MICROELECTRONIC DEVICES AND METHODS FOR FILLING VIAS IN MICROELECTRONIC DEVICES

1 . A packaged microelectronic device comprising:

a die having a first side and a second side opposite to the first side, the die further having an integrated circuit positioned between the first and second sides;

a bond-pad positioned on the first side of the die and electrically coupled to the integrated circuit;

a passage extending completely through the die and extending through the bond-pad;

an insulative layer deposited in the passage;

a first conductive material deposited in a first portion of the passage adjacent to the first side of the die to form a conductive plug electrically connected to the bond-pad, wherein the first conductive material directly contacts the insulative layer between the first side of the dies and the second side of the die; and

a second conductive material deposited in a second portion of the passage in contact with the conductive plug to at least generally fill the passage from the conductive plug to the second side of the die, wherein the second conductive material directly contacts the insulative layer between the first side of the die and the second side of the die.

2 . The packaged microelectronic device of claim 1 wherein the insulative layer is deposited in the passage between the die and the first and second conductive materials.

3 . The microelectronic device set of claim 12 , further comprising an insulative layer deposited in the passage between the first die and the first conductive material and between the first die and the second conductive materials, wherein the insulative layer defines the inner wall of the passage.

4 . The packaged microelectronic device of claim 1 wherein the first conductive material includes an electronic ink.

5 . The packaged microelectronic device of claim 1 wherein the first conductive material includes a nano-particle deposition.

6 . A microfeature workpiece having a first side and a second side opposite to the first side, the microfeature workpiece comprising:

at least one die;

a bond-pad formed on the first side of the microfeature workpiece;

a passage extending completely through the bond-pad and the die from the first side of the microfeature workpiece to the second side of the microfeature workpiece;

an insulative layer deposited in the passage,

a first conductive material deposited in a first portion of the passage adjacent to the first side of the microfeature workpiece to form a conductive plug in contact with the bond-pad, wherein the first conductive material directly contacts the insulative layer between the first side of the microfeature workpiece and the second side of the microfeature workpiece; and

a second conductive material deposited in a second portion of the passage in contact with the conductive plug to at least generally fill the passage from the conductive plug to the second side of the microfeature workpiece, wherein the second conductive material directly contacts the insulative layer between the first side of the microfeature workpiece and he second side of the microfeature workpiece, and wherein the first conductive material is different than the second conductive material.

7 . The microfeature workpiece of claim 6 wherein the first conductive material includes an electronic ink.

8 . The microfeature workpiece of claim 6 wherein the first conductive material includes a nano-particle deposition.

9 . The microfeature workpiece of claim 6 wherein the insulative layer is deposited in the passage between the die and the first conductive material and between the dies and the second conductive materials.

10 . The microfeature workpiece of claim 6 , further comprising a metallic layer formed on the first side of the microfeature workpiece.

11 . The microfeature workpiece of claim 6 wherein the bond-pad is formed on the die.

12 . A microelectronic device set comprising:

a first microelectronic device having:

a first die with a first integrated circuit and a first bond-pad electrically coupled to the first integrated circuit, the first die further including a passage extending completely through the first die and the first bond-pad; and

a conductive interconnect deposited in the passage, the conductive interconnect including a first conductive material and a second conductive material, wherein the first conductive material is deposited in a first portion of the passage to form a conductive plug in direct contact with an inner wall of the passage and having a boundary in the passage, and wherein the second conductive material is deposited in a second portion of the passage in contact with the inner wall of the passage and the boundary of conductive plug to at least generally fill the passage; and

at least a second microelectronic device having a second die with a second integrated circuit and a second bond-pad electrically coupled to the second integrated circuit, wherein the second bond-pad is electrically coupled to the conductive interconnect of the first microelectronic device.

13 . The microelectronic device set of claim 12 wherein the first microelectronic device is attached to the second microelectronic device in a stacked-die arrangement.

14 . The microelectronic device set of claim 12 , further comprising a solder ball disposed between the conductive interconnect of the first microelectronic device and the second bond-pad of the second microelectronic device to electrically couple the first bond-pad to the second bond-pad.

15 . The microelectronic device set of claim 12 wherein the passage is a first passage, wherein the second microelectronic device further includes a second passage extending through the second die and the second bond-pad, and wherein the second passage is completely filled with a third conductive material.

16 . The microelectronic device set of claim 12 wherein the first microelectronic device further includes a redistribution layer formed on the first die, the redistribution layer including a conductive line having a first end portion attached to the first bond-pad and a second end portion positioned outward of the first end portion, wherein the second end portion is configured to receive electrical signals and transmit the signals to at least the first integrated circuit of the first die and the second integrated circuit of the second die.

17 . A microelectronic device set comprising:

a first microelectronic device having:

a first die having a first side and a second side opposite to the first side, the first die further having a first integrated circuit and a first bond-pad electrically coupled to the first integrated circuit, the first die further including a passage extending through the first bond-pad;

an insulative layer deposited in the passage between the first side of the first die and the second side of the first die, and

a conductive interconnect deposited in the passage, the conductive interconnect including a first conductive material deposited in a first portion of the passage to form a conductive plug in direct contact with the bond-pad and the insulative layer, and a second conductive material deposited in a second portion of the passage in direct contact with the conductive plug and the insulative layer to at least generally fill the passage; and

at least a second microelectronic device having a second die with a second integrated circuit and a second bond-pad electrically coupled to the second integrated circuit, wherein the second bond-pad is electrically coupled to the first bond-pad of the first microelectronic device.

18 . The microelectronic device set of claim 17 wherein the insulative layer is deposited in the passage between first die and the first conductive material and between the first die and the second conductive material.

19 . The microelectronic devices set of claim 17 wherein the first conductive material includes an electronic ink.

20 . The microelectronic device of claim 17 wherein the first conductive material includes a nano-particle deposition.