Semiconductor device with FIN transistors and manufacturing method of such semiconductor device
A semiconductor device including: a first conductivity type transistor and a second conductivity type transistor, wherein each of the first conductivity type transistor and the second conductivity type includes agate insulating film formed on a base, a metal gate electrode formed on the gate insulating film, and side wall spacers formed at side walls of the metal gate electrode, wherein the gate insulating film is made of a high dielectric constant material, and wherein offset spacers are formed between the side walls of the metal gate electrode and the inner walls of the side wall spacers in any one of the first conductivity type transistor and the second conductivity type transistor, or offset spacers having different thicknesses are formed in the first conductivity type transistor and the second conductivity type transistor.
1. A semiconductor device comprising:
a semiconductor base; and
a first conductivity type transistor and a second conductivity type transistor on the semiconductor base, the second conductivity type being opposite that of the first conductivity type,
wherein,
(a) each of the first conductivity type transistor and the second conductivity type transistor includes
a high dielectric gate insulating film on the base, the high dielectric gate insulating film having a dielectric constant higher than that of silicon oxide,
a metal gate electrode on the gate insulating film, and
side wall spacers at side walls of the metal gate electrode, and
(b) each of the first conductivity type transistor and the second conductivity type transistor further includes offset spacers on the gate insulating film and between the side walls of the metal gate electrode and the side wall spacers.
2. The semiconductor device according to claim 1 , wherein each of the first conductivity type transistor and the second conductivity type transistor includes a work function layer between the gate insulating layer and the metal gate electrode.
3. The semiconductor device of claim 1 , wherein the first conductivity type transistor has raised source and drain regions that extend above a top surface of the semiconductor base.
4. The semiconductor device of claim 2 , wherein, for both the first and second conductivity transistors, the side wall spacers are at sides of both the gate insulating film and the work function layer.
5. The semiconductor device of claim 1 , wherein a cross sectional width of the metal gate electrode of the first conductivity type transistor is less than that of the second conductivity type transistor.
6. The semiconductor device of claim 1 , wherein the metal gate electrodes are made of a pure metal or an alloy of a pure metal.
7. The semiconductor device of claim 6 , wherein the metal gate electrodes are made of Ti, Al, Cu, W, or an alloy including one of the metals.
8. The semiconductor device of claim 2 , wherein the work function layer of the first conductivity type transistor is made of (a) alloy including Ru, Pd, Pt, Co, Ni, or Mo, (b) an oxide, or (c) TiN; and the work function layer of the second conductivity type transistor is made of (a) alloys including Hf, Zr, Ti, Ta, or Al, (b) a carbide, or (c) HfSi.
9. The semiconductor device of claim 1 , wherein the gate insulating layers are made of a material selected from the group consisting of HfO, HfSiO, LaO, ZrO, ZrSiO, TaO, TiO, BaSrTiO, BaTiO, StTiO, YO, AlO, and PbScTaO.
10. The semiconductor device according to claim 8 , further comprising, raised source/drain portions formed of epitaxial layers on the base directly under the side wall spacers.
11. The semiconductor device of claim 1 , wherein the first conductivity type transistor and second conductivity type transistor are buried in an interlayer insulating layer.