IP Library › Granted Patent US 10,043,660

Granted Patent B2

US 10,043,660 · App. 15/596,417 · Granted Aug 7, 2018

Semiconductor device or display device including the same

Inventors: Shunpei Yamazaki (Setagaya, JP); Daisuke Kurosaki (Utsunomiya, JP); Yasutaka Nakazawa (Tochigi, JP); Kenichi Okazaki (Tochigi, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

H01L21/02266 H01L21/28211 H01L21/02142 H01L21/02164 H01L21/02601 H01L21/02631 H01L29/4232 H01L29/4908 H01L29/517 H01L29/786

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Quick Facts

Patent No.: US 10,043,660
App. No.: 15/596,417
Granted: Aug 7, 2018
Kind: B2

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Abstract

To provide a novel method for manufacturing a semiconductor device. To provide a method for manufacturing a highly reliable semiconductor device at relatively low temperature. The method includes a first step of forming a first oxide semiconductor film in a deposition chamber and a second step of forming a second oxide semiconductor film over the first oxide semiconductor film in the deposition chamber. Water vapor partial pressure in an atmosphere in the deposition chamber is lower than water vapor partial pressure in atmospheric air. The first oxide semiconductor film and the second oxide semiconductor film are formed such that the first oxide semiconductor film and the second oxide semiconductor film each have crystallinity. The second oxide semiconductor film is formed such that the crystallinity of the second oxide semiconductor film is higher than the crystallinity of the first oxide semiconductor film.

Claims (75)

1. A manufacturing method of a semiconductor device, comprising:

a first step of forming a first oxide semiconductor film in a deposition chamber; and

a second step of forming a second oxide semiconductor film over the first oxide semiconductor film in the deposition chamber,

wherein water vapor partial pressure in an atmosphere in the deposition chamber is lower than water vapor partial pressure in atmospheric air,

wherein the first oxide semiconductor film and the second oxide semiconductor film each have crystallinity, and

wherein the crystallinity of the second oxide semiconductor film is higher than the crystallinity of the first oxide semiconductor film.

2. The manufacturing method of a semiconductor device, according to claim 1 ,

wherein each of the first oxide semiconductor film and the second oxide semiconductor film is formed by a sputtering method.

3. The manufacturing method of a semiconductor device, according to claim 1 ,

wherein the second oxide semiconductor film is formed in an atmosphere in which oxygen partial pressure is higher than oxygen partial pressure in an atmosphere in which the first oxide semiconductor film is formed.

4. The manufacturing method of a semiconductor device, according to claim 1 ,

wherein the first oxide semiconductor film is formed with an oxygen flow rate ratio higher than or equal to 0% and lower than or equal to 30%, and

wherein the second oxide semiconductor film is formed with an oxygen flow rate ratio higher than 30% and lower than or equal to 100%.

5. The manufacturing method of a semiconductor device, according to claim 1 ,

wherein the first oxide semiconductor film includes a nanocrystal, and

wherein the second oxide semiconductor film includes a c-axis-aligned crystal.

6. The manufacturing method of a semiconductor device, according to claim 1 ,

wherein each of the first oxide semiconductor film and the second oxide semiconductor film is formed with an In—M—Zn oxide target, and

wherein the M is Ga, Al, Y, or Sn.

7. The manufacturing method of a semiconductor device, according to claim 6 ,

wherein an atomic ratio of the In to the M and the Zn is In:M:Zn=4:2:4.1 or a neighborhood of In:M:Zn=4:2:4.1.

8. The manufacturing method of a semiconductor device, according to claim 6 ,

wherein an atomic ratio of the In to the M and the Zn is In:M:Zn=5:1:7 or a neighborhood of In:M:Zn=5:1:7.

9. The manufacturing method of a semiconductor device, according to claim 6 ,

wherein an atomic ratio of the In to the M and the Zn is In:M:Zn=1:1:1.2 or a neighborhood of In:M:Zn=1:1:1.2.

10. A manufacturing method of a semiconductor device, comprising:

a first step of forming a first oxide semiconductor film in a deposition chamber; and

a second step of forming a second oxide semiconductor film over the first oxide semiconductor film in the deposition chamber,

wherein water vapor partial pressure in an atmosphere in the deposition chamber is lower than water vapor partial pressure in atmospheric air,

wherein the first oxide semiconductor film and the second oxide semiconductor film are each formed at a temperature that is not increased by intentional heating and the first oxide semiconductor film and the second oxide semiconductor film each have crystallinity, and

wherein the crystallinity of the second oxide semiconductor film is higher than the crystallinity of the first oxide semiconductor film.

