Temperature-tuned substrate support for substrate processing systems
A system for controlling a temperature of a substrate during treatment in a substrate processing system includes a substrate support defining a center zone and a radially-outer zone. The substrate is arranged over both the center zone and the radially-outer zone during treatment. A first heater is configured to heat the center zone. A second heater is configured to heat the radially-outer zone. A first heat sink has one end in thermal communication with the center zone. A second heat sink has one end in thermal communication with the radially-outer zone. A temperature difference between the center zone and the radially-outer zone is greater than 10° C. during the treatment.
1. A system for controlling a temperature of a substrate during treatment in a substrate processing system, comprising:
a substrate support defining a center zone and a radially-outer zone,
wherein the substrate is arranged over both the center zone and the radially-outer zone during treatment;
a first heater configured to heat the center zone;
a second heater configured to heat the radially-outer zone;
a first heat sink including axially extending projections, the axially extending projections conducting heat, and having one end in thermal communication with the center zone; and
a second heat sink having an annular portion and having one end in thermal communication with the radially-outer zone,
wherein a temperature difference between the center zone and the radially-outer zone is greater than 10° C. during the treatment.
2. The system of claim 1 , wherein the substrate is held by gravity on the substrate support and is not held by mechanical clamping or an electrostatic chuck.
3. The system of claim 1 , wherein the substrate support includes:
a first component including:
a first center portion having a first thickness; and
a radially-projecting portion having a second thickness that is less than the first thickness;
a second component arranged below and radially outside of the first component and including:
a second center portion; and
an axially-projecting portion that is connected to the second center portion of the second component and to a radially-outer edge of the radially-projecting portion of the first component.
4. The system of claim 3 , wherein a first gap is defined in an axial direction between the first center portion of the first component and the second center portion of the second component, and wherein a second gap is defined between a radially-outer surface of the first center portion and a radially-inner surface of the axially-projecting portion.
5. The system of claim 3 , wherein an upper surface of the first center portion at least partially defines the center zone, wherein an upper surface of the axially-projecting portion at least partially defines the radially-outer zone.
6. The system of claim 3 , wherein:
the second component includes a plurality of bores; and
the axially extending projections are connected to the first component and pass through the plurality of bores.
7. The system of claim 1 , further comprising a plurality of spacers arranged in the substrate support to provide a predetermined gap between the substrate and the substrate support during treatment.
8. The system of claim 1 , wherein the substrate support includes a plurality of notches that are defined in the center zone and the radially-outer zone and that extend radially inwardly from an outer edge of the substrate support.
9. The system of claim 1 , further comprising a temperature-controlled thermal mass in thermal communication with other ends of the first heat sink and the second heat sink.
10. The system of claim 1 , wherein at least one of the center zone and the radially-outer zone is maintained at a temperature in a range from 90° C. to 350° C. and wherein the temperature difference is in a range from 18° C. to 100° C.
11. The system of claim 1 , wherein the treatment comprises photoresist ashing, at least one of the center zone and the radially-outer zone is maintained at a temperature in a range from 90° C. to 350° C. and wherein the temperature difference is in a range from 18° C. to 100° C.
12. The system of claim 1 wherein the axially extending projections extend from the center zone.
13. A system for controlling a temperature of a substrate during treatment in a substrate processing system, comprising:
a substrate support including:
a first component including:
a center portion having a first thickness and partially defining a center zone; and
a radially-projecting portion having a second thickness that is less than the first thickness; and
a second component arranged below and radially outside of the first component and including:
an annular portion; and
an axially-projecting portion that is connected to the annular portion of the second component and a radially-outer edge of the radially-projecting portion of the first component and that partially defines a radially-outer zone, wherein the substrate is arranged over both the center zone and the radially-outer zone during treatment;
a first heater configured to heat the first component;
a second heater configured to heat the second component;
a first heat sink including axially extending projections, the axially extending projections conducting heat, and having one end in thermal communication with the first component; and
a second heat sink having one end in thermal communication with the second component,
wherein a temperature difference between the first component and the second component is in a range from 10° C. to 100° C. during the treatment.
14. The system of claim 13 , wherein the substrate is held by gravity on the substrate support and is not held by mechanical clamping or an electrostatic chuck.
15. The system of claim 13 , wherein an upper surface of the center portion corresponds to the center zone, and wherein an upper surface of the axially-projecting portion corresponds to the radially-outer zone.
16. The system of claim 13 , wherein:
the second component includes a plurality of bores; and
the axially extending projections are connected to the first component and pass through the plurality of bores.
17. The system of claim 13 , further comprising a plurality of spacers arranged in the center zone to provide a predetermined gap between the substrate and the substrate support during treatment.
18. The system of claim 13 , wherein the substrate support includes a plurality of notches projecting radially inwardly from an outer edge of the substrate support.
19. The system of claim 13 , further comprising a temperature-controlled thermal mass in thermal communication with other ends of the first heat sink and the second heat sink.
20. The system of claim 13 , wherein at least one of the center zone and the radially-outer zone is maintained at a temperature in a range from 90° C. to 350° C. and wherein the temperature difference is in a range from 18° C. to 100° C.
21. The system of claim 13 , wherein the treatment comprises photoresist ashing, at least one of the center zone and the radially-outer zone is maintained at a temperature in a range from 90° C. to 350° C. and wherein the temperature difference is in a range from 18° C. to 100° C.
22. The system of claim 13 , wherein the second thickness is uniform throughout the radially-projecting portion.
23. The system of claim 13 wherein the axially extending projections extend from the first component.