Semiconductor device and a method of fabricating the same
A semiconductor device includes a semiconductor substrate, a tunnel dielectric disposed on the semiconductor substrate, a floating gate disposed on the tunnel dielectric, a control gate disposed on the floating gate, and an insulation layer disposed between the floating gate and the control gate. The semiconductor device further includes a spacer continuously distributed on the sidewall surfaces of the floating gate and the control gate, and the spacer overlaps portions of the top surface of the floating gate.
1. A semiconductor device, comprising:
a semiconductor substrate having an upper surface;
a tunnel dielectric, disposed on the upper surface of the semiconductor substrate; a floating gate, disposed on the tunnel dielectric, wherein the floating gate comprises a top surface and a sidewall surface;
a control gate, disposed on the floating gate, wherein the control gate comprises a sidewall surface;
an insulation layer, disposed between the floating gate and the control gate; and
a spacer, continuously distributed on the sidewall surfaces of the floating gate and the control gate,
wherein a side surface of the spacer comprises a recess filled with a dielectric layer,
wherein, when the upper surface of the substrate is horizontally oriented, the spacer overlaps portions of the top surface of the floating gate, and a totality of the recess filled with the dielectric layer is laterally above a totality of the floating gate.
2. The semiconductor substrate of claim 1 , wherein the floating gate and the control gate respectively comprise a width, the widths are parallel to an orientation, the width of the floating gate is greater than the width of the control gate.
3. The semiconductor substrate of claim 1 , wherein the top surface and the sidewall surface of the floating gate are completely covered with the insulation layer.
4. The semiconductor substrate of claim 1 , wherein the insulation layer is disposed between the semiconductor substrate and the spacer.
5. The semiconductor substrate of claim 1 , wherein portions of the surface of the spacer are exposed from the dielectric layer.
6. The semiconductor substrate of claim 1 , wherein the semiconductor substrate comprises a cell region and a peripheral region, the tunnel dielectric, the floating gate, the control gate, the insulation layer, the spacer and the dielectric layer are disposed in the cell region, the dielectric layer is further disposed in the peripheral region, the semiconductor device further comprises:
a resistor structure, disposed in the peripheral region, wherein the resistor structure comprises a top surface and a sidewall surface, the top surface and the sidewall surface of the resistor structure are covered with the dielectric layer.
7. The semiconductor substrate of claim 1 , wherein the semiconductor substrate comprises a cell region and a peripheral region, the tunnel dielectric, the floating gate, the control gate, the insulation layer and the spacer are disposed in the cell region, the insulation layer is further disposed in the peripheral region, the semiconductor device further comprises:
a gate structure, disposed in the peripheral region, wherein a sidewall surface of the gate structure is covered with the insulation layer; and
a resistor structure, disposed in the peripheral region, wherein a sidewall surface of the resistor structure is covered with the insulation layer.