Selective solar absorbers with tuned oxygen deficiency and methods of fabrication thereof
Systems and methods disclosed herein are directed towards the fabrication of a solar absorber comprising an IR reflector layer deposited on a substrate; a first cermet layer deposited in contact with the IR reflector layer; a second cermet layer deposited in contact with the first cermet layer; a first anti-reflection coating layer deposited in contact with the second cermet layer; a second anti-reflection coating layer deposited in contact with the first anti-reflection coating layer. A sputtering process may be used to deposit some or all of the layers, and the YSZ layers in each cermet layer may be deposited with a tuned partial oxygen pressure in order to form a layer that is oxygen-deficient.
1. A solar absorber, comprising:
an IR reflector layer in contact with a substrate;
a first cermet layer in contact with the IR reflector layer;
a second cermet layer in contact with the first cermet layer, wherein the first cermet layer and the second cermet layer each comprise a metal volume fraction in a ceramic host material, wherein the metal volume fraction of the first cermet layer, the metal volume fraction of the second cermet layer, or both the metal volume fraction of the first cermet layer and the metal volume fraction of the second cermet layer comprises nickel (Ni);
a sputtered first anti-reflection coating layer in contact with the second cermet layer; and
a sputtered second anti-reflection coating layer in contact with the first anti-reflection coating layer,
wherein the first sputtered anti-reflection coating layer is deposited at a higher partial oxygen pressure than the second anti-reflection coating layer, such that the first anti-reflection coating layer is a fully oxidized layer.
2. The solar absorber of claim 1 , wherein the substrate comprises stainless steel, aluminum, copper, or combinations thereof.
3. The solar absorber of claim 1 , wherein the IR reflector comprises tungsten (W), silver (Ag), molybdenum (Mo), or combinations thereof.
4. The solar absorber of claim 1 , wherein the first anti-reflection layer comprises yttria-stabilized zirconia (YSZ) or Al 2 O 3 .
5. The solar absorber of claim 1 , wherein the second anti-reflection layer comprises SiO 2 .
6. The solar absorber of claim 1 , wherein the ceramic host material of the first cermet layer and the ceramic host material of the second cermet layer each comprise yttria-stabilized zirconia (YSZ) and wherein the metal volume fraction of the first cermet layer, the metal volume fraction of the second cermet layer, or both the metal volume fraction of the first cermet layer and the metal volume fraction of the second cermet layer further comprise W, Ag, Mo, Ta, or a combination thereof.
7. The solar absorber of claim 6 , wherein the metal volume fraction of the first cermet layer is higher than the metal volume fraction of the second cermet layer in the YSZ ceramic host material.
8. The solar absorber of claim 1 , wherein the first cermet layer, the second cermet layer, and the first sputtered anti-reflection coating each comprise yttria-stabilized zirconia (YSZ).
9. The solar absorber of claim 1 , wherein the IR reflector layer comprises tungsten (W), wherein the ceramic host material of the first cermet layer and the ceramic host material of the second cermet layer each comprise yttria-stabilized zirconia (YSZ) and wherein the metal volume fraction of the first cermet layer, the metal volume fraction of the second cermet layer, or both the metal volume fraction of the first cermet layer and the metal volume fraction of the second cermet layer further comprises W, Ag, Mo, Ta, or a combination thereof, and wherein the metal volume fraction of the first cermet layer is higher than the metal volume fraction of the second cermet layer in the YSZ ceramic host material, wherein the first sputtered anti-reflection coating layer comprises YSZ, wherein the second sputtered anti-reflection coating layer comprises silica (SiO 2 ), and wherein the solar absorber demonstrates a solar absorptance of about 0.91 and a total hemispherical emittance of about 0.13 at 500° C.
10. A method of fabricating a solar absorber, comprising:
depositing, by sputtering, an IR reflector layer on a substrate;
depositing, by sputtering, a first cermet layer in contact with the IR reflector layer;
depositing, by sputtering, a second cermet layer in contact with the first cermet layer;
depositing, by sputtering, a first anti-reflection coating layer in contact with the second cermet layer;
depositing, by sputtering, a second anti-reflection coating layer in contact with the first anti-reflection coating layer,
wherein the first cermet layer and the second cermet layer each comprise a metal volume fraction in a ceramic host material, wherein the metal volume fraction of the first cermet layer, the material volume fraction of the second cermet layer, or both the metal volume fraction of the first cermet layer and the metal volume fraction of the second cermet layer further comprises nickel (Ni), and
wherein the first anti-reflection coating layer is deposited at a higher partial oxygen pressure than the second anti-reflection coating layer, such that the first anti-reflection coating layer is a fully oxidized layer.
11. The method of claim 10 , further comprising fabricating the IR reflector layer by sputtering at a DC power density of about (1-5) W/cm 2 .
12. The method of claim 10 , wherein the ceramic host material of the first cermet layer comprises YSZ and wherein the metal volume fraction of the first cermet layer further comprises W, Ag, Mo, Ta, or a combination thereof.
13. The method of claim 12 , wherein the first cermet layer is deposited by sputtering using a DC power density of about 0.1 W/cm 2 to about 3 W/cm 2 for W, Mo, or Ag, 0.1 W/cm 2 to about 10 W/cm 2 for Ni, Ag, Mo, or TaNi, and a RF power density of about 1 W/cm 2 to about 20 W/cm 2 for YSZ.
14. The method of claim 12 , wherein the second cermet layer is deposited by sputtering at a DC power density of about 0.1 W/cm 2 to about 3 W/cm 2 for W, Mo, or Ag, 0.1 W/cm 2 to about 10 W/cm 2 for Ni, Ag, Mo, or Ta, and a RF power density of about 1 W/cm 2 to about 20 W/cm 2 for YSZ.
15. The method of claim 10 , wherein the ceramic host material of the second cermet layer comprises YSZ and the metal volume fraction of the second cermet layer further comprises W, Ag, Mo, Ta, or a combination thereof.
16. The method of claim 10 , wherein the first anti-reflection layer comprises YSZ and Al 2 O 3 , and is deposited by sputtering at a RF power density of 1 W/cm 2 to about 20 W/cm 2 .
17. The method of claim 16 , wherein the first anti-reflection layer is deposited at an oxygen partial pressure from about zero to about 0.375 mTorr.
18. The method of claim 10 , wherein the second anti-reflection layer comprises SiO 2 and is deposited by sputtering using a RF power density of about 1 W/cm 2 to about 20 W/cm 2 .
19. The method of claim 18 , wherein the second anti-reflection layer is deposited at an oxygen partial pressure from about zero to about 0.375 mTorr.
20. The method of claim 10 wherein the second anti-reflection layer is deposited at an oxygen partial pressure from about 10% to about 50% less than the oxygen partial pressure used to deposit the first anti-reflection layer.