Transparent conductive film
A transparent conductive film includes: a transparent substrate film; an antistripping layer with a thickness of 1.5 nm to 8 nm formed on one main surface of the substrate film; an optical adjustment layer with a thickness of 10 nm to 25 nm formed on the antistripping layer; and a transparent conductor layer with a pattern formed on the optical adjustment layer. The transmission Y value measured from a side of the transparent conductor layer is 88.0 or more and the reflection color difference ΔE between a pattern portion and a non-pattern portion is 7.0 or less.
1. A transparent conductive film comprising:
a transparent substrate film;
an antistripping layer formed on one main surface of the substrate film;
an optical adjustment layer including an inorganic oxide formed on the antistripping layer; and
a transparent conductor layer having a pattern formed on the optical adjustment layer,
wherein the pattern includes a pattern portion with the transparent conductor layer and a non-pattern portion without the transparent conductor layer,
the antistripping layer has a thickness of 1.5 nm to 8 nm,
the substrate film has a thermal shrinkage of −0.5% to +1.5% in the main surface;
a transmission Y value measured from a side of the transparent conductor layer is 88.0 or more, and
a reflection color difference ΔE between the pattern portion and the non-pattern portion represented by the following formula (1) is 7.0 or less:
Δ E =[( L* 1 −L* 2 ) 2 +( a* 1 −a* 2 ) 2 +( b* 1 −b* 2 ) 2 ] 0.5 (1)
wherein L* 1 represents a reflection L* value of the pattern portion, L* 2 represents a reflection L* value of the non-pattern portion, a* 1 represents a reflection a* 1 value of the pattern portion, a* 2 represents a reflection a* 2 value of the non-pattern portion, b* 1 represents a reflection b* 1 value of the pattern portion, and b* 2 represents a reflection value b* 2 of the non-pattern portion.
2. The transparent conductive film according to claim 1 , wherein the optical adjustment layer has a thickness of 10 nm to 25 nm.
3. The transparent conductive film according to claim 1 , wherein the antistripping layer includes a non-stoichiometric inorganic compound.
4. The transparent conductive film according to claim 1 , wherein the antistripping layer includes silicon atoms.
5. The transparent conductive film according to claim 1 , wherein the antistripping layer includes a silicon compound.
6. The transparent conductive film according to claim 4 , wherein bond energy of a Si2p bond has an area of 98.0 eV or more to less than 103.0 eV.
7. The transparent conductive film according to claim 1 , wherein the antistripping layer includes a silicon oxide.
8. The transparent conductive film according to claim 1 , further comprising a hard coat layer formed between the substrate film and the antistripping layer.
9. The transparent conductive film according to claim 8 , wherein the hard coat layer has a refractive index of 1.60 to 1.70 and a thickness of 250 nm to 2,000 nm.
10. The transparent conductive film according to claim 8 , wherein the hard coat layer contains any one of zirconium oxide ZrO 2 , silicon dioxide SiO 2 , titanium oxide TiO 2 , tin oxide SnO 2 , aluminum oxide Al 2 O 3 or at least two kinds of inorganic fine particles of these.
11. The transparent conductive film according to claim 1 , further comprising a functional layer formed on the other main surface of the substrate film located on a side opposite to the transparent conductor layer.
12. The transparent conductive film according to claim 11 , wherein the functional layer is composed of an anti-blocking hard coat layer.
13. The transparent conductive film according to claim 2 , wherein the antistripping layer includes a non-stoichiometric inorganic compound.
14. The transparent conductive film according to claim 5 , wherein bond energy of a Si2p bond has an area of 98.0 eV or more to less than 103.0 eV.
15. The transparent conductive film according to claim 2 , wherein the antistripping layer includes a silicon oxide.
16. The transparent conductive film according to claim 2 , wherein the substrate film has a thermal shrinkage of −0.5% to +1.5% in the main surface.
17. The transparent conductive film according to claim 9 , wherein the hard coat layer contains any one of zirconium oxide ZrO2, silicon dioxide SiO 2 , titanium oxide TiO 2 , tin oxide SnO 2 , aluminum oxide Al 2 O 3 or at least two kinds of inorganic fine particles of these.
18. The transparent conductive film according to claim 2 , further comprising a functional layer formed on the other main surface of the substrate film located on a side opposite to the transparent conductor layer.
19. The transparent conductive film according to claim 18 , wherein the functional layer is composed of an anti-blocking hard coat layer.