Thermal contact for semiconductors and related methods
A semiconductor apparatus with improved heat removal and improved heat flow to a heat sink is provided. The semiconductor apparatus includes a p-type semiconductor. An n-p tunnel junction is positioned within an epitaxial structure of the p-type semiconductor. A metal contact layer is connected to the n-p tunnel junction through an alloyed n-type contact interface. The n-p tunnel junction improves heat flow from the semiconductor through an alloyed contact interface formed between the tunnel junction and the metal contact layer which has lower thermal and electrical resistance in comparison to a conventional metallurgically abrupt interface of a p-type contact.
1. A semiconductor apparatus comprising:
a p-type semiconductor;
a reversed-biased tunnel junction positioned within an epitaxial structure of the p-type semiconductor;
wherein the reversed-biased tunnel junction comprises:
a p+ layer;
a heavily doped n++ layer; and
a thin, very heavily doped p++ layer positioned between the p+ layer and the heavily doped n++ layer; and
wherein the epitaxial structure comprises:
an n-type guide layer;
a p-type guide layer in contact with the n-type guide layer;
an n-cladding layer formed in contact with the n-type layer; and
a p-cladding layer formed in contact with the p-type layer,
a metal contact layer connected to the reversed-biased tunnel junction through an alloyed n-type contact interface;
wherein the alloyed n-type contact interface is in direct contact with the heavily doped n++ layer of the reversed-biased tunnel junction;
wherein the p-cladding layer is in direct contact with the p+ layer of the reversed-biased tunnel junction; and
wherein a current injected into the semiconductor apparatus has a flow direction from the p+ layer, through the thin, very heavily doped p++ layer, through the heavily doped n++ layer, and into the metal contact layer, wherein a quantity of heat generated by the current is transferred from the p+ layer, through the thin, very heavily doped p++ layer, through the heavily doped n++ layer, and into the metal contact layer.
2. The semiconductor apparatus of claim 1 , wherein the thin, very heavily doped p++ layer has a lower bandgap than the p+ layer.
3. The semiconductor apparatus of claim 1 , wherein the alloyed n-type contact interface has a lower thermal and electrical resistance than a metallurgically abrupt interface of a p-type contact.
4. The semiconductor apparatus of claim 1 , further comprising at least one of: a spacer and a heat sink connected to the metal contact layer.
5. A laser diode apparatus comprising:
n-type and p-type waveguide layers having an active layer therebetween;
a reversed-biased tunnel junction formed on a p-side of the n-type and p-type waveguide layers, the reversed-biased tunnel junction comprising:
a p+ layer;
a heavily doped n++ layer; and
a thin, very heavily doped p++ layer positioned between the p+ layer and the heavily doped n++ layer;
a metal contact layer in contact with the reversed-biased tunnel junction, wherein an alloyed contact interface is formed between the reversed-biased tunnel junction and the metal contact layer, and
wherein the alloyed contact interface is in direct contact with the heavily doped n++ layer of the reversed-biased tunnel junction;
an n-cladding layer formed in contact with the n-type waveguide layer and a p-cladding layer formed between with the p-type waveguide layer and the reversed-biased tunnel junction,
wherein the p-cladding layer is in direct contact with the p+ layer of the reversed-biased tunnel junction; and
wherein a current injected into the laser diode apparatus has a flow direction from the p+ layer, through the thin, very heavily doped p++ layer, through the heavily doped n++ layer, and into the metal contact layer, wherein a quantity of heat generated by the current is transferred from the p+ layer, through the thin, very heavily doped p++ layer, through the heavily doped n++ layer, and into the metal contact layer.
6. The laser diode apparatus of claim 5 , wherein the thin, very heavily doped p++ layer has a lower bandgap than the p+ layer.
7. The laser diode apparatus of claim 5 , wherein the alloyed contact interface is an alloyed n-type contact interface.
8. The laser diode apparatus of claim 7 , wherein the alloyed n-type contact interface has a lower thermal and electrical resistance than a metallurgically abrupt interface of a p-type contact.
9. The laser diode apparatus of claim 5 , wherein, when an electrical current is injected in the n-type and p-type waveguide layers, the active layer provides optical gain by stimulated emission, wherein the injected electrical current is converted to coherent optical power.
10. The laser diode apparatus of claim 5 , further comprising at least one of: a spacer and a heat sink connected to the metal contact layer.
11. A method of heat removal from a high powered semiconductor device, the method comprising the steps of:
providing a p-type semiconductor having a reversed-biased tunnel junction positioned within an epitaxial structure of the p-type semiconductor;
wherein the reversed-biased tunnel junction comprises:
a p+ layer;
a heavily doped n++ layer; and
a thin, very heavily doped p++ layer positioned between the p+ layer and the heavily doped n++ layer; and
wherein the epitaxial structure comprises:
an n-type guide layer;
a p-type guide layer in contact with the n-type guide layer;
an n-cladding layer formed in contact with the n-type layer; and
a p-cladding layer formed in contact with the p-type layer,
injecting an electrical current through the p-type semiconductor, thereby generating heat within the p-type semiconductor, wherein the injected electrical current has a flow direction from the p+ layer, through the thin, very heavily doped p++ layer, through the heavily doped n++ layer, and into a metal contact layer; and
transferring at least a portion of the generated heat from the p-type semiconductor, through the reversed-biased tunnel junction, wherein the portion of the generated heat is transferred from the p+ layer, through the thin, very heavily doped p++ layer, through the heavily doped n++ layer, and into the metal contact layer formed on the reversed-biased tunnel junction, wherein an alloyed contact interface is formed between the reversed-biased tunnel junction and the metal contact layer, and wherein the alloyed n-type contact interface is in direct contact with the heavily doped n++ layer of the reversed-biased tunnel junction, and wherein the p-cladding layer is in direct contact with the p+ layer of the reversed-biased tunnel junction.
12. The method of claim 11 , further comprising conducting the heat transferred to the metal contact layer to at least one of: a spacer and a heat sink.