Method of manufacturing semiconductor device
Described is a technique for uniformly doping a silicon substrate having a Fin structure with a dopant. A method of manufacturing a semiconductor device may includes: (a) forming a dopant-containing film containing a dopant on a silicon film by performing a cycle a predetermined number of times, the cycle including: (a-1) forming a first dopant-containing film by supplying a first dopant-containing gas containing the dopant and a first ligand to a substrate having thereon the silicon film and one of a silicon oxide film and a silicon nitride film; and (a-2) forming a second dopant-containing film by supplying a second dopant-containing gas containing the dopant and a second ligand different from and reactive with the first ligand to the substrate; and (b) forming a doped silicon film by annealing the substrate having the dopant-containing film thereon to diffuse the dopant into the silicon film.
1. A method of manufacturing a semiconductor device, comprising:
(a) forming a dopant-containing film containing a dopant on a silicon film by performing a process a predetermined number of times, the process comprising: (a-1) forming a first dopant-containing film by supplying a first dopant-containing gas containing the dopant and a first ligand to a substrate having thereon the silicon film and one of a silicon oxide film and a silicon nitride film; and (a-2) forming a second dopant-containing film by supplying a second dopant-containing gas containing the dopant and a second ligand different from and reactive with the first ligand to the substrate, wherein the first dopant-containing gas comprises boron and the second dopant-containing gas comprises boron; and
(b) forming a doped silicon film by annealing the substrate having the dopant-containing film thereon to diffuse the dopant into the silicon film,
wherein (a-1) and (a-2) are performed simultaneously in a manner that (a-1) is performed while (a-2) is performed.
2. The method of claim 1 , wherein the second ligand comprises one of a halogen element and hydrogen, and the first ligand reacts with the second ligand to generate a hydrogen halide.
3. The method of claim 1 , wherein the dopant-containing film comprises a crystalline boron film.
4. The method of claim 1 , wherein the first dopant-containing gas and the second dopant-containing gas comprise BCl 3 and B 2 H 6 , respectively, or the first dopant-containing gas and the second dopant-containing gas comprise B 2 H 6 , and BCl 3 , respectively.
5. The method of claim 3 , wherein the first dopant-containing gas comprises BCl 3 .
6. The method of claim 3 , wherein the first dopant-containing gas comprises B 2 H 6 .
7. The method of claim 1 , wherein the substrate having the dopant-containing film thereon is annealed under nitrogen atmosphere in (b).
8. The method of claim 1 , wherein the process further comprises: (a-3) removing the first dopant-containing gas after performing (a-1); and (a-4) removing the second dopant-containing gas after performing (a-2).