Light-emitting semiconductor chip and method for producing a semiconductor light-emitting chip
A light-emitting semiconductor chip ( 100 ) is provided, having a first semiconductor layer ( 1 ), which is at least part of an active layer provided for generating light and which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip ( 100 ).
1. A method for producing a light-emitting semiconductor chip, having a first semiconductor layer on a growth substrate, wherein the first semiconductor layer is at least part of an active layer provided for generating light and has a lateral variation of a material composition along at least one direction of extent, the method comprising,
growing the first semiconductor layer on the growth substrate on which an inhomogeneous lateral temperature distribution is created along the at least one direction of extent, such that the lateral variation of the material composition of the first semiconductor layer is produced,
wherein the inhomogeneous lateral temperature distribution is selectively created, at least partly, on the growth substrate, by a locally varying light irradiation, and wherein the locally varying light irradiation is controlled based on an output of at least one of a temperature measuring instrument or a measuring instrument for a wafer curvature measurement,
wherein a light power irradiated onto the growth substrate is locally adapted based on at least one of instantaneous curvature data based on the wafer curvature measurement, or a spatially resolved temperature measurement by the temperature measuring instrument, such that a temperature profile is homogenized during the growth process, and
wherein a modulation is selectively applied to the homogenized temperature profile, such that the lateral inhomogeneous temperature distribution is created on the growth substrate.
2. The method according to claim 1 , wherein the inhomogeneous lateral temperature distribution is selectively created, at least partly, on the growth substrate, by a temperature distribution structure, wherein the temperature distribution structure has at least one temperature distribution structure element and effects a local increase or reduction of a temperature of the growing first semiconductor layer.
3. The method according to claim 1 , wherein the first semiconductor layer is grown in a wafer composite.
4. The method according to claim 1 , wherein the growth substrate comprises markings in a form of adjustment or trigger markings.
5. The method according to claim 4 , wherein the markings are detected during the growth process, in the course of the locally varying light irradiation, and the temperature profile is adjusted based on the markings.
6. The method according to claim 1 , wherein the locally varying light irradiation comprises irradiation with a laser.
7. A method for producing a light-emitting semiconductor chip, having a first semiconductor layer on a growth substrate, wherein the first semiconductor layer is at least part of an active layer provided for generating light and has a lateral variation of a material composition along at least one direction of extent, the method comprising,
growing the first semiconductor layer on the growth substrate on which an inhomogeneous lateral temperature distribution is created along the at least one direction of extent, such that the lateral variation of the material composition of the first semiconductor layer is produced,
wherein the inhomogeneous lateral temperature distribution is selectively created, at least partly, on the growth substrate, by a locally varying light irradiation, and wherein the locally varying light irradiation is controlled based on an output of a measuring instrument for a wafer curvature measurement.
8. A method for producing a light-emitting semiconductor chip, having a first semiconductor layer on a growth substrate, wherein the first semiconductor layer is at least part of an active layer provided for generating light and has a lateral variation of a material composition along at least one direction of extent, the method comprising,
growing the first semiconductor layer on the growth substrate on which an inhomogeneous lateral temperature distribution is created along the at least one direction of extent, such that the lateral variation of the material composition of the first semiconductor layer is produced,
wherein the inhomogeneous lateral temperature distribution is selectively created, at least partly, on the growth substrate, by a locally varying light irradiation, and wherein the locally varying light irradiation is controlled based on an output of at least one of a temperature measuring instrument or a measuring instrument for a wafer curvature measurement,
wherein a light power irradiated onto the growth substrate is locally adapted based on at least one of instantaneous curvature data based on the wafer curvature measurement, or a spatially resolved temperature measurement by the temperature measuring instrument, such that a temperature profile is homogenized during the growth process,
wherein the growth substrate comprises markings in a form of adjustment or trigger markings, and
wherein the markings are detected during the growth process, in the course of the locally varying light irradiation, and the temperature profile is adjusted based on the markings.