Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
There is provided a method of manufacturing a semiconductor device, which includes: forming a first seed layer containing silicon and germanium on a substrate by performing, a predetermined number of times, a cycle which includes supplying a first process gas containing silicon or germanium and containing a halogen element to the substrate, supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing germanium and not containing a halogen element to the substrate; and forming a germanium-containing film on the first seed layer by supplying a fourth process gas containing germanium and not containing a halogen element to the substrate.
1. A method of manufacturing a semiconductor device, comprising:
forming a first seed layer containing silicon and germanium on a substrate by performing, a predetermined number of times, a first cycle which includes supplying a first process gas containing silicon or germanium and containing a halogen element to the substrate, supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing germanium and not containing a halogen element to the substrate; and
forming a germanium-containing film on the first seed layer by supplying a fourth process gas containing germanium and not containing a halogen element to the substrate.
2. The method of claim 1 , wherein the first cycle includes performing the act of supplying the first process gas, the act of supplying the second process gas and the act of supplying the third process gas in this order.
3. The method of claim 1 , wherein the first cycle includes performing the act of supplying the first process gas, the act of supplying the third process gas and the act of supplying the second process gas in this order.
4. The method of claim 1 , wherein the first cycle includes alternately performing the act of supplying the first process gas and an act of simultaneously performing the act of supplying the second process gas and the act of supplying the third process gas.
5. The method of claim 1 , further comprising:
forming a second seed layer containing silicon on the substrate by performing, a predetermined number of times, a second cycle which includes the act of supplying the first process gas and the act of supplying the second process gas, wherein the act of forming the second seed layer and the act of forming the first seed layer are performed before performing the act of forming the germanium-containing film.
6. The method of claim 5 , wherein the second cycle includes alternately performing the act of supplying the first process gas and the act of supplying the second process gas.
7. The method of claim 1 , further comprising:
forming a third seed layer containing germanium on the first seed layer by performing, a predetermined number of times, a third cycle which includes the act of supplying the first process gas and the act of supplying the third process gas, wherein the act of forming the third seed layer is performed after performing the act of forming the first seed layer and before performing the act of forming the germanium-containing film.
8. The method of claim 7 , wherein the third cycle includes alternately performing the act of supplying the first process gas and the act of supplying the third process gas.
9. The method of claim 5 , wherein before performing the act of forming the germanium-containing film, alternately repeating the act of forming the second seed layer and the act of forming the first seed layer is performed,
in a former-half period of an execution period of the act of alternately repeating, a number of execution times of the second cycle is made larger than a number of execution times of the first cycle, and
in a latter-half period of the execution period of the act of alternately repeating, the number of execution times of the first cycle is made larger than the number of execution times of the second cycle.
10. The method of claim 1 , further comprising:
forming a first cap layer containing silicon and germanium on the germanium-containing film by performing, a predetermined number of times, a fourth cycle which includes the act of supplying the first process gas, the act of supplying the second process gas and the act of supplying the third process gas.
11. The method of claim 10 , further comprising:
forming a second cap layer containing silicon on the first cap layer by performing, a predetermined number of times, a fifth cycle which includes the act of supplying the first process gas and the act of supplying the second process gas.
12. The method of claim 11 , wherein after performing the act of forming the germanium-containing film, alternately repeating the act of forming the first cap layer and the act of forming the second cap layer is performed,
in a former-half period of an execution period of the act of alternately repeating, a number of execution times of the fourth cycle is made larger than a number of execution times of the fifth cycle, and
in a latter-half period of an execution period of the act of alternately repeating, the number of execution times of the fifth cycle is made larger than the number of execution times of the fourth cycle.
13. The method of claim 1 , wherein the fourth process gas has the same molecular structure as the third process gas.