IP Library Granted Patent US 10,483,026
Granted Patent B2
US 10,483,026 · App. 15/569,978 · Granted Nov 19, 2019

Metallic spin super lattice for logic and memory devices

Inventors: Sasikanth Manipatruni (Hillsboro, OR); Anurag Chaudhry (Portland, OR); Dmitri E. Nikonov (Beaverton, OR); Ian A. Young (Portland, OR)
Assignee: Intel Corporation
H01F10/3268G11C11/155G11C11/1675H01L43/08H01L43/10H03K19/16H03K19/18H01F10/265
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Quick Facts
Patent No.
US 10,483,026
App. No.
15/569,978
Granted
Nov 19, 2019
Kind
B2
Abstract

Described is an apparatus which comprises: an input ferromagnet to receive a first charge current and to produce a corresponding spin current; and a stack of metal layers configured to convert the corresponding spin current to a second charge current, wherein the stack of metal layers is coupled to the input magnet.

Claims (36)

1. An apparatus comprising:

a magnet to receive a first charge current and to produce a corresponding spin current; and

a stack of structures, wherein the stack is to convert the corresponding spin current to a second charge current, wherein one structure of the stack of structures is adjacent to the magnet, and wherein the stack comprises a spin metallic super-lattice which includes a lattice of an alloy and a non-alloy metal.

2. The apparatus of claim 1 , wherein the alloy has a surface corrugation.

3. The apparatus of claim 1 , wherein the alloy comprises a heavy metal.

4. The apparatus of claim 1 , wherein the non-alloy metal of the stack is coupled to the magnet.

5. The apparatus of claim 4 , wherein the non-alloy metal includes one of:

Ag,

Cu, or

Au.

6. The apparatus of claim 1 , wherein the alloy includes one of:

Bi and Ag;

Bi and Cu; or

Pb and Ag.

7. The apparatus of claim 1 , wherein the corresponding spin current is converted to the second charge current as the corresponding spin current flows through the alloy and the non-alloy metal.

8. The apparatus of claim 1 , wherein the alloy has a high density two dimensional (2D) electron gas with high Rashba spin orbit coupling, and wherein the 2D electron gas becomes a 2D spin gas when the second charge current flows though the 2D electron gas.

9. The apparatus of claim 1 , wherein the spin metallic super-lattice is matched to the magnet.

10. The apparatus of claim 1 , wherein the non-alloy metal of the spin metallic super-lattice is matched to the magnet, and wherein the non-alloy metal is followed by an interface of the alloy.

11. The apparatus of claim 1 , wherein the magnet comprises a Heusler alloy.

12. The apparatus of claim 1 , wherein a sign or direction of the second charge current is according to a direction of magnetization of the magnet.

13. A system comprising:

a memory;

a processor coupled to the memory, the processor having an apparatus which includes:

an input ferromagnet to receive a first charge current and to produce a corresponding spin current; and

a stack of metal layers configured to convert the corresponding spin current to a second charge current, wherein the stack of metal layers is coupled to the input ferromagnet, wherein the stack of metal layers forms a spin metallic super-lattice with a surface alloy, and wherein the spin metallic super-lattice includes a lattice of the surface alloy and a non-alloy metal; and

a wireless interface to allow the processor to communicate with another device.

14. The apparatus of claim 1 , wherein the stack is operable for write operation by a forward Rashba effect, and wherein the stack is operable for read operation by an inverse Rashba-Edelstein effect.

15. The apparatus of claim 1 comprises an interconnect including metal, wherein the interconnect is adjacent to a sidewall of the stack to provide the output charge current to another device.

16. An apparatus comprising:

a magnet; and

a stack of structures adjacent to the magnet, wherein the stack comprises a spin metallic super-lattice which includes a lattice of an alloy and a non-alloy metal, wherein:

the non-alloy metal includes one of: Ag, Cu, or Au; and

the alloy includes one of: Bi and Ag; Bi and Cu; or Pb and Ag.

17. The apparatus of claim 16 , comprises an interconnect including metal, wherein the interconnect is adjacent to a sidewall of the stack to provide the output charge current to another device.

18. The apparatus of claim 16 , wherein the alloy has a surface corrugation.

19. The apparatus of claim 16 , wherein the alloy comprises a heavy metal.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 15, 2022
From: INTEL CORPORATION
To: TAHOE RESEARCH, LTD.
Reel/Frame 061175/0176 →
Continuity (1)
Related Publication 20180158588A1 · Jun 7, 2018