Semiconductor treatment composition and treatment method
A semiconductor treatment composition includes particles having a particle size of 0.1 to 0.3 micrometers in a number of 3×10 1 to 1.5×10 3 per mL.
1. A semiconductor treatment composition comprising:
particles having a particle size of 0.1 to 0.3 micrometers in a number of 3×10 1 to 1.5×10 3 per mL,
wherein the particles include at least one particles selected from a group consisting of metal particles and metal oxide particles.
2. The semiconductor treatment composition according to claim 1 , the semiconductor treatment composition being used in a 1 to 500-fold diluted state.
3. The semiconductor treatment composition according to claim 1 , further comprising an organic acid.
4. The semiconductor treatment composition according to claim 1 , further comprising a water-soluble polymer.
5. The semiconductor treatment composition according to claim 4 , wherein the weight average molecular weight (Mw) of the water-soluble polymer is from 1,000 to 1,500,000.
6. The semiconductor treatment composition according to claim 1 , further comprising an amine.
7. The semiconductor treatment composition according to claim 1 , wherein said particles comprise 30 parts by mass or more, based on 100 parts by mass of the total mass of said particles, which have a ratio (Rmax/Rmin) of the major axis (Rmax) to the minor axis (Rmin) of 1.3 or more.
8. The semiconductor treatment composition according to claim 1 , wherein said particles comprise 30 parts by mass or more, based on 100 parts by mass of the total mass of said particles, which have a ratio (Rmax/Rmin) of the major axis (Rmax) to the minor axis (Rmin) of 1.4 to 3.0.
9. A treatment method comprising:
treating a wiring board by using the semiconductor treatment composition according to claim 1 , the wiring board containing a wiring material and a barrier metal material, the wiring material being copper or tungsten, and the barrier metal material being at least one material selected from a group consisting of tantalum, titanium, cobalt, ruthenium, manganese, and compounds thereof.
10. A treatment method comprising:
treating a wiring board that contains tungsten as a wiring material by using the semiconductor treatment composition according to claim 1 , after subjecting the wiring board to chemical mechanical polishing by using a composition that contains iron ions and peroxides.
11. A semiconductor treatment composition comprising:
particles having a particle size of 0.1 to 0.3 micrometers in a number of 3×10 1 to 1.5×10 3 per mL,
wherein the particles include silica particles.
12. The semiconductor treatment composition according to claim 11 , the semiconductor treatment composition being used in a 1 to 500-fold diluted state.
13. The semiconductor treatment composition according to claim 11 , further comprising an organic acid.
14. The semiconductor treatment composition according to claim 11 , further comprising a water-soluble polymer.
15. The semiconductor treatment composition according to claim 14 , wherein the weight average molecular weight (Mw) of the water-soluble polymer is from 1,000 to 1,500,000.
16. The semiconductor treatment composition according to claim 11 , further comprising an amine.
17. The semiconductor treatment composition according to claim 11 , wherein said particles comprise 30 parts by mass or more, based on 100 parts by mass of the total mass of said particles, which have a ratio (Rmax/Rmin) of the major axis (Rmax) to the minor axis (Rmin) of 1.3 or more.
18. The semiconductor treatment composition according to claim 11 , wherein said particles comprise 30 parts by mass or more, based on 100 parts by mass of the total mass of said particles, which have a ratio (Rmax/Rmin) of the major axis (Rmax) to the minor axis (Rmin) of 1.4 to 3.0.
19. A treatment method comprising:
treating a wiring board by using the semiconductor treatment composition according to claim 11 , the wiring board containing a wiring material and a barrier metal material, the wiring material being copper or tungsten, and the barrier metal material being at least one material selected from a group consisting of tantalum, titanium, cobalt, ruthenium, manganese, and compounds thereof.
20. A treatment method comprising:
treating a wiring board that contains tungsten as a wiring material by using the semiconductor treatment composition according to claim 11 , after subjecting the wiring board to chemical mechanical polishing by using a composition that contains iron ions and peroxides.