Backside illumination image sensor and image-capturing device
A backside illumination image sensor that includes a semiconductor substrate with a plurality of photoelectric conversion elements and a read circuit formed on a front surface side of the semiconductor substrate, and captures an image by outputting, via the read circuit, electrical signals generated as incident light having reached a back surface side of the semiconductor substrate is received at the photoelectric conversion elements includes: a light shielding film formed on a side where incident light enters the photoelectric conversion elements, with an opening formed therein in correspondence to each photoelectric conversion element; and an on-chip lens formed at a position set apart from the light shielding film by a predetermined distance in correspondence to each photoelectric conversion element. The light shielding film and an exit pupil plane of the image forming optical system achieve a conjugate relation to each other with regard to the on-chip lens.
1. An image sensor, comprising:
a first photoelectric conversion element that light with a first angle of incident from a first direction enters;
a second photoelectric conversion element that light with a second angle of incident from the first direction enters, the second angle being different from the first angle;
circuits via which signals output from the first photoelectric conversion element and the second photoelectric conversion element, the circuits being disposed on a side opposite to a side where the light enters the first photoelectric conversion element and the light enters the second photoelectric conversion element, in the first direction.
2. The image sensor according to claim 1 , wherein:
on-chip lenses are respectively disposed on the side where the light enters the first photoelectric conversion element and the side the light enters the second photoelectric conversion element, in the first direction.
3. The image sensor according to claim 1 , further comprising:
a separating area that is constituted with a semiconductor separating the first photoelectric conversion element and the second photoelectric conversion element.
4. The image sensor according to claim 2 , further comprising:
a separating area that is constituted with a semiconductor separating the first photoelectric conversion element and the second photoelectric conversion element.
5. An image sensor, comprising:
a first photoelectric conversion element that light from a first direction enters;
a second photoelectric conversion element that light from the first direction enters;
a first light shield that is disposed on a surface where the light enters the first photoelectric conversion element;
a second light shield that is disposed on a surface where the light enters the second photoelectric conversion element: and
circuits via which signals output from the first photoelectric conversion element and the second photoelectric conversion element, the circuits being disposed on a side opposite to a side where the light enters the first photoelectric conversion element and the light enters the second photoelectric conversion element, in the first direction,
wherein:
a relative position between the first photoelectric conversion element and the first light shield and a relative position between the second photoelectric conversion element and the second light shield are different from each other.
6. The image sensor according to claim 5 , wherein:
on-chip lenses are respectively disposed on the side where the light enters the first photoelectric conversion element and the side the light enters the second photoelectric conversion element, in the first direction.
7. The image sensor according to claim 5 , further comprising:
a separating area that is constituted with a semiconductor separating the first photoelectric conversion element and the second photoelectric conversion element.
8. The image sensor according to claim 6 , further comprising:
a separating area that is constituted with a semiconductor separating the first photoelectric conversion element and the second photoelectric conversion element.
9. An image sensor, comprising:
a first photoelectric conversion element that light from a first direction enters;
a second photoelectric conversion element that light from the first direction enters;
a first on-chip lens formed on a side where the light enters the first photoelectric conversion element;
a second on-chip lens formed on a side where the light enters the second photoelectric conversion element;
a first light shielding film formed between the first on-chip lens and the first photoelectric conversion element, with a first opening formed therein; and
a second light shielding film formed between the second on-chip lens and the second photoelectric conversion element, with a second opening formed therein, wherein:
a relative position of the first opening to the first photoelectric conversion element and a relative position of the second opening to the second photoelectric conversion element are different in a second direction intersecting with the first direction;
a distance in the first direction from a lens surface of the first on-chip lens to the first light shielding film is longer than a distance in the first direction from the first light shielding film to the first photoelectric conversion element; and
a distance in the first direction from a lens surface of the second on-chip lens to the second light shielding film is longer than a distance in the first direction from the second light shielding film to the second photoelectric conversion element.
10. The image sensor according to claim 9 , further comprising:
a separating area that is constituted with a semiconductor separating the first photoelectric conversion element and the second photoelectric conversion element.