Electrostatic discharge (ESD) protection for a high side driver circuit
Electrostatic discharge (ESD) protection is provided by a circuit including a resistor having a first terminal and a second terminal, a zener diode having a cathode terminal directly connected to said first terminal and an anode terminal directly connected to a third terminal, and a clamp diode having a cathode terminal directly connected to said second terminal and an anode terminal directly connected to said third terminal.
1. A circuit, comprising:
a power MOSFET device having a gate terminal, a source terminal and a drain terminal;
a sense MOSFET device having a gate terminal, a source terminal and drain terminal;
a resistor having a first terminal coupled to the gate terminal of the power MOSFET device and a second terminal coupled to the gate terminal of the sense MOSFET device;
a zener diode having an anode terminal coupled to the source terminal of the sense MOSFET device and a cathode terminal coupled to the gate terminal of the sense MOSFET device; and
a clamp diode having an anode terminal coupled to the source terminal of the sense MOSFET device and a cathode terminal coupled to the gate terminal of the power MOSFET device;
wherein a breakdown voltage of the zener diode is less than a clamping voltage of the clamp diode.
2. The circuit of claim 1 , wherein the drain terminals of the power MOSFET device and sense MOSFET device are coupled to a power supply node.
3. The circuit of claim 1 , wherein the source terminal of the power MOSFET device is coupled to an integrated circuit pad.
4. The circuit of claim 1 , wherein the resistor comprises a resistance of a metal line between the gate terminal of the power MOSFET device and the gate terminal of the sense MOSFET device.
5. The circuit of claim 1 , further comprising a drive circuit outputting a drive signal applied to the gate terminal of the power MOSFET device.
6. A circuit, comprising:
a power MOSFET device having a gate terminal, a source terminal and a drain terminal;
a sense MOSFET device having a gate terminal, a source terminal and drain terminal;
a resistor having a first terminal directly connected to the gate terminal of the power MOSFET device and a second terminal directly connected to the gate terminal of the sense MOSFET device;
a zener diode having an anode terminal directly connected to the source terminal of the sense MOSFET device and a cathode terminal directly connected to the gate terminal of the sense MOSFET device; and
a clamp diode having an anode terminal directly connected to the source terminal of the sense MOSFET device and a cathode terminal directly connected to the gate terminal of the power MOSFET device.
7. The circuit of claim 6 , wherein the drain terminals of the power MOSFET device and sense MOSFET device are directly connected to a power supply node.
8. The circuit of claim 6 , wherein the source terminal of the power MOSFET device is directly connected to an integrated circuit pad.
9. The circuit of claim 6 , wherein the resistor comprises a resistance of a metal line between the gate terminal of the power MOSFET device and the gate terminal of the sense MOSFET device.
10. The circuit of claim 6 , wherein a breakdown voltage of the zener diode is less than a clamping voltage of the clamp diode.
11. The circuit of claim 6 , wherein a turn on time of the zener diode is less than a turn on time of the clamp diode.
12. The circuit of claim 6 , further comprising a drive circuit outputting a drive signal applied to the gate terminal of the power MOSFET device.
13. The circuit of claim 6 , further comprising:
a further resistor having a first terminal directly connected to the gate terminal of the power MOSFET device and a second terminal directly connected to the gate terminal of the sense MOSFET device;
a further zener diode having an anode terminal directly connected to the source terminal of the sense MOSFET device and a cathode terminal directly connected to the gate terminal of the sense MOSFET device; and
a further clamp diode having an anode terminal directly connected to the source terminal of the sense MOSFET device and a cathode terminal directly connected to the gate terminal of the power MOSFET device.
14. A circuit, comprising:
a resistor having a first terminal and a second terminal;
a zener diode having a cathode terminal directly connected to said first terminal and an anode terminal directly connected to a third terminal; and
a clamp diode having a cathode terminal directly connected to said second terminal and an anode terminal directly connected to said third terminal;
wherein a breakdown voltage of the zener diode is less than a clamping voltage of the clamp diode.
15. The circuit of claim 14 , wherein the resistor comprises a resistance of a metal line between the first and second terminals.
