Vanadium dioxide heterostructures having an isostructural metal-insulator transition
Heterostructures that include a bilayer composed of epitaxial layers of vanadium dioxide having different rutile-to-monoclinic phase transition temperatures are provided. Also provided are electrical switches that incorporate the heterostructures. The bilayers are characterized in that they undergo a single-step, collective, metal-insulator transition at an electronic transition temperature. At temperatures below the electronic transition temperature, the layer of vanadium dioxide having the higher rutile-to-monoclinic phase transition temperature has an insulating monoclinic crystalline phase, which is converted to a metallic monoclinic crystalline phase at temperatures above the electronic transition temperature.
1. A bilayer comprising:
a first layer of vanadium dioxide characterized in that it undergoes a rutile-to-monoclinic structural phase transition at a first structural transition temperature; and
a second layer of vanadium dioxide adjacent to the first layer of vanadium dioxide, the second layer of vanadium dioxide characterized in that it undergoes a rutile-to-monoclinic structural phase transition at a second structural transition temperature that is higher than the first structural transition temperature, wherein the second layer of vanadium dioxide has a stable metallic monoclinic phase at a temperature between the first structural transition temperature and the second structural transition temperature.
2. The bilayer of claim 1 , wherein the first structural transition temperature and the second structural transition temperate are in the range from 275 K to 290 K and the first structural transition temperature is at least 5 K lower than the second structural transition temperature.
3. The bilayer of claim 1 , wherein the second layer of vanadium dioxide has a thickness of less than 10 nm.
4. The bilayer of claim 1 , having a single-step metal-insulator electronic transition temperature in the range from 275 K to 285 K.
5. The bilayer of claim 1 , wherein the first layer of vanadium dioxide comprises extrinsically doped vanadium dioxide and the second layer of vanadium dioxide comprises stoichiometric VO 2 .
6. The bilayer of claim 5 , wherein the extrinsically doped vanadium dioxide is tungsten doped vanadium dioxide.
7. The bilayer of claim 1 , wherein the first layer of vanadium dioxide comprises non-stoichiometric, oxygen-deficient VO 2−δ , where δ represents a quantity of oxygen vacancies, and the second layer of vanadium dioxide comprises stoichiometric VO 2 .
8. The bilayer of claim 1 , wherein first layer of vanadium dioxide has a thickness of less than 10 nm and the second layer of vanadium dioxide has a thickness of less than 10 nm.
9. The bilayer of claim 1 , wherein the bilayer is a heterostructure consisting only of the first and second layers of vanadium dioxide.
10. A method of inducing a single-step metal-insulator electronic transition in a bilayer comprising:
a first layer of vanadium dioxide characterized in that it undergoes a rutile-to-monoclinic structural phase transition at a first structural transition temperature; and
a second layer of vanadium dioxide adjacent to the first layer of vanadium dioxide, the second layer of vanadium dioxide characterized in that it undergoes a rutile-to-monoclinic structural phase transition at a second structural transition temperature that is higher than the first structural transition temperature, wherein the second layer of vanadium dioxide has a stable metallic monoclinic phase at a temperature between the first structural transition temperature and the second structural transition temperature, the method comprising:
maintaining the bilayer at a temperature above the first structural transition temperature; and
applying an external stimulus to the bilayer, wherein the external stimulus induces the second layer of vanadium dioxide to undergo an isostructural electronic phase transition from an electrically insulating monoclinic crystalline phase to an electrically conducting monoclinic crystalline phase.
11. The method of claim 10 , wherein applying an external stimulus to the bilayer comprises applying a voltage across the bilayer.
12. The method of claim 10 , wherein applying an external stimulus to the bilayer comprises heating the bilayer.
13. An electrical switching device comprising:
a bilayer comprising:
a first layer of vanadium dioxide characterized in that it undergoes a rutile-to-monoclinic structural phase transition at a first structural transition temperature; and
a second layer of vanadium dioxide adjacent to the first layer of vanadium dioxide, the second layer of vanadium dioxide characterized in that it undergoes a rutile-to-monoclinic structural phase transition at a second structural transition temperature that is higher than the first structural transition temperature, wherein the second layer of vanadium dioxide has a stable metallic monoclinic phase at a temperature between the first structural transition temperature and the second structural transition temperature;
a first electrically conducting contact in electrical communication with a first area of the bilayer;
a second electrically conducting contact in electrical communication with a second area of the bilayer; and
an external stimulus source configured to apply a metal-insulator transition-inducing external stimulus to the bilayer.
14. The switching device of claim 13 , wherein the external stimulus source is a voltage source configured to apply a voltage across the bilayer.
15. The switching device of claim 13 , wherein the switching device is a capacitor in which the second layer of vanadium dioxide is disposed between the first layer of vanadium dioxide and a third layer of vanadium dioxide, the third layer of vanadium dioxide characterized in that it undergoes a rutile-to-monoclinic structural phase transition at a third structural transition temperature that is lower than the second structural transition temperature, and further wherein the first electrically conducting contact is in electrical communication with the first layer of vanadium dioxide and the second electrically conducting contact is in electrical communication with the third layer of vanadium dioxide.
