Resin-encapsulated semiconductor device
A first resin encapsulated body and a second resin encapsulated body are stacked to form a resin-encapsulated semiconductor device. The first resin encapsulated body includes: a first semiconductor element; an external terminal; inner wiring; and a first resin for covering those components, at least a rear surface of the external terminal, a rear surface of the semiconductor element, and a surface of the inner wiring are exposed from the first resin. The second resin encapsulated body includes: a second semiconductor element having an electrode pad formed on a surface thereof; a second resin for covering the second semiconductor element; and a metal body connected to the electrode pad, and is partly exposed from the second resin. The inner wiring and the metal body are electrically connected to each other.
1. A resin-encapsulated semiconductor device, comprising:
a first resin-encapsulated body; and
a second resin-encapsulated body,
the first resin-encapsulated body comprising:
a first semiconductor element;
an external terminal spaced around the first semiconductor element;
inner wiring connecting the first semiconductor element and a surface of the external terminal to each other;
a first resin covering the first semiconductor element, the external terminal, and the inner wiring,
wherein a rear surface of the external terminal and a surface of the inner wiring are exposed from the first resin, and a rear surface of the first semiconductor element is covered by the first resin,
the second resin-encapsulated body comprising:
a second semiconductor element;
a second resin covering the second semiconductor element; and
a metal body connected to the second semiconductor element, and partly exposed from the second resin,
wherein a surface of the first resin-encapsulated body on which the inner wiring is exposed and a surface of the second resin-encapsulated body on which the metal body is exposed are formed so as to be in intimate contact with each other, and the inner wiring and the metal body are electrically connected to each other.
2. A resin-encapsulated semiconductor device according to claim 1 , wherein the metal body comprises a bump electrode and the second semiconductor element is a flip-chip connected to the inner wiring.
3. A resin-encapsulated semiconductor device according to claim 1 , wherein the metal body comprises a metal wire and the second semiconductor element is connected to the inner wiring by wire bonding.
4. A resin-encapsulated semiconductor device according to claim 1 , wherein the composition of the first resin and the composition of the second resin are different from each other.
5. A resin-encapsulated semiconductor device according to claim 1 , wherein the first semiconductor element forming the first resin-encapsulated body comprises a plurality of first semiconductor elements.
6. A resin-encapsulated semiconductor device according to claim 1 , wherein the second semiconductor element forming the second resin-encapsulated body comprises a plurality of second semiconductor elements.
7. A resin-encapsulated semiconductor device, comprising:
a first resin-encapsulated body; and
a second resin-encapsulated body,
the first resin-encapsulated body comprising:
a first semiconductor element whose face is disposed downward,
inner wiring spaced around the first semiconductor element;
a bonding wire connecting the first semiconductor element and the inner wiring;
an external terminal integrally coupled to a rear surface of the inner wiring; and
a first resin covering the first semiconductor element, the bonding wire, the external terminal, and the inner wiring,
wherein a rear surface of the external terminal and a surface of the inner wiring are exposed from the first resin, and the face of the first semiconductor element is covered by the first resin,
the second resin-encapsulated body comprising:
a second semiconductor element;
a second resin covering the second semiconductor element; and
a metal body connected to the second semiconductor element, and partly exposed from the second resin,
wherein a surface of the first resin-encapsulated body on which the inner wiring is exposed and a surface of the second resin-encapsulated body on which the metal body is exposed are formed so as to be in intimate contact with each other, and the inner wiring and the metal body are electrically connected to each other.
8. A resin-encapsulated semiconductor device according to claim 7 , wherein the metal body comprises a bump electrode and the second semiconductor element is a flip-chip connected to the inner wiring by wire bonding.
9. A resin-encapsulated semiconductor device according to claim 7 , wherein the metal body comprises a metal wire and the second semiconductor element is connected to the inner wiring by wire bonding.
10. A resin-encapsulated semiconductor device according to claim 7 , wherein the composition of the first resin and the composition of the second resin are different from each other.
11. A resin-encapsulated semiconductor device according to claim 7 , wherein the first semiconductor element forming the first resin-encapsulated body comprises a plurality of first semiconductor elements.
12. A resin-encapsulated semiconductor device according to claim 7 , wherein the second semiconductor element forming the second resin-encapsulated body comprises a plurality of second semiconductor elements.