (InP), indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium arsenide (InGaAs), indium gallium aluminum phosphide (InGaAlP), indium gallium zinc oxide (IGZO), diamond, sapphire (Al 2 O 3 ), aluminum zinc oxide (AZO), aluminum nitride (AlN), zinc oxide (ZnO), zinc selenide (ZnSe), cadmium sulfide (CdS), cadmium telluride (CdTe), aluminum (Al), and gold (Au).

14. A semiconductor device, comprising a semiconductor element obtained by the method according to claim 9 .