IP Library › Granted Patent US 10,480,093
Granted Patent B2
US 10,480,093 · App. 15/593,873 · Granted Nov 19, 2019

Sealing process for an anodized aluminum-alloy surface

Inventors: Bart Antonie van Hassel (Weatogue, CT); Georgios S. Zafiris (Glastonbury, CT); Zhongfen Ding (South Windsor, CT); Michael A. Kryzman (West Hartford, CT); Mark R. Jaworowski (Glastonbury, CT); Weina Li (South Glastonbury, CT); Blair A. Smith (South Windsor, CT); Weilong Zhang (Glastonbury, CT); Promila Bhaatia (Farmington, CT)
Assignee: UNITED TECHNOLOGIES CORPORATION
C25D11/246C23C22/73C23C22/83C23C28/048C23C2222/10
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Quick Facts
Patent No.
US 10,480,093
App. No.
15/593,873
Granted
Nov 19, 2019
Kind
B2
Abstract

A sealing process includes applying a first reactant to a substrate having a porous structure, the first reactant comprising a chromium (III) precursor and a transition metal precursor and applying a second reactant to the first reactant, the second reactant comprising a rare earth element precursor and an alkaline earth element precursor to form reservoirs of trivalent chromium in pore space of the porous structure, and a physical barrier over the substrate and the reservoirs.

Claims (19)

1. A sealing process, comprising:

applying a first reactant to a substrate having a porous structure, the first reactant comprising at least one of a trivalent chromium precursor and a transition metal precursor; wherein the substrate is an anodized aluminum-alloy surface with a barrier oxide film; and

applying a second reactant to the first reactant in the porous structure, where the second reactant comprises a rare earth element precursor and an alkaline earth element precursor; and

reacting the first reactant with the second reactant to produce a physical barrier over the substrate; where the physical barrier seals the porous structure to form reservoirs that contain the trivalent chromium precursor.

2. The process as recited in claim 1 , wherein the trivalent chromium precursor includes at least one of a chromium (III) nitrate, and a chromium (III) sulfate.

3. The process as recited in claim 1 , wherein the transition metal precursor includes a precursor of at least one of zirconium and titanium.

4. The process as recited in claim 1 , wherein the rare earth element precursor includes at least one of cerium (Ce), dysprosium (Dy), erbium (Er), europium (Eu), gadolinium (Gd), holmium (Ho), lanthanum (La), lutetium (Lu), neodymium (Nd), praseodymium (Pr), promethium (Pm), samarium (Sm), scandium (Sc), terbium (Tb), thulium (Tm), ytterbium (Yb) and yttrium (Y) and the alkaline earth element precursor includes at least one of magnesium (Mg), calcium (Ca), strontium (Sr), and barium (Ba).

5. The process as recited in claim 1 , wherein the physical barrier is formed at a surface of the substrate.

6. The process as recited in claim 1 , wherein the physical barrier is formed within a pore space of the porous structure.

7. The process as recited in claim 1 , wherein the physical barrier includes a compound with the composition RECrO 3 , where RE is a trivalent rare earth cation that is selected from the group consisting of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium, or its Ca 2+ , Sr 2+ and Al 3+ doped forms.

8. The process as recited in claim 7 , wherein the physical barrier comprises a doped perovskite or pyrochlore crystalline structure.

9. The process as recited in claim 1 , wherein the physical barrier comprises a crystalline structure that comprises chromium, a transition metal element, a rare earth element, and an alkaline earth element.

10. The process as recited in claim 9 , further comprising crystallizing the compound into a pyrochlore structure.

11. The process as recited in claim 1 , wherein the first reactant and the second reactant forms a compound with the composition La 2 Zr 2 O 7 that crystallizes into a pyrochlore crystal structure.

12. The process as recited in claim 11 , wherein the compound contains Al 3+ by interacting with a hydrated form of aluminum oxide on pore walls of the porous structure.

13. The process as recited in claim 1 , further comprising a dopant in the first reactant.

14. The process as recited in claim 13 , wherein the dopant includes Ca 2+ and Sr 2+ precursors.

15. The process as recited in claim 11 , wherein the second reactant includes rare earth element precursor.

16. The process as recited in claim 15 , wherein a trivalent rare earth cation of the rare earth element precursor includes at least one of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, or lutetium, or its Ca 2+ , Sr 2+ and Al 3+ doped forms.

Assignments (4)
CHANGE OF NAME Recorded Jul 27, 2023
From: RAYTHEON TECHNOLOGIES CORPORATION
To: RTX CORPORATION
Reel/Frame 064714/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE AND REMOVE PATENT APPLICATION NUMBER 11886281 AND ADD PATENT APPLICATION NUMBER 14846874. TO CORRECT THE RECEIVING PARTY ADDRESS PREVIOUSLY RECORDED AT REEL: 054062 FRAME: 0001. ASSIGNOR(S) HEREBY CONFIRMS THE CHANGE OF ADDRESS. Recorded Mar 4, 2021
From: UNITED TECHNOLOGIES CORPORATION
To: RAYTHEON TECHNOLOGIES CORPORATION
Reel/Frame 055659/0001 →
CHANGE OF NAME Recorded Sep 4, 2020
From: UNITED TECHNOLOGIES CORPORATION
To: RAYTHEON TECHNOLOGIES CORPORATION
Reel/Frame 054062/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 12, 2017
From: VAN HASSEL, BART ANTONIE; ZAFIRIS, GEORGIOS S.; DING, ZHONGFEN; KRYZMAN, MICHAEL A.; JAWOROWSKI, MARK R.; LI, WEINA; SMITH, BLAIR A.; ZHANG, WEILONG; BHAATIA, PROMILA
To: UNITED TECHNOLOGIES CORPORATION
Reel/Frame 042356/0316 →
Continuity (1)
Related Publication 20180327926A1 · Nov 15, 2018
Cited By (2)
US 12,404,590 US 12,522,939