16. The switching device of claim 13 , wherein the switching device is a field-effect switch comprising:
a source in electrical communication with the first electrically conducting contact;
a drain in electrical communication with the second electrically conducting contact, wherein the source and drain are configured to be in electrical communication through the second layer of vanadium dioxide when the field effect switch is on; and
a gate stack comprising: a gate dielectric on the second layer of vanadium dioxide and a gate contact on the gate dielectric.
17. A method of switching a current using the switching device comprising:
a bilayer comprising:
a first layer of vanadium dioxide characterized in that it undergoes a rutile-to-monoclinic structural phase transition at a first structural transition temperature; and
a second layer of vanadium dioxide adjacent to the first layer of vanadium dioxide, the second layer of vanadium dioxide characterized in that it undergoes a rutile-to-monoclinic structural phase transition at a second structural transition temperature that is higher than the first structural transition temperature, wherein the second layer of vanadium dioxide has a stable metallic monoclinic phase at a temperature between the first structural transition temperature and the second structural transition temperature;
a first electrically conducting contact in electrical communication with a first area of the bilayer;
a second electrically conducting contact in electrical communication with a second area of the bilayer; and
an external stimulus source configured to apply a metal-insulator transition-inducing external stimulus to the bilayer, the method comprising;
maintaining the bilayer at a temperature above the first structural transition temperature;
applying an external stimulus from the external stimulus source to the bilayer, wherein the external stimulus induces the second layer of vanadium dioxide to undergo an isostructural electronic phase transition from an electrically insulating monoclinic crystalline phase to an electrically conducting monoclinic crystalline phase; and
passing a current from the first electrically conducting contact to the second electrically conducting contact, through the bilayer.
18. A method of switching a capacitor comprising:
a bilayer comprising:
a first layer of vanadium dioxide characterized in that it undergoes a rutile-to-monoclinic structural phase transition at a first structural transition temperature; and
a second layer of vanadium dioxide adjacent to the first layer of vanadium dioxide, the second layer of vanadium dioxide characterized in that it undergoes a rutile-to-monoclinic structural phase transition at a second structural transition temperature that is higher than the first structural transition temperature, wherein the second layer of vanadium dioxide has a stable metallic monoclinic phase at a temperature between the first structural transition temperature and the second structural transition temperature;
a third layer of vanadium dioxide, wherein the second layer of vanadium dioxide is disposed between the first layer of vanadium dioxide and the third layer of vanadium dioxide and the third layer of vanadium dioxide characterized in that it undergoes a rutile-to-monoclinic structural phase transition at a third structural transition temperature that is lower than the second structural transition temperature;
a first electrically conducting contact in electrical communication with the first layer of vanadium dioxide;
a second electrically conducting contact in electrical communication with the third layer of vanadium dioxide; and
an external stimulus source configured to apply a metal-insulator transition-inducing external stimulus to the bilayer, the method comprising:
maintaining the capacitor at a temperature above the first and third structural transition temperatures;
charging the first layer of vanadium dioxide and the third layer of vanadium dioxide when the second layer of vanadium dioxide is an electrically insulating state; and
applying an external stimulus from the external stimulus source to the capacitor, wherein the external stimulus induces the second layer of vanadium dioxide to undergo an isostructural electronic phase transition from an electrically insulating monoclinic crystalline phase to an electrically conducting monoclinic crystalline phase, whereby the first and third layers of vanadium dioxide are discharged through the second layer of vanadium dioxide.
19. A method of switching a current using a field effect switch comprising:
a bilayer comprising:
a first layer of vanadium dioxide characterized in that it undergoes a rutile-to-monoclinic structural phase transition at a first structural transition temperature; and
a second layer of vanadium dioxide adjacent to the first layer of vanadium dioxide, the second layer of vanadium dioxide characterized in that it undergoes a rutile-to-monoclinic structural phase transition at a second structural transition temperature that is higher than the first structural transition temperature, wherein the second layer of vanadium dioxide has a stable metallic monoclinic phase at a temperature between the first structural transition temperature and the second structural transition temperature;
a first electrically conducting contact in electrical communication with a first area of the bilayer;
a second electrically conducting contact in electrical communication with a second area of the bilayer;
an external stimulus source configured to apply a metal-insulator transition-inducing external stimulus to the bilayer;
a source in electrical communication with the first electrically conducting contact;
a drain in electrical communication with the second electrically conducting contact, wherein the source and drain are configured to be in electrical communication through the second layer of vanadium dioxide when the field effect switch is on; and
a gate stack comprising: a gate dielectric on the second layer of vanadium dioxide and a gate contact on the gate dielectric, the method comprising:
maintaining the bilayer at a temperature above the first structural transition temperature;
applying a gate voltage from the external voltage source to the gate contact, wherein the gate voltage induces the second layer of vanadium dioxide to undergo an isostructural electronic phase transition from an electrically insulating monoclinic crystalline phase to an electrically conducting monoclinic crystalline phase; and
passing a current from the first electrically conducting contact to the second electrically conducting contact, through the second layer of vanadium dioxide.