LANTHANATED TUNGSTEN ION SOURCE AND BEAMLINE COMPONENTS
An ion implantation system is provided having one or more conductive components comprised of one or more of lanthanated tungsten and a refractory metal alloyed with a predetermined percentage of a rare earth metal. The conductive component may be a component of an ion source, such as one or more of a cathode, cathode shield, a repeller, a liner, an aperture plate, an arc chamber body, and a strike plate. The aperture plate may be associated with one or more of an extraction aperture, a suppression aperture and a ground aperture.
1 . A conductive component for an ion implantation system, wherein the conductive component is comprised of one or more of lanthanated tungsten and a refractory metal alloyed with a predetermined percentage of a rare earth metal, and wherein the conductive component is generally passivated during operation of the ion implantation system.
2 . The conductive component of claim 1 , wherein the conductive component is a component of an ion source.
3 . The conductive component of claim 2 , wherein the conductive component comprises one or more of a cathode, cathode shield, a repeller, a liner, an aperture plate, an arc chamber body, and a strike plate.
4 . The conductive component of claim 3 , wherein the liner comprises an ion source liner.
5 . The conductive component of claim 3 , wherein the aperture plate is associated with one or more of an extraction aperture, a suppression aperture and a ground aperture.
6 . The conductive component of claim 3 , wherein the conductive component comprises between 1% and 3% lanthanum.
7 . An ion implantation system comprising a conductive component, wherein the conductive component is comprised of one or more of lanthanated tungsten and a refractory metal alloyed with a predetermined percentage of a rare earth metal.
8 . The ion implantation system of claim 7 , wherein the conductive component comprises one or more of a cathode, cathode shield, a repeller, a liner, an aperture plate, an arc chamber body, and a strike plate.
9 . The ion implantation system of claim 8 , wherein the liner comprises an ion source liner.
10 . The ion implantation system of claim 8 , wherein the aperture plate is associated with one or more of an extraction aperture, a suppression aperture and a ground aperture.
11 . The ion implantation system of claim 7 , wherein the conductive component is positioned upstream of a mass analyzer.
12 . The ion implantation system of claim 7 , wherein the conductive component is generally passivated during operation of the ion implantation system.
13 . The ion implantation system of claim 7 , wherein the conductive component comprises between 1% and 3% lanthanum.