Image sensor, electronic device, control device, control method, and program
The present technology relates to an image sensor capable of achieving both higher S/N and higher frame rate, an electronic device, a control device, a control method, and a program. An AD converter has a comparator in which differential pairs are provided at an input stage. The differential pairs have a plurality of transistors as first transistors and second transistors paired to configure the differential pairs. The AD converter compares a level-changing reference signal with an electric signal output by a shooting unit for performing photoelectric conversion and outputting the electric signal, thereby performing AD conversion on the electric signal. The comparator is controlled such that a transistor to be operated is selected as active transistor from among the transistors depending on the amount of light incident in the shooting unit and the active transistor operates. The present technology is applicable to an image sensor for shooting an image, and the like, for example.
1. An image sensor comprising:
an AD converter having a comparator in which differential pairs having a plurality of transistors as first transistors and second transistors paired to configure the differential pairs are provided at an input stage, for performing analog to digital (AD) conversion on an electric signal by comparing a level-changing reference signal with the electric signal output by a shooting unit for performing photoelectric conversion and outputting the electric signal; and
a control unit for performing control such that a transistor to be operated is selected as active transistor from among the transistors depending on the amount of light incident in the shooting unit, and the active transistor is operated.
2. The image sensor according to claim 1 ,
wherein the control unit selects the active transistor such that as the amount of light is smaller, a variation of a threshold voltage of the first and second transistors is smaller, and as the amount of light is larger, a time constant of the first and second transistors is lower.
3. The image sensor according to claim 1 ,
wherein the control unit selects a smaller number of transistors as the active transistors as the amount of light is larger.
4. The image sensor according to claim 1 ,
wherein the transistors include transistors with different gate oxide film thicknesses.
5. The image sensor according to claim 4 ,
wherein the control unit selects, as the active transistor, a transistor with a larger oxide film thickness as the amount of light is larger.
6. The image sensor according to claim 4 ,
wherein the transistors include two or more transistors with a predetermined oxide film thickness.
7. An electronic device comprising:
an optical system for focusing light; and
an image sensor for receiving a light and shooting an image,
wherein the image sensor comprises:
an AD converter having a comparator in which differential pairs having a plurality of transistors as first transistors and second transistors paired to configure the differential pairs are provided at an input stage, for performing analog to digital (AD) conversion on an electric signal by comparing a level-changing reference signal with the electric signal output by a shooting unit for performing photoelectric conversion and outputting the electric signal; and
a control unit for performing control such that a transistor to be operated is selected as active transistor from among the transistors depending on the amount of light incident in the shooting unit, and the active transistor is operated.