Substrate processing apparatus
There is provided a technique that includes: loading substrates into a process chamber and mounting the substrates on a substrate mounting stand, which is installed in the process chamber, along a circumferential direction; maintaining the substrate mounting stand at a substrate processing position; processing the substrates on the substrate mounting stand, which is maintained at the substrate processing position, by supplying a first gas and a second gas from a first gas supply unit and a second gas supply unit, respectively, arranged above the substrate mounting stand while rotating the substrate mounting stand; unloading the substrates from the process chamber; maintaining the substrate mounting stand at a cleaning position; and cleaning the substrate mounting stand, which is maintained at the cleaning position, by supplying a cleaning gas from a third gas supply unit arranged above the substrate mounting stand, wherein the cleaning position is lower than the substrate processing position.
1. A method for manufacturing a semiconductor device, comprising:
loading a plurality of substrates into a process chamber and mounting the plurality of substrates on a substrate mounting stand, which is installed in the process chamber, along a circumferential direction;
maintaining the substrate mounting stand at a substrate processing position;
processing the plurality of substrates on the substrate mounting stand, which is maintained at the substrate processing position, by supplying a first gas and a second gas from a first gas supply unit and a second gas supply unit, respectively, arranged above the substrate mounting stand while rotating the substrate mounting stand;
unloading the plurality of substrates from the process chamber;
maintaining the substrate mounting stand at a cleaning position; and
cleaning the substrate mounting stand, which is maintained at the cleaning position, by supplying a cleaning gas from a third gas supply unit arranged above the substrate mounting stand,
wherein the cleaning position is lower than the substrate processing position.
2. The method of claim 1 , wherein a distance between a surface of the substrate mounting stand at the substrate processing position and a convex member protruding from a ceiling of the process chamber is shorter than a distance between the surface of the substrate mounting stand at the cleaning position and the convex member protruding from the ceiling of the process chamber.
3. The method of claim 2 , wherein the convex member is any of the first gas supply unit, the second gas supply unit, and the third gas supply unit.
4. The method of claim 1 , wherein a distance between a surface of the substrate mounting stand at the substrate processing position and a ceiling of the process chamber is shorter than a distance between the surface of the substrate mounting stand at the cleaning position and the ceiling of the process chamber.
5. The method of claim 1 , wherein the third gas supply unit is configured to supply an inert gas into the process chamber while the substrate mounting stand is maintained at the substrate processing position, and is further configured to supply the cleaning gas into the process chamber while the substrate mounting stand is maintained at the cleaning position.
6. The method of claim 2 , wherein the third gas supply unit is configured to supply an inert gas into the process chamber while the substrate mounting stand is maintained at the substrate processing position, and is further configured to supply the cleaning gas into the process chamber while the substrate mounting stand is maintained at the cleaning position.
7. The method of claim 3 , wherein the third gas supply unit is configured to supply an inert gas into the process chamber while the substrate mounting stand is maintained at the substrate processing position, and is further configured to supply the cleaning gas into the process chamber while the substrate mounting stand is maintained at the cleaning position.
8. The method of claim 4 , wherein the third gas supply unit is configured to supply an inert gas into the process chamber while the substrate mounting stand is maintained at the substrate processing position, and is further configured to supply the cleaning gas into the process chamber while the substrate mounting stand is maintained at the cleaning position.
9. The method of claim 1 , wherein an inert gas is supplied from one or both of the first gas supply unit and the second gas supply unit while the cleaning gas is supplied from the third gas supply unit.
10. The method of claim 2 , wherein an inert gas is supplied from one or both of the first gas supply unit and the second gas supply unit while the cleaning gas is supplied from the third gas supply unit.
11. The method of claim 3 , wherein an inert gas is supplied from one or both of the first gas supply unit and the second gas supply unit while the cleaning gas is supplied from the third gas supply unit.
12. The method of claim 4 , wherein an inert gas is supplied from one or both of the first gas supply unit and the second gas supply unit while the cleaning gas is supplied from the third gas supply unit.
13. The method of claim 5 , wherein the inert gas is supplied from one or both of the first gas supply unit and the second gas supply unit while the cleaning gas is supplied from the third gas supply unit.