IP Library › Granted Patent US 10,305,034
Granted Patent B2
US 10,305,034 · App. 15/577,408 · Granted May 28, 2019

Variable resistance element and method for producing variable resistance element

Inventors: Munehiro Tada (Tokyo, JP); Naoki Banno (Tokyo, JP); Koichiro Okamoto (Tokyo, JP)
Assignee: NEC CORPORATION
H01L45/1266H01L45/085H01L45/1233H01L45/1253H01L45/145G11C2213/51H01L45/08H01L45/124H01L45/14H01L45/146
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Quick Facts
Patent No.
US 10,305,034
App. No.
15/577,408
Granted
May 28, 2019
Kind
B2
Abstract

In order to improve the number rewrites by improving the dielectric breakdown resistance of an ion conducting layer in a variable resistance element, this variable resistance element is provided with: a first electrode that contains at least copper; a second electrode that contains at least Ru, nitrogen and a first metal; and an ion conducting layer that is positioned between the first electrode and the second electrode.

Claims (11)

1. A variable resistance element comprising a first electrode that contains at least copper, a second electrode that contains at least Ru, nitrogen and a first metal, and an ion conducting layer positioned between the first electrode and the second electrode,

wherein a content of nitrogen in the second electrode is less than 20 atm %.

2. The variable resistance element according to claim 1 , wherein the first metal has negatively greater standard formation free energy of oxidation than that of Ru.

3. The variable resistance element according to claim 1 , wherein the first metal is at least one of Ti, Ta, Al, Mn, Zr, Hf, Mg, Co and Zn.

4. The variable resistance element according to claim 1 , wherein the second electrode has a hexagonal close-packed structure.

5. The variable resistance element according to claim 1 , wherein a content of the first metal in the second electrode is greater than or equal to 10 atm % and less than 20 atm %.

6. The variable resistance element according to claim 1 , wherein a content of the nitrogen and a content of the first metal in the second electrode are equal.

7. The variable resistance element according to claim 1 , wherein a ratio between the nitrogen and the first metal in the second electrode is a stoichiometric composition.

8. The variable resistance element according to claim 1 , wherein the sum of a content of the nitrogen and a content of the first metal in the second electrode is less than or equal to 40 atm %.

9. The variable resistance element according to claim 1 , further comprising a third electrode that is in contact with the second electrode and is not in contact with the ion conducting layer, wherein the third electrode contains at least the first metal and nitrogen.

10. The variable resistance element according to claim 1 , wherein the first electrode contains the first metal in addition to copper.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 6, 2021
From: NEC CORPORATION
To: NANOBRIDGE SEMICONDUCTOR, INC.
Reel/Frame 054913/0386 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 28, 2017
From: TADA, MUNEHIRO; BANNO, NAOKI; OKAMOTO, KOICHIRO
To: NEC CORPORATION
Reel/Frame 044233/0338 →
Priority Claims (1)
JP 2015-118014 · Jun 11, 2015 · national
Continuity (1)
Related Publication 20180166630A1 · Jun 14, 2018