Micromachined bulk acoustic wave resonator pressure sensor
A pressure sensor includes a piezoelectric substrate having a generally planar structure and an anchor location fixing the piezoelectric substrate at the periphery of the planar structure of the piezoelectric substrate. The planar structure of the piezoelectric substrate has a first region having a first characteristic thickness adjacent to the anchor location, and a second region have a second characteristic thickness at a middle region of the substrate. The second characteristic thickness is less than the first characteristic thickness such that the planar structure in the second region is displaced relative to the neutral axis of the planar structure such that while undergoing bending the second region has either mostly compressive or mostly tensile stress.
1. A pressure sensor, comprising:
a piezoelectric substrate having a generally planar structure and a neutral axis, an upper electrode on the planar structure and a lower electrode on the planar structure to drive the resonance of the piezoelectric substrate and sense the frequency of the piezoelectric substrate;
an anchor location fixing the piezoelectric substrate to a fixture at the periphery of the planar structure of the piezoelectric substrate;
wherein the planar structure of the piezoelectric substrate has a first region having a first characteristic thickness adjacent to the anchor location, and a second region have a second characteristic thickness at a middle region of the substrate,
wherein the second characteristic thickness is less than the first characteristic thickness such that the planar structure in the second region is configured to be displaced relative to the neutral axis of the planar structure when pressure is directly applied to the piezoelectric substrate perpendicular to the neutral axis such that, while undergoing bending, the second region has either mostly compressive or mostly tensile stress, and
wherein the pressure range of the pressure applied to the piezoelectric substrate is between one atmosphere and 10 −6 Torr.
2. The sensor of claim 1 , wherein the sensor is fabricated using micromachining technology.
3. The sensor of claim 1 , wherein the substrate is an AT-cut quartz substrate.
4. The sensor of claim 1 , wherein the upper electrode comprises gold.
5. The sensor of claim 1 , wherein the lower electrode comprises gold.
6. The sensor of claim 1 , wherein the substrate is fixed to the fixture using silicone rubber cement.
7. The sensor of claim 1 , wherein the second region is formed by a dry etch process.
8. The sensor of claim 1 , wherein a diameter of the second region is equal to or less than 1 cm.
9. The sensor of claim 1 , wherein the second characteristic thickness of the second region is less than about 100 μm.
10. The sensor of claim 1 , wherein the sensed frequency is equal to or greater than 100 MHz.
11. The sensor of claim 1 , wherein the sensor is a MEMS device.
12. A bulk acoustic wave resonator pressure sensor including a diaphragm, the diaphragm comprising:
a substrate having a generally planar structure and a neutral axis, the planar structure including a first surface and a second surface opposite the first surface, a portion of the first surface being etched to a pre-selected depth;
a first electrode deposited and patterned on the first surface;
a second electrode deposited and patterned on the second surface;
wherein the first and second electrodes are configured to measure changes in an at-resonance impedance characteristic of the pressure sensor when pressure is directly applied to one of the first surface or the second surface perpendicular to the neutral axis, and
wherein the pressure range applied to the substrate is between one atmosphere and 10 −6 Torr.
13. The sensor of claim 12 , wherein the substrate is an AT-cut quartz substrate.
14. The sensor of claim 12 , wherein a thickness of an unetched portion of the substrate is about 100 μm.
15. The sensor of claim 12 , wherein the pre-selected etch depth is about 63 μm.
16. The sensor of claim 12 , wherein the pre-selected etch depth is about 80 μm.
17. The sensor of claim 12 , wherein the first and second electrodes comprise gold.
18. The sensor of claim 12 , wherein the first and second electrodes are deposited and patterned using a photolithographic process.
19. The sensor of claim 12 , wherein the sensor is fabricated using micromachining technology.
20. The sensor of claim 12 , wherein pressure applied to the first and second surfaces causes deflection and stress of the diaphragm, the deflection and stress being non-symmetric through a thickness of the diaphragm.
21. The sensor of claim 12 , wherein the diaphragm is mostly tensile for a net pressure applied to the second surface, and mostly compressive for a net pressure applied to the first surface.
22. The sensor of claim 12 , wherein the sensor is a MEMS device.