IP Library Granted Patent US 10,593,856
Granted Patent B2
US 10,593,856 · App. 15/574,065 · Granted Mar 17, 2020

Mechanical and thermal electric generators

Inventors: Qiliang Li (Fairfax, VA); Sheng Yu (Fairfax, VA); Abbas Arab (Fairfax, VA)
Assignee: GEORGE MASON UNIVERSITY
H01L35/16H01L31/035227H01L35/00H01L35/02H01L35/34H01L41/113H01L41/18H02N2/18B82Y30/00H01L21/02568
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Quick Facts
Patent No.
US 10,593,856
App. No.
15/574,065
Granted
Mar 17, 2020
Kind
B2
Abstract

Devices for generating electrical energy along with methods of fabrication and methods of use are disclosed. An example device can comprise one or more layers of a transition metal dichalcogenide material. An example device can comprise a mechano-electric generator. Another example device can comprise a thermoelectric generator.

Claims (10)

1. A device comprising:

a first portion of a layer comprising a p-type transition metal dichalcogenide material, the first portion having a first side and a second side opposite the first side;

a second portion of the layer comprising a n-type transition metal dichalcogenide material, the second portion having a third side and a fourth side opposite the third side, wherein the first side of the first portion and the third side of the second portion form a PN junction;

a first electrode of the layer adjacent to the second side of the first portion of the layer; and

a second electrode of the layer adjacent to the fourth side of the second portion of the layer, wherein the layer is configured to provide electrical energy via one or more of the first electrode or the second electrode in response to receiving mechanical energy at the layer.

2. The device of claim 1 , wherein the layer comprises a two-dimensional monolayer.

3. The device of claim 1 , wherein the p-type transition metal dichalcogenide material and the n-type transition metal dichalcogenide material comprises molybdenum disulfide.

4. The device of claim 1 , wherein the p-type transition metal dichalcogenide material is doped with phosphorus and wherein then-type transition metal dichalcogenide material is doped with chlorine.

5. The device of claim 1 , wherein the PN junction comprises a heterojunction and wherein the heterojunction comprises tungsten di selenide and molybdenum disulfide.

6. The device of claim 1 , wherein the mechanical stress is at least along a length of the layer.

Assignments (3)
CONFIRMATORY LICENSE Recorded May 10, 2023
From: GEORGE MASON UNIVERSITY
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 063594/0204 →
CONFIRMATORY LICENSE Recorded Nov 20, 2020
From: GEORGE MASON UNIVERSITY
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 054426/0831 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 24, 2020
From: LI, QILIANG; YU, SHENG; ARAB, ABBAS
To: GEORGE MASON UNIVERSITY
Reel/Frame 051612/0218 →
Continuity (2)
Provisional Application 62166537 · May 26, 2015
Related Publication 20180323359A1 · Nov 8, 2018