Devices, systems, and methods for ion trapping
Devices, methods, and systems for ion trapping are described herein. One device includes a through-silicon via (TSV) and a trench capacitor formed around the TSV.
1. A device for ion trapping, comprising:
a through-silicon (TSV), wherein forming the TSV includes:
forming a ring-shaped opening in a substrate, the opening defined by a plurality of surfaces;
forming a dielectric material on the plurality of surfaces; and
forming a conductive material on the dielectric material; and
a trench capacitor formed around the TSV.
2. The device of claim 1 , wherein the TSV has a height equal to a thickness of the substrate.
3. The device of claim 1 , wherein the trench capacitor has a height of less than the thickness of the substrate.
4. The device of claim 1 , wherein the trench capacitor has a height of approximately 65 microns.
5. The device of claim 1 , wherein the TSV has a height of between 50 and 500 microns.
6. The device of claim 1 , wherein the TSV has a height of approximately 300 microns.
7. The device of claim 1 , wherein at least one ion passes from a bottom of the ion trap to a top of the ion trap through an atom loading slot.
8. A system for ion trapping, comprising:
a substrate comprising a plurality of devices, each device comprising:
a through-silicon via (TSV), wherein forming the TSV includes:
forming a ring-shaped opening in the substrate, the opening defined by a plurality of surfaces;
forming a dielectric material on the plurality of surfaces; and
forming a conductive material on the dielectric material;
a trench capacitor formed around the TSV; and
an interposer bonded to the substrate.
9. The system of claim 8 , wherein the interposer is bonded to the substrate via a plurality of bond pads.
10. The system of claim 8 , wherein the substrate is silicon.
11. A method of forming a device for ion trapping, comprising:
forming a through-silicon via (TSV) in a substrate, wherein forming the TSV includes:
forming a ring-shaped opening in the substrate, the opening defined by a plurality of surfaces;
forming a dielectric material on the plurality of surfaces; and
forming a conductive material on the dielectric material; and
forming a trench capacitor around the TSV in the substrate.
12. The method of claim 11 , wherein forming the trench capacitor around the TSV in the substrate includes:
forming a plurality of annular openings in the substrate;
forming a dielectric material in the openings; and
forming a conductive material on the dielectric material.
13. The method of claim 11 , wherein forming the TSV includes planarizing a top surface of the substrate and a bottom surface of the substrate, wherein the conductive material and the dielectric material extend from the top of the substrate to the bottom of the substrate subsequent to planarizing the top surface of the substrate and the bottom of the substrate.
14. The method of claim 11 , wherein the dielectric material is silicon dioxide.
15. The method of claim 11 , wherein the ring-shaped opening is formed by an etching process.
16. The method of claim 11 , wherein forming the TSV includes forming an electroplated TSV.
17. The method of claim 11 , wherein formed on the substrate is a plurality of planar conductive materials, and wherein the plurality of planar conductive materials includes:
a first conductive material;
a second conductive material; and
a third conductive material.
18. The method of claim 17 , wherein each of the conductive materials are separated by a dielectric material.
19. The method of claim 17 , wherein the first conductive material forms a ground plane, the second conductive material forms a signal routing plane, and the third conductive material forms a DC electrode rail plane.
20. The method of claim 17 , wherein the conductive material is gold.