Acoustic wave device and manufacturing method for same
An acoustic wave device that utilizes a plate wave includes a recess in an upper surface of a support substrate. A piezoelectric substrate is located on the support substrate with a first principal surface side facing the support substrate. An IDT electrode is provided on the first principal surface of the piezoelectric substrate. The recess defines a cavity that is surrounded by the support substrate and the first principal surface of the piezoelectric substrate. The IDT electrode faces the cavity. The piezoelectric substrate includes through-holes that communicate the cavity and the second principal surface with each other. Sealing materials are filled respectively in the through-holes.
1. An acoustic wave device comprising:
a support substrate including a recess provided in an upper surface;
a piezoelectric substrate including a first principal surface and a second principal surface opposed to the first principal surface, the piezoelectric substrate being located on the support substrate with the first principal surface side facing the support substrate; and
an IDT electrode provided on the first principal surface; wherein
the recess defines a cavity that is surrounded by the support substrate and the first principal surface;
the IDT electrode faces the cavity;
the piezoelectric substrate includes at least one through-hole that communicates the cavity and the second principal surface with each other; and
a sealing material is filled in the at least one through-hole.
2. The acoustic wave device according to claim 1 , wherein the sealing material includes a metal material or a resin material.
3. The acoustic wave device according to claim 2 , wherein the metal material includes a material containing copper as a main component.
4. The acoustic wave device according to claim 2 , wherein the resin material includes a photosensitive resin.
5. The acoustic wave device according to claim 4 , wherein the photosensitive resin includes photosensitive polyimide.
6. The acoustic wave device according to claim 1 , further comprising a protective film that is disposed on the first principal surface of the piezoelectric substrate and covers the IDT electrode.
7. The acoustic wave device according to claim 6 , wherein the protective film includes at least one material selected from a group consisting of silicon oxide, a material containing silicon oxide as a main component, silicon nitride, a material containing silicon nitride as a main component, silicon oxynitride, and a material containing silicon oxynitride as a main component.
8. The acoustic wave device according to claim 1 further comprising a characteristics adjustment film that is disposed on the second principal surface of the piezoelectric substrate to adjust characteristics of the acoustic wave device.
9. The acoustic wave device according to claim 8 , wherein the characteristics adjustment film includes at least one material selected from a group consisting of silicon oxide, a material containing silicon oxide as a main component, silicon nitride, a material containing silicon nitride as a main component, silicon oxynitride, and a material containing silicon oxynitride as a main component.
10. The acoustic wave device according to claim 9 , wherein a main component of the characteristics adjustment film is the same as a main component of the protective film.
11. The acoustic wave device according to claim 10 , wherein a composition of the characteristics adjustment film is the same as a composition of the protective film.
12. The acoustic wave device according to claim 1 , wherein a portion of the sealing material extends to a bottom surface of the recess.
13. The acoustic wave device according to claim 1 , wherein a plurality of the at least one through-holes is provided and a portions of the sealing material extend through the plurality of the at least one through-holes to couple with each other on a bottom surface of the recess.