Manufacturing method for compound semiconductor device
A support substrate is bonded to a GaN epitaxial substrate including at least an electron transport layer and an electron supply layer grown on a growth substrate in the Ga-polar direction such that the support substrate faces the Ga-plane of the GaN epitaxial substrate. Furthermore, at least the growth substrate is removed from the GaN epitaxial substrate so as to expose an N-plane of the GaN epitaxial substrate. Subsequently, a semiconductor element is formed on the N-plane side.
1. A manufacturing method for a compound semiconductor device, wherein a semiconductor element is formed on an N-plane side of a GaN epitaxial substrate grown in a Ga-polar direction,
wherein the GaN epitaxial substrate has a multilayer structure in which an n-type conductive layer, a first GaN layer that functions as an electron transport layer, an electron supply layer, and a second GaN layer are multilayered in this order in the Ga-polar direction.
2. The manufacturing method according to claim 1 , wherein a support substrate is bonded to the GaN epitaxial substrate such that the support substrate faces a Ga-plane of the GaN epitaxial substrate.
3. The manufacturing method according to claim 1 , wherein the N-plane of the GaN epitaxial substrate is exposed by removing a growth substrate that functions as a base when the GaN epitaxial substrate is formed by means of crystal growth and a buffer layer formed on the growth substrate.
4. A manufacturing method for a compound semiconductor device, wherein a semiconductor element is formed on an N-plane side of a GaN epitaxial substrate grown in a Ga-polar direction, wherein the GaN epitaxial substrate has a multilayer structure in which an n-type conductive layer that functions as a contact layer, a GaN layer that functions as an electron transport layer, and an electron supply layer are multilayered in this order in the Ga-polar direction.
5. A manufacturing method for a compound semiconductor device comprising:
bonding a support substrate to a GaN epitaxial substrate, wherein the GaN epitaxial substrate has a multilayer structure in which at least a growth substrate, an electron transport layer and an electron supply layer are multilayered in this order in a Ga-polar direction, and wherein the support substrate faces a Ga-plane of the GaN epitaxial substrate;
removing at least the growth substrate from the GaN epitaxial substrate so as to expose an N-plane of the GaN epitaxial substrate; and
forming a semiconductor element on the N-plane side.
6. The manufacturing method according to claim 5 , wherein the GaN epitaxial substrate comprises the growth substrate, a buffer layer, an n-type conductive layer, a first GaN layer that functions as the electron transport layer, the electron supply layer, and a second GaN layer.
7. The manufacturing method according to claim 6 , wherein, in order to expose the N-plane, the growth substrate and the buffer layer are removed.
8. The manufacturing method according to claim 5 , wherein the growth substrate is configured as a Si substrate.
9. The manufacturing method according to claim 5 , wherein the growth substrate is removed by means of at least one from among grinding and wet etching.
10. The manufacturing method according to claim 6 , wherein the buffer layer is removed by means of dry etching.
11. The manufacturing method according to claim 5 , wherein the support substrate comprises at least one from among a flexible substrate, an AIN substrate, a SiC substrate, a graphite substrate, a Cu substrate, and a Si substrate.