SEMICONDUCTOR PACKAGE AND METHOD FOR PRODUCING SAME

1 . A semiconductor package having a structure wherein semiconductor chips are accommodated in cavity parts of a support which is formed by copper plating and includes the cavity parts.

2 . The semiconductor package according to claim 1 , wherein each cavity part has a height lower than each semiconductor chip to avoid interference between a semiconductor chip arrangement jig and cavity walls that form the cavity parts.

3 . The semiconductor package according to claim 1 , wherein each cavity wall that is an outer peripheral part of the semiconductor package includes a step extended toward an upper part, and the step has a height lower than each semiconductor chip to avoid interference between the semiconductor chip arrangement jig and the cavity walls.

4 . A semiconductor package including:

a support;

semiconductor chips arranged on one surface of the support via an adhesive layer, with element circuit surfaces of the semiconductor chips facing upward;

an insulating material layer that encapsulates the semiconductor chips and the periphery thereof;

in the insulating material layer, openings formed on electrodes that are placed on the element circuit surfaces of the semiconductor chips;

conductive parts formed in the openings to connect with the electrodes of the semiconductor chips;

wiring layers formed on the insulating material layer to connect with the conductive parts and partially extended to peripheral regions of the semiconductor chips; and

external electrodes formed on the wiring layers, wherein

the support is formed by a copper plated object having cavity parts that accept the semiconductor chips on the one surface, the semiconductor chips being accommodated in the respective cavity parts, and

the insulating material layer is on the other surface of the support.

5 . A method for producing a semiconductor package, including, in the following order, the steps of:

laying a copper foil on one main face of a support flat plate;

performing electroplating to form a copper plating layer on the copper foil;

performing electroplating to form cavity parts on the copper plating layer;

fixing surfaces opposite to element circuit surfaces of the semiconductor chips in the cavity parts with an adhesive;

resin-encapsulating the semiconductor chips with an insulating resin to form an encapsulation resin layer;

forming openings in the insulating material layer upon positions corresponding to electrodes arranged on the element circuit surfaces of the semiconductor chips;

forming, on the insulating material layer, wiring layers partially extended to peripheral regions of the semiconductor chips, and forming, in the openings of the insulating material layer, conductive parts connected to the electrodes of the semiconductor chips;

forming a solder resist on the wiring layer except in portions corresponding to the openings;

forming external electrodes on parts of the wiring layer corresponding to the openings;

separating the support flat plate from the copper foil; and

forming an insulating material layer on the copper foil after separation.

6 . A method for producing a semiconductor package having a support flat plate, including, in the following order, the steps of:

laying a copper foil on one main face of the support flat plate;

performing electroplating to form a copper plating layer on the copper foil;

performing electroplating to form cavity parts on the copper plating layer;

fixing surfaces opposite to element circuit surfaces of the semiconductor chips in the cavity parts with an adhesive;

resin-encapsulating the semiconductor chips with an insulating resin to form an encapsulation resin layer;

forming openings in the insulating material layer upon positions corresponding to electrodes arranged on the element circuit surfaces of the semiconductor chips;

forming, on the insulating material layer, wiring layers partially extended to peripheral regions of the semiconductor chips, and forming, in the openings of the insulating material layer, conductive parts connected to the electrodes of the semiconductor chips;

forming a solder resist on the wiring layer except in portions corresponding to the openings; and

forming external electrodes on parts of the wiring layer corresponding to the openings.

7 . The method for producing a semiconductor package according to claim 5 , wherein

the cavity parts are formed by forming parts that are not copper-plated by pattern plating using a resist.

8 . A method for producing a semiconductor package, including, in the following order, the steps of:

laying a copper foil on each of both surfaces of a support flat plate;

performing electroplating to form a copper plating layer on the copper foil;

performing electroplating to form cavity parts on the copper plating layer;

fixing surfaces opposite to element circuit surfaces of the semiconductor chips in the cavity parts with an adhesive;

resin-encapsulating the semiconductor chips with an insulating resin to form an encapsulation resin layer;

forming openings in the insulating material layer upon positions corresponding to electrodes arranged on the element circuit surfaces of the semiconductor chips;

forming, on the insulating material layer, wiring layers partially extended to peripheral regions of the semiconductor chips, and forming, in the openings of the insulating material layer, conductive parts connected to the electrodes of the semiconductor chips;

forming a solder resist on the wiring layer except in portions corresponding to the openings;

forming external electrodes on parts of the wiring layer corresponding to the openings

to form package parts on both surfaces of the support flat plate;

separating the support flat plate from the copper foils of the package parts to obtain two package parts; and

forming an insulating material layer on the copper foils of the two package parts.