IP Library Patent Application 15591163
Patent Application
App. No. 15/591,163

Separation Grid for Plasma Chamber

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Quick Facts
Patent No.
US None
App. No.
15/591,163
Abstract

Separation grids for plasma processing apparatus are provided. In some embodiments, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a processing chamber. The processing chamber can be separated from the plasma chamber. The apparatus can include a separation grid. The separation grid can separate the plasma chamber and the processing chamber. The apparatus can include a temperature control system. The temperature control system can be configured to regulate the temperature of the separation grid to affect a uniformity of a plasma process on a substrate. In some embodiments, a separation grid can have a varying thickness profile across a cross-section of the separation grid to affect a flow of neutral species through the separation grid.

Claims (50)

1 . A plasma processing apparatus, comprising:

a plasma chamber;

a processing chamber separated from the plasma chamber;

a separation grid separating the plasma chamber and the processing chamber;

a temperature control system configured to regulate the temperature of the separation grid to affect the uniformity of a plasma process on a substrate.

2 . The plasma processing apparatus of claim 1 , wherein the temperature control system comprises one or more temperature control units embedded in the separation grid.

3 . The plasma processing apparatus of claim 2 , wherein the temperature control units comprise one or more heating elements.

4 . The plasma processing apparatus of claim 3 , wherein the temperature control system comprises:

one or more controllers; and

one or more temperature sensors configured to generate a signal indicative of a temperature of the separation grid;

wherein the one or more controllers are configured to control an electrical current provided to the one or more heating elements based at least in part on the signal indicative of the temperature of the separation grid.

5 . The plasma processing apparatus of claim 2 , wherein the temperature control units comprise:

one or more first heating elements disposed in a first zone of the separation grid;

one or more second heating elements disposed in a second zone of the separation grid.

6 . The plasma processing apparatus of claim 5 , wherein the temperature control system is configured to independently control the one or more first heating elements relative to the one or more second heating elements.

7 . The plasma processing apparatus of claim 2 , wherein the temperature control units comprise one or more fluid channels.

8 . The plasma processing apparatus of claim 7 , wherein the temperature control system comprises:

one or more controllers; and

one or more temperature sensors configured to generate a signal indicative of a temperature of the separation grid;

wherein the one or more controllers are configured to control the flow of fluid provided to the one or more fluid channels based at least in part on the signal indicative of the temperature of the separation grid.

9 . The plasma processing apparatus of claim 8 , wherein the temperature control units comprise:

one or more first fluid channels disposed in a first zone of the separation grid;

one or more second fluid channels disposed in a second zone of the separation grid.

10 . The plasma processing apparatus of claim 9 , wherein the temperature control system is configured to independently control the flow of fluid through the one or more first fluid channels relative to the one or more second fluid channels.

11 . A separation grid for a plasma processing apparatus, the separation grid comprising:

a top surface;

a bottom surface;

one or more holes to allow the passage of neutral species; and

one or more temperature control units embedded in the separation grid.

12 . The separation grid of claim 11 , wherein the one or more temperature control units comprise one or more heating elements.

13 . The separation grid of claim 12 , wherein the temperature control units comprise:

one or more first heating elements disposed in a first zone of the separation grid;

one or more second heating elements disposed in a second zone of the separation grid.

14 . The separation grid of claim 11 , wherein the one or more temperature control units comprise one or more fluid channels.

15 . The separation grid of claim 14 , wherein the temperature control units comprise:

one or more first fluid channels disposed in a first zone of the separation grid;

one or more second fluid channels disposed in a second zone of the separation grid.

16 . A separation grid for separating a plasma chamber from a processing chamber in a plasma processing apparatus, the separation grid comprising:

a top surface;

a bottom surface; and

one or more holes to allow the passage of neutral species;

wherein the separation grid has a varying thickness profile across a cross-section of the separation grid to affect a flow of neutral species through the separation grid.

17 . The separation grid of acclaim 16 , wherein the separation grid has a top surface with a continuously convex profile or a continuously concave profile and a bottom surface with a generally flat profile.

18 . The separation grid of claim 16 , wherein the separation grid has a top surface with a generally flat profile and a bottom surface with a generally convex profile or a continuously concave profile.

19 . The separation grid of claim 16 , wherein the separation grid has a top surface with sloped peripheral edges and a bottom surface with a generally flat profile.

20 . The separation grid of claim 16 , wherein the separation grid has a stepped top surface and a bottom surface with a generally flat profile.

21 . The separation grid of claim 16 , wherein a central portion of the separation grid has a first thickness and a peripheral portion the separation grid has a second thickness, the first thickness being different from the second thickness.

22 . The separation grid of claim 21 , wherein the first thickness is greater than the second thickness.

23 . The separation grid of claim 16 , wherein the separation grid is a dual grid, at least one plate of the dual grid having a varying thickness profile across a cross-section of the plate.

24 . The separation grid of claim 23 , wherein the separation grid comprises a top plate and a bottom plate, the top plate having a varying thickness profile that mirrors a varying thickness profile of the bottom plate.

Assignments (4)
RELEASE OF SECURITY INTEREST Recorded Apr 15, 2021
From: EAST WEST BANK
To: MATTSON TECHNOLOGY, INC.
Reel/Frame 055950/0452 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 30, 2019
From: MATTSON TECHNOLOGY, INC.
To: MATTSON TECHNOLOGY, INC.; BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY, CO., LTD
Reel/Frame 050582/0796 →
SECURITY INTEREST Recorded Aug 27, 2018
From: MATTSON TECHNOLOGY, INC.
To: EAST WEST BANK
Reel/Frame 046956/0348 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 10, 2017
From: VANIAPURA, VIJAY M.; MA, SHAWMING; NAGORNY, VLADIMIR; PAKULSKI, RYAN M.
To: MATTSON TECHNOLOGY, INC.
Reel/Frame 042318/0509 →