Granted Patent B2

US 10,381,535 · App. 15/623,664 · Granted Aug 13, 2019

Abstract

Claims (35)

1. A method of forming an SST device, comprising:

providing a plurality of SST dies, wherein each of the SST dies comprises—

a transducer structure having a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials, wherein the first and second semiconductor materials and the active region form a p-n junction,

a first contact electrically coupled to the first semiconductor material, and

a second contact extending along at least a portion of a backside of the first contact, wherein the second contact is a buried contact that projects through an opening in the first contact to the second semiconductor material, and

wherein the transducer structure forms a boundary between a first region and a second region, and wherein the first contact is in the first region;

positioning a carrier substrate in the first region; and

electrically coupling the plurality of SST dies together in series between a first terminal and a second terminal, wherein the plurality of SST dies includes adjacent first and second SST dies coupled together in series, wherein the transducer structures of the first and second SST dies are separated from each by an opening, wherein the second contact of the first SST die and the first contact of the second SST die both extend into the opening and are coupled together within the opening, and wherein the first and second terminals are configured to receive an output voltage from a power supply.

2. The method of claim 1 wherein forming the plurality of SST dies comprises:

electrically isolating portions of the transducer structure from one another to demarcate the individual SST dies,

wherein electrically coupling the plurality of SST dies in series comprises electrically coupling the first contact of one of the plurality of SST dies to the second contact of an adjacent SST die in the plurality of SST dies.

3. The method of claim 1 wherein forming the plurality of SST dies comprises:

electrically isolating portions of the transducer structure from one another to demarcate the individual SST dies; and

forming the second contacts such that they extend from the first contact of one of the plurality of SST dies to the second semiconductor material of another adjacent SST die.

4. The method of claim 1 , further comprising forming the transducer structure of the plurality of SST dies to include P-type gallium nitride (P-type GaN) facing toward the first region, N-type gallium nitride (N-type GaN) facing toward the second region, and indium gallium nitride (InGaN) between the P-type GaN and the N-type GaN.

5. The method of claim 1 wherein:

positioning the carrier substrate in the first region comprises attaching a conductive carrier to the SST dies; and wherein

the method further comprises—

electrically isolating the first and second contacts from the conductive carrier substrate; and

electrically coupling the second terminal to the conductive carrier substrate.

6. The method of claim 1 wherein:

positioning the carrier substrate in the first region comprises attaching a generally nonconductive carrier substrate to the SST dies; and wherein

the method further comprises forming at least one of the first and second terminals in the first region.

7. The method of claim 1 wherein forming the plurality of SST dies comprises forming SST dies configured to emit electromagnetic radiation in at least one of the ultraviolet spectrum, the visible spectrum, and the infrared spectrum.

8. A method of forming an SST device, comprising:

forming a plurality of SST dies, wherein forming individual SST dies of the plurality of SST dies comprises—

providing a transducer structure having a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials, wherein the first and second semiconductor materials and the active region form a p-n junction, and wherein the transducer structure has a first side that defines an internal boundary of a first region of the SST die and a second side opposite that the first side that defines an internal boundary of a second region of the SST die, the first region being proximate to the first semiconductor material and the second region being proximate to the second semiconductor material;

forming a first contact in the first region to electrically couple the first contact to the first semiconductor material; and

forming at least one via through a backside of the first contact, wherein the at least one via extends through the first semiconductor material, the active region, and to the second semiconductor material;

forming a second contact along a portion of the backside of the first contact and into the at least one via to form a buried contact;

positioning the carrier substrate in the first region; and

electrically coupling the plurality of SST dies together in series between a first terminal and a second terminal, wherein the transducer structures of adjacent SST dies are separated from each by an opening, wherein the second contact of a first of plurality of SST dies and the first contact of a second of the plurality of SST dies both extend into the opening and are coupled together within the opening, and wherein the first and second terminals are configured to receive an output voltage from a power supply.

9. The method of claim 8 wherein forming individual SST dies further comprises:

before forming the second contact, forming a dielectric material adjacent to the backside of the first contact and along a portion of the at least one via extending along the first semiconductor material and the active region; and

disposing an electrically conductive material on the dielectric material and in the at least one via to form the second contact.

Assignments (7)