16. A circuit, comprising:
a power MOSFET device having a gate terminal, a source terminal and a drain terminal;
a sense MOSFET device having a gate terminal, a source terminal and drain terminal;
a resistor having a first terminal coupled to the gate terminal of the power MOSFET device and a second terminal coupled to the gate terminal of the sense MOSFET device;
a zener diode having an anode terminal coupled to the source terminal of the sense MOSFET device and a cathode terminal coupled to the gate terminal of the sense MOSFET device; and
a clamp diode having an anode terminal coupled to the source terminal of the sense MOSFET device and a cathode terminal coupled to the gate terminal of the power MOSFET device;
wherein a turn on time of the zener diode is less than a turn on time of the clamp diode.
17. The circuit of claim 16 , wherein the drain terminals of the power MOSFET device and sense MOSFET device are coupled to a power supply node.
18. The circuit of claim 16 , wherein the source terminal of the power MOSFET device is coupled to an integrated circuit pad.
19. The circuit of claim 16 , wherein the resistor comprises a resistance of a metal line between the gate terminal of the power MOSFET device and the gate terminal of the sense MOSFET device.
20. The circuit of claim 16 , further comprising a drive circuit outputting a drive signal applied to the gate terminal of the power MOSFET device.
21. A circuit, comprising:
a power MOSFET device having a gate terminal, a source terminal and a drain terminal;
a sense MOSFET device having a gate terminal, a source terminal and drain terminal;
a resistor having a first terminal coupled to the gate terminal of the power MOSFET device and a second terminal coupled to the gate terminal of the sense MOSFET device;
a zener diode having an anode terminal coupled to the source terminal of the sense MOSFET device and a cathode terminal coupled to the gate terminal of the sense MOSFET device;
a clamp diode having an anode terminal coupled to the source terminal of the sense MOSFET device and a cathode terminal coupled to the gate terminal of the power MOSFET device;
a further resistor having a first terminal coupled to the gate terminal of the power MOSFET device and a second terminal coupled to the gate terminal of the sense MOSFET device;
a further zener diode having an anode terminal coupled to the source terminal of the sense MOSFET device and a cathode terminal coupled to the gate terminal of the sense MOSFET device; and
a further clamp diode having an anode terminal coupled to the source terminal of the sense MOSFET device and a cathode terminal coupled to the gate terminal of the power MOSFET device.
22. The circuit of claim 21 , wherein the drain terminals of the power MOSFET device and sense MOSFET device are coupled to a power supply node.
23. The circuit of claim 21 , wherein the source terminal of the power MOSFET device is coupled to an integrated circuit pad.
24. The circuit of claim 21 , wherein the resistor comprises a resistance of a metal line between the gate terminal of the power MOSFET device and the gate terminal of the sense MOSFET device.
25. The circuit of claim 21 , wherein a breakdown voltage of the zener diode is less than a clamping voltage of the clamp diode.
26. The circuit of claim 21 , wherein a turn on time of the zener diode is less than a turn on time of the clamp diode.
27. The circuit of claim 21 , further comprising a drive circuit outputting a drive signal applied to the gate terminal of the power MO SFET device.
28. A circuit, comprising:
a resistor having a first terminal and a second terminal;
a zener diode having a cathode terminal directly connected to said first terminal and an anode terminal directly connected to a third terminal; and
a clamp diode having a cathode terminal directly connected to said second terminal and an anode terminal directly connected to said third terminal;
wherein a turn on time of the zener diode is less than a turn on time of the clamp diode.
29. The circuit of claim 28 , wherein the resistor comprises a resistance of a metal line between the first and second terminals.
30. A circuit, comprising:
a resistor having a first terminal and a second terminal;
a zener diode having a cathode terminal directly connected to said first terminal and an anode terminal directly connected to a third terminal;
a clamp diode having a cathode terminal directly connected to said second terminal and an anode terminal directly connected to said third terminal;
a further resistor having a fourth terminal directly connected to said first terminal and a fifth terminal directly connected to said second terminal;
a further zener diode having a cathode terminal directly connected to said first terminal and an anode terminal directly connected to the third terminal; and
a further clamp diode having a cathode terminal directly connected to said second terminal and an anode terminal directly connected to the third terminal.
31. The circuit of claim 30 , wherein the resistor comprises a resistance of a metal line between the first and second terminals.