Integrated gate driver
A method is presented for forming a semiconductor device. The method may include forming a first gate structure on a first portion of a semiconductor material located on a surface of an insulating substrate, the first gate structure including a first sacrificial layer and a second sacrificial layer and forming a second gate structure on a second portion of the semiconductor material located on the surface of the insulating substrate, the second gate structure including a third sacrificial layer. The method further includes etching the first and second dielectric sacrificial layers to create a first contact region within the first gate structure and etching the third dielectric sacrificial layer to create a second contact region within the second gate structure. The method further includes forming silicide in at least the first and second contact regions of the first and second gate structures, respectively.
1. A semiconductor device, comprising:
a semiconductor material located on a surface of an insulating substrate;
a first gate structure formed on a portion of the semiconductor material, the first gate structure including a first sacrificial layer and a hydrogenated amorphous silicon layer; and
a second gate structure formed on a portion of the semiconductor material, the second gate structure including an intrinsic layer, a doped layer, and a second sacrificial layer, the intrinsic layer directly contacting the second portion of the semiconductor material;
wherein the first and second sacrificial layers of the first and second gate structures are etched to create first and second contact regions within the first and second gate structures, respectively, for receiving silicide.
2. The semiconductor device of claim 1 , wherein the first gate structure is a depletion-mode metal oxide semiconductor field effect transistor (MOSFET) and the second gate structure is a heterojunction field effect transistor (HJFET).
3. The semiconductor device of claim 1 , wherein the semiconductor material located on the surface of the insulating substrate is a LTPS (low-temperature poly-silicon) material.
4. The semiconductor device of claim 1 , wherein the first and second sacrificial layers are dielectric layers.
5. The semiconductor device of claim 1 , wherein the doped layer of the second gate structure has a dopant type opposite a dopant type of the second portion of the semiconductor material.
6. The semiconductor device of claim 5 , wherein hydrogenated silicon is grown before etching of the first sacrificial layer of the first gate structure and the second sacrificial layer of the second gate structure.
7. The semiconductor device of claim 6 , wherein, after etching, hydrogenated silicon remains adjacent the first and second gate structures.
8. The semiconductor device of claim 7 , wherein the hydrogenated silicon has a second dopant type, the second dopant type being opposite the first dopant type of the second gate structure.
9. The semiconductor device of claim 1 , wherein the first gate structure is formed between a first set of spacers and the second gate structure is formed between a second set of spacers.
10. The semiconductor device of claim 9 , wherein the first and second set of spacers extend beyond a top surface of the first and second gate structures, respectively.
11. A semiconductor device, comprising:
a first gate structure formed on a first portion of a semiconductor material located on a surface of an insulating substrate, the first gate structure including a first sacrificial layer and a first metal layer;
a second gate structure formed on a second portion of the semiconductor material located on the surface of the insulating substrate, the second gate structure including an intrinsic layer, a doped hydrogenated silicon layer, and a second sacrificial layer, the intrinsic layer directly contacting the second portion of the semiconductor material;
wherein the first and second sacrificial layers of the first and second gate structures are etched to create first and second contact regions within the first and second gate structures, respectively, for receiving silicide.
12. The semiconductor device of claim 11 , wherein the first gate structure is a depletion-mode MOSFET and the second gate structure is a HJFET.
13. The semiconductor device of claim 11 , wherein the semiconductor material located on the surface of the insulating substrate is a LTPS (low-temperature poly-silicon) material.
14. The semiconductor device of claim 11 , wherein the doped layer of the second gate structure has a dopant type opposite a dopant type of the second portion of the semiconductor material.
15. The semiconductor device of claim 14 , wherein hydrogenated silicon is grown before etching of the first and second sacrificial layers of the first and second gate structures, respectively.
16. The semiconductor device of claim 15 , wherein, after etching, hydrogenated silicon remains adjacent the first and second gate structures.
17. The semiconductor device of claim 16 , wherein the hydrogenated silicon has a second dopant type, the second dopant type being opposite the first dopant type of the second gate structure.
18. The semiconductor device of claim 11 , wherein hydrogenated silicon is grown and a metal layer is placed over the hydrogenated silicon, the hydrogenated silicon and metal layer extending over the semiconductor material and onto a portion of the first and second gate structures.
19. The semiconductor device of claim 11 , wherein the first gate structure is formed between a first set of spacers and the second gate structure is formed between a second set of spacers.
20. The semiconductor device of claim 19 , wherein the first and second set of spacers extend beyond a top surface of the first and second gate structures, respectively.