Transducer to convert optical energy to electrical energy

1. An optical transducer system comprising:

a light source configured to generate light having associated thereto a predetermined photon energy that is a function of the light frequency or is inversely proportional to the light wavelength and that is greater than 1 ev; and

a transducer configured to receive the light generated by the light source and to convert optical energy to electrical energy, the transducer having a plurality of semiconductor layers electrically connected to each other in series, each semiconductor layer having substantially a same composition that has associated thereto a substantially same bandgap energy, the bandgap energy being greater than the predetermined photon energy.

2. The system of claim 1 wherein the light source is further configured to illuminate the transducer at an intensity comprised in the range of 100 W/cm 2 to 2000 W/cm 2 .

3. The system of claim 1 wherein the composition is selected to have a difference in energy between the bandgap energy and the predetermined photon energy substantially equal to a phonon energy of the semiconductor material.

4. The system of claim 3 wherein the phonon energy includes at least one of a longitudinal acoustic phonon energy, a transverse acoustic phonon energy and a longitudinal optical phonon energy.

5. The system of claim 1 wherein the composition is selected to have difference in energy between the bandgap energy and the predetermined photon energy greater than 0 meV and less than 100 meV.

6. The system of claim 1 wherein the semiconductor layers are GaAs layers with a bandgap energy of substantially 1.43 eV when at a temperature of 300 K.

7. The system of claim 6 wherein the light source is one of a diode light source and a laser light source and has a photon energy comprised in the range of 1.25 eV to 1.37 eV.

8. The system of claim 1 wherein the light source is a pulsed light source.

9. The system of claim 1 wherein:

the plurality of semiconductors layers have:

a semiconductor emitter layer, the semiconductor emitter layer being one of n-doped and p-doped; and

semiconductor base layers, the semiconductor base layers being p-doped when the semiconductor emitter layer is n-doped, the semiconductor base layers being n-doped when the semiconductor emitter layer is p-doped, one of the semiconductor base layers adjoining the semiconductor emitter layer to form a p-n junction having associated thereto a first electric potential;

the transducer further has at least one connecting element formed between adjacent semiconductor base layers to electrically connect the adjacent semiconductor base layers to each other, each connecting element being configured to generate a respective additional electric potential between the adjacent semiconductor base layers;

the transducer has associated thereto an overall electric potential that is equal to the sum of the first electric potential and of each respective additional electric potential, each respective additional electric potential being substantially equal to the first electric potential;

and,

the transducer is to receive light from the light source, the light to propagate through, and be partially absorbed in, the semiconductor emitter layer and then sequentially propagates through, and be partially absorbed in, each of the semiconductor base layers.

10. The system of claim 9 wherein each semiconductor base layer has a respective thickness configured to absorb a same number of photons.

11. The system of claim 1 wherein:

the light source includes an optical fiber having a delivery end to deliver light to the transducer, the system further comprising a connector to which the delivery end is to be secured, the connector configured to align the delivery end and the transducer when the delivery end is secured to the connecting assembly.

12. The system of claim 11 wherein the delivery end includes a ferrule and the connector is free of any insert in which to insert the ferrule.

13. An optical transducer system comprising:

a light source configured to generate light having associated thereto a predetermined photon energy; and

a transducer configured to receive the light generated by the light source and to convert optical energy to electrical energy, the transducer having a plurality of semiconductor layers electrically connected to each other in series, each semiconductor layer having substantially a same composition that has associated thereto a substantially same bandgap energy, the bandgap energy being greater than the predetermined photon energy, wherein the composition is selected to have a difference in energy between the bandgap energy and the predetermined photon energy substantially equal to at least one of a donor energy and an acceptor energy.

14. A method of converting optical energy to electrical energy, the method comprising:

providing a transducer having a plurality of semiconductor layers electrically connected to each other in series, each semiconductor layer having substantially a same composition that has associated thereto a substantially same bandgap energy; and

illuminating the transducer with light having associated thereto a photon energy that is a function of the light frequency or is inversely proportional to the light wavelength and that is greater than 1 ev, the photon energy being less than the bandgap energy.

15. The method of claim 14 wherein illuminating the transducer includes illuminating the transducer with an optical power density ranging between 100 W/cm 2 to 2000 W/cm 2 .

16. The method of claim 14 wherein providing the transducer includes selecting a transducer whose bandgap energy is greater than the photon energy by an amount substantially equal to a phonon energy of a semiconductor material forming each semiconductor layer.

17. The method of claim 14 wherein providing the transducer includes selecting a transducer whose bandgap energy is greater than the photon energy by an amount substantially equal to at least one of an acceptor level energy and a donor level energy of impurities in a semiconductor material forming each semiconductor layer.

18. The method of claim 14 wherein providing the transducer includes selecting a transducer whose bandgap energy is greater than the photon energy by an amount greater than 0 meV and less than 100 meV.

19. The method of claim 14 wherein providing the transducer includes selecting a transducer that has GaAs semiconductor layers and that has a bandgap energy of substantially 1.43 eV when at a temperature of 300 K.

20. The method of claim 14 wherein illuminating the transducer includes providing one of a diode light source and a laser light source, the light source having a photon energy comprised in the range of 1.25 eV to 1.37 eV.