Semiconductor device and method for fabricating the same
View Patent ↗A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region; forming a shallow trench isolation (STI) around the first fin-shaped structure; forming a first oxide layer on the first fin-shaped structure; and then forming a second oxide layer on the first oxide layer and the STI.
1. A method for fabricating semiconductor device, comprising:
providing a substrate having a first region and a second region;
forming a first fin-shaped structure on the first region;
forming a shallow trench isolation (STI) around the first fin-shaped structure;
after forming the STI performing an in-situ steam generation (ISSG) process to form a first oxide layer on the first fin-shaped structure so that the first oxide layer covers a top surface and sidewalls of the first fin-shaped structure without extending to a top surface of the STI; and
forming a second oxide layer on and directly contacting the first oxide layer and the STI.
2. The method of claim 1 , further comprising:
forming a second fin-shaped structure on the second region;
forming the STI around the second fin-shaped structure;
forming the first oxide layer on the first fin-shaped structure and the second fin-shaped structure; and
forming the second oxide layer on the first oxide layer on the second region.
3. The method of claim 2 , further comprising:
forming a patterned mask on the first region;
removing the second oxide layer and the first oxide layer on the second region; and
forming a third oxide layer on the second fin-shaped structure.
4. The method of claim 1 , further comprising performing an atomic layer deposition (ALD) process to form the second oxide layer.
5. The method of claim 1 , wherein a thickness of the first oxide layer is less than a thickness of the second oxide layer.
6. The method of claim 1 , further comprising:
forming a first liner on the first fin-shaped structure;
forming a second liner on the first liner; and
forming a dielectric layer on the second liner.
7. The method of claim 6 , wherein the first liner and the second liner comprise same material.
8. The method of claim 6 , wherein the first liner and the second liner comprise silicon oxide.
9. The method of claim 6 , further comprising performing an in-situ steam generation (ISSG) process to form the first liner.
10. The method of claim 6 , further comprising performing an atomic layer deposition (ALD) process to form the second liner.
11. The method of claim 6 , wherein the thicknesses of the first liner and the second liner are equivalent.
12. The method of claim 6 , wherein a thickness of the first liner is greater than a thickness of the first oxide layer.