Circuit substrate, and electronic device including same

1. A circuit substrate, comprising:

a base comprising a ceramic material,

wherein the base has a first face and a second face, and

wherein the base defines a through hole from the first face to the second face;

a through conductor containing, as main components, silver and copper,

wherein the through conductor is inside the through hole, and

wherein the through conductor has a plurality of surfaces; and

a metal layer in contact with at least one of the plurality of surfaces,

wherein the through conductor includes a eutectic region of silver and copper, in a metal layer side of a diametrically center region of the through conductor, and

wherein the through conductor further includes a non-eutectic region of silver and copper, in a central region of the diametrically center region of the through conductor.

2. The circuit substrate according to claim 1 ,

wherein the metal layer contains silver and copper.

3. The circuit substrate according to claim 1 , further comprising:

a first active metal layer between the base and the through conductor,

wherein the base contains a component, and

wherein the first active metal layer contains

the component, and

at least one selected from titanium, zirconium, hafnium, and niobium.

4. The circuit substrate according to claim 1 ,

wherein the through conductor further contains at least one selected from molybdenum, tantalum, osmium, rhenium, and tungsten.

5. The circuit substrate according to claim 1 ,

wherein the ceramic material is a nitride-based ceramic material.

6. The circuit substrate according to claim 1 ,

wherein the base has an inner face, and

wherein the through conductor has a plurality of extended portions extending through the inner face of the base.

7. The circuit substrate according to claim 6 ,

wherein the extended portions have an average length of 5 μm or more and 20 μm or less.

8. The circuit substrate according to claim 1 , further comprising:

a second active metal layer between the base and the metal layer,

wherein the second active metal layer contains

a component constituting the base, and

at least one selected from titanium, zirconium, hafnium, and niobium.

9. The circuit substrate according to claim 1 , further comprising:

a coating layer on the metal layer,

wherein the coating layer contains at least one selected from silver, copper, nickel, palladium, platinum, and gold.

10. An electronic device, comprising:

the circuit substrate according to claim 1 ; and

an electronic component on the circuit substrate.

11. A circuit substrate, comprising:

a base comprising a ceramic material,

wherein the base has a first face and a second face, and

wherein the base defines a through hole from the first face to the second face;

a through conductor containing, as main components, silver and copper,

wherein the through conductor is inside the through hole, and

wherein the through conductor has a plurality of surfaces; and

a metal layer in contact with at least one of the plurality of surfaces,

wherein the through conductor includes a eutectic region of silver and copper, in a metal layer side of a diametrically center region of the through conductor,

wherein the through conductor further includes a non-eutectic region of silver and copper, in a central region of the diametrically center region of the through conductor, and

wherein the through conductor further contains at least one selected from molybdenum, tantalum, osmium, rhenium, and tungsten.

12. A circuit substrate, comprising:

a base comprising a ceramic material,

wherein the base has a first face and a second face, and

wherein the base defines a through hole from the first face to the second face;

a through conductor containing, as main components, silver and copper,

wherein the through conductor is inside the through hole, and

wherein the through conductor has a plurality of surfaces; and

a metal layer in contact with at least one of the plurality of surfaces,

wherein the through conductor includes a eutectic region of silver and copper, in a metal layer side of a diametrically center region of the through conductor,

wherein the through conductor further includes a non-eutectic region of silver and copper, in a central region of the diametrically center region of the through conductor,

wherein the base has an inner face, and

wherein the through conductor has a plurality of extended portions extending through the inner face toward the base.

13. The circuit substrate according to claim 1 ,

wherein the diametrically center region is a middle region of a distance from one inner face of the through hole to another inner face divided into three equal portions in a section cut in a thickness direction of the base so that a volume of the through conductor is in approximately equal portions,

wherein the metal side layer is a region on the metal side layer of regions in which a distance from the first face to the second face of the base is divided into three equal portions in the diametrically center region, and

wherein the central region is a region in the center of the regions in which the distance from the first face to the second face of the base is divided into three equal portions in the diametrically center region.

14. The circuit substrate according to claim 13 ,

wherein the eutectic region is larger than the non-eutectic regions in the region on the metal layer side, and

wherein the non-eutectic region is larger than the eutectic regions in the central region.