Three-terminal metastable symmetric zero-volt battery memristive device
A method of fabricating a memristive structure for symmetric modulation between resistance states is presented. The method includes forming a first electrode and a second electrode over an insulating substrate, forming an anode contacting the first and second electrodes, forming an ionic conductor over the anode, forming a cathode of the same material as the anode over the ionic conductor, forming a third electrode over the cathode, and enabling bidirectional transport of ions between the anode and cathode resulting in a resistance adjustment of the memristive structure, the anode and the cathode being formed from metastable mixed conducting materials with ion concentration dependent conductivity.
1. A memristive structure for providing symmetric modulation between resistance states, the structure comprising:
a first electrode and a second electrode each directly contacting an insulating substrate therein;
an anode contacting the first and second electrodes;
an ionic conductor formed over the anode;
a cathode formed over the ionic conductor; and
a third electrode formed over the cathode;
wherein the anode and the cathode are formed from metastable materials enabling bidirectional transport of ions between the anode and cathode resulting in a resistance adjustment of the memristive structure.
2. The structure of claim 1 , wherein the resistance adjustment involves resistance switching for maintaining the symmetric modulation between the resistance states.
3. The structure of claim 1 , wherein the first, second, and third electrodes are formed from inert metals.
4. The structure of claim 1 , wherein the metastable materials are metastable phase separated mixed ionic-electronic conductors (MIEC) whose conductivity is dependent on a concentration of an intercalated mobile ion.
5. The structure of claim 1 , wherein electrical pulses are applied between the first electrode and the third electrode or between the second electrode and the third electrode to enable a write operation.
6. The structure of claim 1 , wherein electrical pulses are applied between the first and second electrodes to enable a read operation.
7. The structure of claim 1 , wherein a movement of the ions is enabled by application of a voltage to enable concurrent operation of read and write operations.
8. The structure of claim 1 , wherein a total chemical potential of all the ions in the structure is maintained near zero.
9. A memristive structure for providing symmetric modulation between resistance states, the structure comprising:
an ionic conducting layer formed between a metastable anode and a metastable cathode; and
a first electrode and at least one other electrode directly contacting the metastable anode and cathode, respectively;
wherein bidirectional transport of ions between the metastable anode and cathode results in resistance switching for maintaining the symmetric modulation between the resistance states.
10. The structure of claim 9 , wherein the electrodes are formed from inert metals and the metastable anode and cathode are metastable phase separated mixed ionic-electronic conductors (MIEC) whose conductivity is dependent on a concentration of an intercalated mobile ion.
11. The structure of claim 9 , wherein electrical pulses are applied between the electrodes to enable a write operation and a read operation.
12. The structure of claim 9 , wherein a total chemical potential of all the ions in the structure is maintained near zero.