11. The manufacturing method of a semiconductor device, according to claim 10 ,

wherein each of the first oxide semiconductor film and the second oxide semiconductor film is formed by a sputtering method.

12. The manufacturing method of a semiconductor device, according to claim 10 ,

13. The manufacturing method of a semiconductor device, according to claim 10 ,

wherein the first oxide semiconductor film is formed with an oxygen flow rate ratio higher than or equal to 0% and lower than or equal to 30%, and

wherein the second oxide semiconductor film is formed with an oxygen flow rate ratio higher than 30% and lower than or equal to 100%.

14. The manufacturing method of a semiconductor device, according to claim 10 ,

wherein the first oxide semiconductor film includes a nanocrystal, and

wherein the second oxide semiconductor film includes a c-axis-aligned crystal.

15. The manufacturing method of a semiconductor device, according to claim 10 ,

wherein each of the first oxide semiconductor film and the second oxide semiconductor film is formed with an In-M-Zn oxide target, and

wherein the M is Ga, Al, Y, or Sn.

16. The manufacturing method of a semiconductor device, according to claim 15 ,

wherein an atomic ratio of the In to the M and the Zn is In:M:Zn=4:2:4.1 or a neighborhood of In:M:Zn=4:2:4.1.

17. The manufacturing method of a semiconductor device, according to claim 15 ,

wherein an atomic ratio of the In to the M and the Zn is In:M:Zn=5:1:7 or a neighborhood of In:M:Zn=5:1:7.

18. The manufacturing method of a semiconductor device, according to claim 15 ,

wherein an atomic ratio of the In to the M and the Zn is In:M:Zn=1:1:1.2 or a neighborhood of In:M:Zn=1:1:1.2.

19. A manufacturing method of a semiconductor device, comprising:

a first step of forming a first oxide semiconductor film in a deposition chamber; and

a second step of forming a second oxide semiconductor film over the first oxide semiconductor film in the deposition chamber,

wherein water vapor partial pressure in an atmosphere in the deposition chamber is lower than water vapor partial pressure in atmospheric air,

wherein the first oxide semiconductor film and the second oxide semiconductor film are each formed at a temperature higher than or equal to 100° C. and lower than or equal to 200° C. and the first oxide semiconductor film and the second oxide semiconductor film each have crystallinity, and

wherein the crystallinity of the second oxide semiconductor film is higher than the crystallinity of the first oxide semiconductor film.

20. The manufacturing method of a semiconductor device, according to claim 19 ,

wherein each of the first oxide semiconductor film and the second oxide semiconductor film is formed by a sputtering method.

21. The manufacturing method of a semiconductor device, according to claim 19 ,

22. The manufacturing method of a semiconductor device, according to claim 19 ,

wherein the first oxide semiconductor film is formed with an oxygen flow rate ratio higher than or equal to 0% and lower than or equal to 30%, and

wherein the second oxide semiconductor film is formed with an oxygen flow rate ratio higher than 30% and lower than or equal to 100%.

23. The manufacturing method of a semiconductor device, according to claim 19 ,

wherein the first oxide semiconductor film includes a nanocrystal, and

wherein the second oxide semiconductor film includes a c-axis-aligned crystal.

24. The manufacturing method of a semiconductor device, according to claim 19 ,

wherein each of the first oxide semiconductor film and the second oxide semiconductor film is formed with an In—M—Zn oxide target, and

wherein the M is Ga, Al, Y, or Sn.

25. The manufacturing method of a semiconductor device, according to claim 24 ,

wherein an atomic ratio of the In to the M and the Zn is In:M:Zn=4:2:4.1 or a neighborhood of In:M:Zn=4:2:4.1.

26. The manufacturing method of a semiconductor device, according to claim 24 ,

wherein an atomic ratio of the In to the M and the Zn is In:M:Zn=5:1:7 or a neighborhood of In:M:Zn=5:1:7.

27. The manufacturing method of a semiconductor device, according to claim 24 ,

wherein an atomic ratio of the In to the M and the Zn is In:M:Zn=1:1:1.2 or a neighborhood of In:M:Zn=1:1:1.2.

Assignments (1)

ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 16, 2017

From: YAMAZAKI, SHUNPEI; KUROSAKI, DAISUKE; NAKAZAWA, YASUTAKA; OKAZAKI, KENICHI

To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Reel/Frame 042394/0408 →

Priority Claims (2)

JP 2016-101578 · May 20, 2016 · national

JP 2016-152985 · Aug 3, 2016 · national

Continuity (1)

Related Publication 20170338108A1 · Nov 23, 2017