Method for producing a nitride semiconductor component, and a nitride semiconductor component
The invention relates to a method for producing a nitride semiconductor component ( 100 ), comprising the steps of: —providing a growth substrate ( 1 ) having a growth surface ( 10 ) formed from a planar area ( 11 ) with a plurality of three-dimensionally shaped surface structures ( 12 ) on said planar area ( 11 ), —growing a nitride-based semiconductor layer sequence ( 30 ) on the growth surface ( 10 ), growth beginning selectively on a growth area ( 13 ) of said growth substrate, and the growth area ( 13 ) being less than 45% of the growth surface ( 10 ). The invention also relates to a nitride semiconductor component ( 100 ) which can be produced according to said method.
1. A method for producing a nitride semiconductor component, comprising the following steps:
providing a structured growth substrate, the structured growth substrate having a growth surface formed from a planar area with a plurality of three-dimensionally shaped surface structures which are protrusions of the structured growth substrate that extend away from the planar area, wherein the protrusions of the structured growth substrate have a conical or pyramidal shape,
growing a nitride-based semiconductor layer sequence on the growth surface, the growing beginning selectively on a growth area of the growth substrate, wherein the growth area is less than 40% of the growth surface, and
depositing a layer on part of the planar area so as to reduce the growth area, the layer comprising a material on which growth of a nitride semiconductor layer material is difficult or impossible.
2. The method according to claim 1 , wherein the growth area is less than 25% of the growth surface.
3. The method according to claim 1 , wherein the growth area is less than 5% of the growth surface.
4. The method according to claim 1 , wherein the growth area is the planar area or part of the planar area.
5. The method according to claim 1 , wherein the growth area is smaller than the planar area.
6. The method according to claim 1 , wherein the material includes a silicon oxide, a silicon nitride, or a titanium nitride.
7. The method according to claim 1 , wherein the growth area is constituted by a plurality of non-interconnected portions of the planar area.
8. The method according to claim 7 , wherein the non-interconnected portions of the planar area abut on the three-dimensional structures.
9. The method according to claim 7 , wherein a layer is deposited on part of the planar area so as to reduce the growth area, which layer is of a material on which growth of a nitride semiconductor material is difficult or impossible, and wherein the non-interconnected portions of the planar area are openings in the layer of the material on which growth of a nitride semiconductor material is difficult or impossible.
10. The method according to claim 1 , wherein a nucleation layer is deposited on at least part of the planar area, which layer promotes the growth of a nitride semiconductor material thereon.
11. The method according to claim 10 , wherein the nucleation layer includes an oxygen-containing aluminum nitride.
12. The method according to claim 1 , wherein the growth substrate comprises sapphire.
13. A nitride semiconductor component, comprising:
a structured growth substrate, the structured growth substrate having a growth surface formed from a planar area with a plurality of three-dimensionally shaped surface structures which are protrusions of the structured growth substrate that extend away from the planar area, and
a nitride-based semiconductor layer sequence arranged on the growth surface,
wherein
the nitride-based semiconductor layer sequence has growth areas arranged on a growth area at an interface with the growth substrate,
the growth areas have a higher defect density than the rest of the semiconductor layer sequence,
the growth area is less than 45% of the growth surface, and
the protrusions of the structured growth substrate have a conical or pyramidal shape, and
a layer is deposited on part of the planar area so as to reduce the growth area, the layer comprising a material on which growth of a nitride semiconductor layer material is difficult or impossible.
14. The nitride semiconductor component according to claim 13 , wherein
the nitride semiconductor component is a radiation-emitting optoelectronic component, and
the growth substrate is transparent.
15. The nitride semiconductor component according to claim 14 , wherein the growth substrate is a sapphire substrate.
16. The nitride semiconductor component according to claim 13 , wherein a mirror layer is provided on a rear side of the growth substrate which faces away from the semiconductor layer sequence.
17. The nitride semiconductor component according to claim 13 , wherein the material includes a silicon oxide, a silicon nitride, or a titanium nitride.