Semiconductor detector
The present disclosure provides a semiconductor detector. The semiconductor detector comprises: a detector crystal including a crystal body, an anode and a cathode; a field enhance electrode for applying a voltage to the detector crystal; an insulating material disposed between the field enhanced electrode and a surface of the detector crystal. The semiconductor detector further comprises a field enhanced electrode circuit board having a bottom connection layer in contact with the surface of the detector crystal and a top layer opposite to the bottom connection layer, wherein the top layer is connected to a high voltage input terminal of the semiconductor detector, and an insulating material is provided between the bottom connection layer and the detector surface of the detector crystal.
1. A semiconductor detector comprising:
a detector crystal including a crystal body, an anode and a cathode;
a field enhance electrode for applying a voltage to the detector crystal;
an insulating material disposed between the field enhanced electrode and a surface of the detector crystal.
2. The semiconductor detector according to claim 1 , wherein the insulating material covers an entire surface of the detector crystal at the side of the field enhanced electrode.
3. The semiconductor detector according to claim 1 , wherein the detector crystal is a tellurium zinc cadmium crystal.
4. The semiconductor detector according to claim 1 , further comprising a field enhanced electrode circuit board having a bottom connection layer in contact with the surface of the detector crystal and a top layer opposite to the bottom connection layer, wherein the top layer is connected to a high voltage input terminal of the semiconductor detector, and an insulating material is provided between the bottom connection layer and the detector surface of the detector crystal.
5. The semiconductor detector according to claim 4 , wherein the field enhanced electrode circuit board further comprises a plurality of via holes, and the top layer is connected to the bottom connection layer through the via holes.
6. The semiconductor detector according to claim 4 , wherein the top layer is connected to an external high voltage source by soldering a patch socket or by a direct soldering.
7. The semiconductor detector according to claim 4 , wherein a filter circuit is provided in the top layer of the field enhanced electrode circuit board.
8. The semiconductor detector according to claim 7 , wherein the filter circuit utilizes a passive filtering.
9. The semiconductor detector according to claim 7 , wherein the filter circuit is provided at an edge of the top layer of the field enhanced electrode circuit board.
10. The semiconductor detector according to claim 4 , wherein the field enhanced electrode circuit board is a flexible circuit board.
11. The semiconductor detector according to claim 10 , wherein the filter circuit is provided in the flexible circuit board.
12. The semiconductor detector according to claim 4 , wherein a voltage dividing circuit is further provided in the top layer, and the voltage dividing circuit supplies power to the field enhanced electrode circuit board together with an independent power source.