Semiconductor treatment composition and treatment method
A semiconductor treatment composition includes potassium, sodium, and a compound A represented by the formula (1), and has a potassium content M K (ppm) and a sodium content M Na (ppm) that satisfy M K /M Na =1×10 −1 to 1×10 4 .
1. A treatment method, comprising:
treating a wiring board that contains tungsten as a wiring material by using a concentrated semiconductor treatment composition, after subjecting the wiring board to chemical mechanical polishing by using a composition comprising iron ions and peroxides,
wherein the concentrated semiconductor treatment composition comprises:
potassium;
sodium;
a water-soluble polymer having a weight average molecular weight of 1,000 to 1,500,000; and
a compound A represented by the following general formula (1),
wherein the concentrated semiconductor treatment composition has a potassium content M K (ppm) and a sodium content M Na (ppm) that satisfy M K /M Na =1×10 −1 to 1×10 4 :
wherein each of R 1 to R 4 is a hydrogen atom or an organic group, independently, and M − is an anion.
2. The treatment method according to claim 1 , wherein the concentrated semiconductor treatment composition is used in a 20 to 500-fold diluted state.
3. The treatment method according to claim 1 , wherein the concentrated semiconductor treatment composition has a viscosity of less than 5 mPa·s at 25° C.
4. The treatment method according to claim 1 , wherein the concentrated semiconductor treatment composition further comprises an amino acid.
5. The treatment method according to claim 1 , wherein the water-soluble polymer in the concentrated semiconductor treatment composition has a weight average molecular weight of 3,000 to 1,200,000.
6. The treatment method according to claim 1 , wherein the potassium content M K (ppm) is 1×10 −4 to 5×10 3 ppm, and the sodium content M Na (ppm) is 1×10 −6 to 1×10 2 ppm.
7. A treatment method, comprising:
treating a wiring board that contains tungsten as a wiring material by using a semiconductor treatment composition, after subjecting the wiring board to chemical mechanical polishing by using a composition comprising iron ions and peroxides,
wherein the semiconductor treatment composition comprises:
potassium;
sodium;
a water-soluble polymer having a weight average molecular weight of 1,000 to 1,500,000; and
a compound A represented by the following general formula (1),
wherein the semiconductor treatment composition is suitable for being used without being diluted, and
the semiconductor treatment composition has a potassium content M K (ppm) and a sodium content M Na (ppm) that satisfy M K /M Na =1×10 −1 to 1×10 4 :
wherein each of R 1 to R 4 is a hydrogen atom or an organic group, independently, and M − is an anion.
8. The treatment method according to claim 7 , wherein the semiconductor treatment composition has a viscosity of less than 5 mPa·s at 25° C.
9. The treatment method according to claim 7 , wherein the semiconductor treatment composition further comprises an amino acid.
10. The treatment method according to claim 7 , wherein the water-soluble polymer in the semiconductor treatment composition has a weight average molecular weight of 3,000 to 1,200,000.
11. The treatment method according to claim 7 , wherein the potassium content M K (ppm) is 1×10 −6 to 5×10 3 ppm, and the sodium content M Na (ppm) is 1×10 −8 to 1×10 2 ppm.