IP Library › Granted Patent US 10,727,072
Granted Patent B2
US 10,727,072 · App. 15/572,553 · Granted Jul 28, 2020

System and method for wafer-scale fabrication of free standing mechanical and photonic structures by ion beam etching

Inventors: Haig Avedis Atikian (Somerville, MA); Marko Loncar (Cambridge, MA)
Assignee: President and Fellows of Harvard College
H01L21/3065B81C99/0095B81B2207/053B81B2207/056B81C2201/0143B81C2201/038B81C2201/056
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Quick Facts
Patent No.
US 10,727,072
App. No.
15/572,553
Granted
Jul 28, 2020
Kind
B2
Abstract

A method for fabrication of free standing mechanical and photonic structures is presented. A resist mask is applied to a bulk substrate. The bulk substrate is attached to a movable platform. The bulk substrate is exposed to an ion stream produced by a reactive ion beam etching source. The platform is moved relative to the ion stream to facilitate undercutting a portion of the bulk substrate otherwise shielded by the mask.

Claims (27)

1. A method for simultaneous fabrication of multiple free standing mechanical and photonic structures, comprising the steps of:

applying a resist mask to a bulk substrate;

attaching the bulk substrate to a movable platform;

forming with a collimated reactive ion beam etching (RIBE) source a RIBE ion stream comprising ions that chemically react with the bulk substrate material;

collimating the RIBE ion stream via ion optics;

exposing the bulk substrate to the RIBE ion stream directed at the movable platform; and

moving the platform relative to the ion stream to facilitate undercutting a portion of the bulk substrate otherwise shielded by the mask to simultaneously mill multiple nanostructures with the RIBE ion stream.

2. The method of claim 1 , wherein the bulk substrate comprises diamond.

3. The method of claim 1 , wherein moving the platform comprises laterally displacing the platform in a plane substantially parallel to the ion stream.

4. The method of claim 1 , wherein moving the platform comprises tilting the platform relative to a plane substantially parallel to the ion stream.

5. The method of claim 4 , wherein a tilt angle of the platform relative to the ion stream is in the range of 10 degrees to 80 degrees.

6. The method of claim 4 , wherein moving the platform further comprises rotating the platform relative to the ion stream.

7. The method of claim 3 , further comprising the step of adjusting the ion stream according to the orientation and/or position of the platform relative to the ion stream.

8. The method of claim 1 , wherein the ion stream comprises oxygen ions, and the substrate comprises diamond.

9. The method of claim 1 , wherein the ion stream comprises fluorine ions, and the substrate comprises quartz.

10. The method according to claim 1 , wherein the ion stream produced by the collimated reactive ion beam etching source comprises a beam diameter in the range of 4 cm to 22 cm.

11. The method according to claim 6 , wherein the ion stream produced by the collimated reactive ion beam etching source comprises a beam diameter in the range of 4 cm to 22 cm.

12. A method for simultaneous fabrication of multiple free standing mechanical and photonic structures, comprising the steps of:

applying a resist mask to a bulk substrate;

attaching the bulk substrate to a movable platform;

forming with a collimated reactive ion beam etching (RIBE) source a RIBE ion stream comprising ions that chemically react with the bulk substrate material;

collimating the RIBE ion stream via ion optics;

exposing the bulk substrate to the RIBE ion stream directed at the movable platform;

top down etching the substrate, wherein the ion beam is perpendicular to a top surface of the substrate; and

moving the platform relative to the ion stream to facilitate undercutting a portion of the bulk substrate otherwise shielded by the mask to simultaneously mill multiple nanostructures with the RIBE ion stream.

13. The method of claim 12 , wherein moving the platform comprises laterally displacing the platform in a plane substantially parallel to the ion stream and tilting the platform relative to a plane substantially horizontal to the ion stream in the range of 10 degrees to 80 degrees.

14. The method of claim 13 , wherein moving the platform further comprises rotating the platform relative to the ion stream.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 23, 2020
From: ATIKIAN, HAIG A.; LONCAR, MARKO
To: PRESIDENT AND FELLOWS OF HARVARD COLLEGE
Reel/Frame 052479/0345 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 8, 2017
From: ATIKIAN, HAIG AVEDIS; LONCAR, MARKO
To: PRESIDENT AND FELLOWS OF HARVARD COLLEGE
Reel/Frame 044070/0227 →
Continuity (2)
Provisional Application 62162058 · May 15, 2015
Related Publication 20180138047A1 · May 17, 2018