IP Library Granted Patent US 10,692,635
Granted Patent B2
US 10,692,635 · App. 15/622,785 · Granted Jun 23, 2020

Iron nitride permanent magnet and technique for forming iron nitride permanent magnet

Inventors: Jian-Ping Wang (Shoreview, MN); Yanfeng Jiang (Minneapolis, MN)
Assignee: REGENTS OF THE UNIVERSITY OF MINNESOTA
H01F1/10B22D11/001B22D11/0622B22F7/08C22C29/16C22C38/001C23C8/26C23C8/80C23C14/48H01F1/055H01F1/086H01F1/147H01F1/34H01F41/0253C22C2202/02H01F1/0579
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Quick Facts
Patent No.
US 10,692,635
App. No.
15/622,785
Granted
Jun 23, 2020
Kind
B2
Abstract

A bulk permanent magnetic material may include between about 5 volume percent and about 40 volume percent Fe 16 N 2 phase domains, a plurality of nonmagnetic atoms or molecules forming domain wall pinning sites, and a balance soft magnetic material, wherein at least some of the soft magnetic material is magnetically coupled to the Fe 16 N 2 phase domains via exchange spring coupling. In some examples, a bulk permanent magnetic material may be formed by implanting N+ ions in an iron workpiece using ion implantation to form an iron nitride workpiece, pre-annealing the iron nitride workpiece to attach the iron nitride workpiece to a substrate, and post-annealing the iron nitride workpiece to form Fe 16 N 2 phase domains within the iron nitride workpiece.

Claims (30)

1. A bulk permanent magnetic material comprising:

Fe 16 N 2 phase domains, wherein the Fe 16 N 2 phase domains form hard magnetic domains;

a plurality of nonmagnetic atoms or molecules forming domain wall pinning sites; and

soft magnetic material comprising Fe 8 N, wherein at least some of the soft magnetic material is magnetically coupled to the hard magnetic Fe 16 N 2 phase domains.

2. The bulk permanent magnetic material of claim 1 , further comprising:

dopant elements to form domain wall pinning sites within the magnetic material.

3. The bulk permanent magnetic material of claim 2 , wherein the dopant elements comprises at least one of cobalt (Co), titanium (Ti), copper (Cu) and zinc (Zn).

4. The bulk permanent magnetic material of claim 1 , wherein crystallographic textures of the Fe 16 N 2 and the Fe 8 N are coherent.

5. The bulk permanent magnetic material of claim 1 , wherein the Fe 16 N 2 phase domains are chemically ordered.

6. The bulk permanent magnetic material of claim 5 , wherein the Fe 8 N comprises α′ phase Fe 8 N, wherein the Fe 8 N is a chemically disordered counterpart of the chemically-ordered Fe 16 N 2 phase domains.

7. A method of producing the bulk permanent magnetic material according to claim 1 , comprising

positioning an iron workpiece on a surface of a substrate;

carrying out ion implantation to implant N+ ions in an iron workpiece; and

subsequently performing two annealing processes, pre-annealing and post-annealing,

wherein the pre-annealing is carried out to attach the iron nitride workpiece to the substrate; and

wherein the post-annealing is carried out at a temperature lower than a pre-annealing temperature.

8. The method of claim 7 , further comprising:

facilitating transformation of a crystalline structure of at least some of crystals in the iron workpiece from body centered cubic (bcc) iron to body centered tetragonal (bct) iron nitride during the post-annealing; and

forming Fe 16 N 2 and Fe 8 N phases.

9. The method of claim 7 , wherein the pre-annealing is carried out at a temperature in a range of from 450° C. to 550° C.

10. The method of claim 7 , further comprising:

applying an external force between about 0.2 gigapascals (GPa) and about 10 GPa between the iron workpiece and the substrate during the pre-annealing.

11. The method of claim 7 , wherein an atmosphere in which the pre-annealing step is performed comprises at least one of nitrogen, argon, and hydrogen.

12. The method of claim 7 , wherein the temperature for the post-annealing is below 250° C.

13. The method of claim 8 , further comprising:

combining multiple workpieces of the Fe 16 N 2 +Fe 8 N, and

pressing the combined multiple workpieces together to form the bulk permanent magnetic material.

14. The method of claim 13 , further comprising:

introducing magnetically soft or nonmagnetic dopant materials.

15. The method of claim 7 , wherein the substrate comprises at least one of silicon and gallium arsenide (GaAs).

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 12, 2020
From: JIANG, YANFENG; WANG, JIAN PING
To: REGENTS OF THE UNIVERSITY OF MINNESOTA
Reel/Frame 052635/0648 →
Continuity (3)
Continuation 14766101
Provisional Application 61762147 · Feb 7, 2013
Related Publication 20170330660A1 · Nov 16, 2017
Cited By (2)
US 12,412,686 US 12,533,749